JPS56133632A - Manufacture of infrared-ray detector - Google Patents

Manufacture of infrared-ray detector

Info

Publication number
JPS56133632A
JPS56133632A JP3804380A JP3804380A JPS56133632A JP S56133632 A JPS56133632 A JP S56133632A JP 3804380 A JP3804380 A JP 3804380A JP 3804380 A JP3804380 A JP 3804380A JP S56133632 A JPS56133632 A JP S56133632A
Authority
JP
Japan
Prior art keywords
electrodes
crystal wafer
photodetection
pyroelectric
pyroelectric crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3804380A
Other languages
Japanese (ja)
Inventor
Sadao Matsumura
Katsuyoshi Fukuda
Hitoshi Hirano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3804380A priority Critical patent/JPS56133632A/en
Priority to CA000360797A priority patent/CA1175130A/en
Priority to US06/190,161 priority patent/US4383174A/en
Priority to DE3035933A priority patent/DE3035933C2/en
Priority to GB8030792A priority patent/GB2061616B/en
Publication of JPS56133632A publication Critical patent/JPS56133632A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
    • H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Radiation Pyrometers (AREA)

Abstract

PURPOSE:To obtain a device having desired characteristic with excellent mass- producibility by forming photodetection electrodes by applying an polishing conductive paste after forming a reverse surface electrode on a pyroelectric crystal wafer, and further by cutting the pyroelectric crystal wafer. CONSTITUTION:On the reverse surface of pyroelectric crystal wafer 11, reverse- surface electrode 12 is provided and conductive thick-film paste 14 is further applied. Next, pyroelectric crystal wafer 11 is polished into a thin plate to form photodetection electrodes 15. Next, bonding electrodes 16 are formed at edge parts of photodetection electrodes 15. Then, pyroelectric crystal wafer 11 is cut into pyroelectric material chips so that while conductive thick-film paste 14 is separated, photodetection electrodes 15 will be separated individually. Next, a pyroelectric material chip is fixed on mount base 18 and bonding electrode 16 and lead body 20 are connected together via lead wire 22.
JP3804380A 1979-09-25 1980-03-25 Manufacture of infrared-ray detector Pending JPS56133632A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP3804380A JPS56133632A (en) 1980-03-25 1980-03-25 Manufacture of infrared-ray detector
CA000360797A CA1175130A (en) 1979-09-25 1980-09-23 Pyroelectric detector and method for manufacturing same
US06/190,161 US4383174A (en) 1979-09-25 1980-09-23 Pyroelectric detector and method for manufacturing the same
DE3035933A DE3035933C2 (en) 1979-09-25 1980-09-24 Pyroelectric detector and method for manufacturing such a detector
GB8030792A GB2061616B (en) 1979-09-25 1980-09-24 Pyroelectric detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3804380A JPS56133632A (en) 1980-03-25 1980-03-25 Manufacture of infrared-ray detector

Publications (1)

Publication Number Publication Date
JPS56133632A true JPS56133632A (en) 1981-10-19

Family

ID=12514497

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3804380A Pending JPS56133632A (en) 1979-09-25 1980-03-25 Manufacture of infrared-ray detector

Country Status (1)

Country Link
JP (1) JPS56133632A (en)

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