JPS56133834A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56133834A
JPS56133834A JP3629480A JP3629480A JPS56133834A JP S56133834 A JPS56133834 A JP S56133834A JP 3629480 A JP3629480 A JP 3629480A JP 3629480 A JP3629480 A JP 3629480A JP S56133834 A JPS56133834 A JP S56133834A
Authority
JP
Japan
Prior art keywords
etchants
etching
soaked
insulating film
status
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3629480A
Other languages
Japanese (ja)
Inventor
Akira Kawakatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP3629480A priority Critical patent/JPS56133834A/en
Publication of JPS56133834A publication Critical patent/JPS56133834A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To detect the etching status of an insulating film by using etchants soaked with the insulating film and resist film but will not be soaked with a semiconductor substrate wherein the soaked status of the etchants is visually observed. CONSTITUTION:A photoresist 3 is provided on a semiconductor substrate 1 having an insulating film 2 for patterning to consist the photoresist 3 as a mask. And in etching the insulating film 2 by etchants (an aqueous solution of hydrofluoric acid group) soaked with the insulating film 2 and resist film 3 but will not be soaked with the semiconductor substrate 1, etching status (When the etching has been completed, the etchants will not exist at an opening 6) is detected by visually observing the leakage status of the etchants 4 after pulling the substrate 1 out of the etchants. In this way, the completion of etching can visually by confirmed. Therefore, an etching process will be simplified.
JP3629480A 1980-03-24 1980-03-24 Manufacture of semiconductor device Pending JPS56133834A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3629480A JPS56133834A (en) 1980-03-24 1980-03-24 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3629480A JPS56133834A (en) 1980-03-24 1980-03-24 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56133834A true JPS56133834A (en) 1981-10-20

Family

ID=12465781

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3629480A Pending JPS56133834A (en) 1980-03-24 1980-03-24 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56133834A (en)

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