CA1175130A - Pyroelectric detector and method for manufacturing same - Google Patents
Pyroelectric detector and method for manufacturing sameInfo
- Publication number
- CA1175130A CA1175130A CA000360797A CA360797A CA1175130A CA 1175130 A CA1175130 A CA 1175130A CA 000360797 A CA000360797 A CA 000360797A CA 360797 A CA360797 A CA 360797A CA 1175130 A CA1175130 A CA 1175130A
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- CA
- Canada
- Prior art keywords
- pyroelectric
- substrate
- face
- wafer
- shield electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 239000000463 material Substances 0.000 claims abstract description 53
- 238000000227 grinding Methods 0.000 claims abstract description 8
- 239000004020 conductor Substances 0.000 claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 3
- 239000013078 crystal Substances 0.000 claims description 23
- 239000003292 glue Substances 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 229910012463 LiTaO3 Inorganic materials 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910005540 GaP Inorganic materials 0.000 claims description 2
- 238000010297 mechanical methods and process Methods 0.000 claims description 2
- 230000005226 mechanical processes and functions Effects 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000002305 electric material Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 238000010420 art technique Methods 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- XKUKSGPZAADMRA-UHFFFAOYSA-N glycyl-glycyl-glycine Natural products NCC(=O)NCC(=O)NCC(O)=O XKUKSGPZAADMRA-UHFFFAOYSA-N 0.000 description 1
- 108010067216 glycyl-glycyl-glycine Proteins 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 1
- 239000006187 pill Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910021653 sulphate ion Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
- H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Abstract
PYROELECTRIC DETECTOR AND METHOD
FOR MANUFACTURING THE SAME
ABSTRACT
A device for detecting infrared rays using the pyroelectric effect, namely a pyroelectric detector, and methods for manufacturing the pyroelectric detector, are disclosed The pyroelectric detector comprises a pyroelectric material, an electrode for receiving infrared rays placed on one face of the pyroelectric material, a shield electrode placed at the other face of the pyroelectric material, a substrate made of a semiconductor or conductive material which is fastened to the shield electrode, the substrate having a hole corresponding in position to the position of the infrared receiving electrode and a stand to which the substrate is fastened. The method for manufacturing the pyroelectric detector comprises the steps of forming a shield electrode at one face of a pyroelectric wafer, making holes in a substrate, fastening the substrate to the shield electrode, grinding the other of the wafer, forming electrodes on the other face of the wafer for receiving infrared rays, the position of the electrodes corresponding to the position of the holes, and dicing the pyroelectric material between the holes to form a single pyroelectric detector.
FOR MANUFACTURING THE SAME
ABSTRACT
A device for detecting infrared rays using the pyroelectric effect, namely a pyroelectric detector, and methods for manufacturing the pyroelectric detector, are disclosed The pyroelectric detector comprises a pyroelectric material, an electrode for receiving infrared rays placed on one face of the pyroelectric material, a shield electrode placed at the other face of the pyroelectric material, a substrate made of a semiconductor or conductive material which is fastened to the shield electrode, the substrate having a hole corresponding in position to the position of the infrared receiving electrode and a stand to which the substrate is fastened. The method for manufacturing the pyroelectric detector comprises the steps of forming a shield electrode at one face of a pyroelectric wafer, making holes in a substrate, fastening the substrate to the shield electrode, grinding the other of the wafer, forming electrodes on the other face of the wafer for receiving infrared rays, the position of the electrodes corresponding to the position of the holes, and dicing the pyroelectric material between the holes to form a single pyroelectric detector.
Description
~7~
PYROELECTRIC DETECTOR AN~ METHOD
FOR MANUP'~CTURING T~E SAME
BACKGROUND OF THE INVENTION
This invention relates to a device for detecting infra-red rays utilizing the pyro~lectric effect and methods for manufacturing the same.
Generally, pyroelectric materials are use in pyroelec-tric detectors for detecting infrared rays by utilizing the pyroelectric effect. However, if the heat capacity of the pyroelectric material is great, the pyroelectric material can-not respond to a fast change in the energy of infrared rays.
10 Therefore, various techniques are used in the prior art to reduce the heat capacity of pyroelectric materials. For example, by reducing the thickness of the pyroelectric material to about 30-50 ,um, heat capacity is reduced.
Since it now will be necessary to refer to the drawings 15 appended hereto, they will first be described briefly.
BRIEF DESCRIPTION OF THE DRAWINGS
The exact nature of this invention, as well as other objects and advantages thereof, will be readily apparent from conside-ration of the following specification and drawings.
Figure 1 shows a longitudinal sectional view of one prior art embodiment of a pyroelectric detector.
A~" ~ i7 ~
~2--Figure 2 shows a longitudinal sectional view of another prior art embodimen-t of a pyroelectric detector.
Figure 3 shows a longitudinal sectional view of a third prior art embodiment of a pyroelectric detector.
Figure 4A shows a longitudinal sectional view of one embodiment of the pyroelectric detector of the present invention.
Figure 4B shows a perspective view, partly in section, of the pyroelec-tric detector shown in Fiyure 4~.
Figure 5 shows a wiring diagram Eor the pyroelectric detector.
Figure 6 illustrates a sequence of steps in accor-dance with one method of making the pyroelectric detector.
Figure 7 illustrates a sequence of steps in accor-dance with another method of making the invention.
Figure 8 illustrates a sequence of steps in accor-dance with a further embodiment of the method of the invention.
In the prior art, heat capacity also is reduced by exposing the pyroelectric material to air and mounting the pyroelectric material on a heat insulated substrate. A
technique for exposing the pyroelectri~ material to air is shown in Fig. 1. A piezoelectric crystal 3 is mounted on a stand 5 by the wires 4 and 5. The electrode 1 for receiving infrared rays and the shield electrode 2 are formed on different sides of the piezoelectric crystal 3. Although heat capacity is reduced, the pyroelectric detector shown in Figure 1 is not reliable or durable; it also is very difficult to manufacture and treat the pyroelectric detector because the pyroelectric crystal 3 is so thin.
Another prior art technique is shown in Figure 2.
The shield electrode 2, which is formed on one side of piezoelectric crystal 3, is connected to the heat insula- ~
ted substrate 6 which is in turn mounted on the stand 5.
The pyroelectric detector shown in Fig. 2 has the dis-advatantage that it is difficult to connect wire 4 to the shield electrode 2.
t, ~7~
Another known structure is shown in Fig. 3. This structure is described in Japanese patent publication No.
12272/1976 ~Tokkosho~. The shield electrode 2, which is mounted on one side of piezoelect:ric crystal 3, is formed around a heat insulated substrate 6 and mounted on stand 5 by conductive glue. The heat insulated substrate 6 is covered by an SnO~ film 7 so it is unnecessary to connect the shield electrode 2 to stand 5 by wire 4. However, because the piezoelectric crystal 3 is mounted on the sub-strate 6, the heat capaci-ty is great which prevents the detector from responding to fast changes in the energy of infrared rays. It also is difficult to manufacture and treat the detector shown in Figure 3 because it is neces-sary to mount a very thin pyroelectric crystal.
SUMMARY OF THE INVENTION
.
It is an object of an aspect of this invention to provide a pyroelectric detector which can respond to fast changes in the energy of infrared rays. It is an object of an aspect of this invention to provide a pyroelectric detector:having a strong structure, high durability and high reliability.
It is an ob]ect of an aspect of this invention to provide an improved method for manufacturing pyroelectric detectors using thin pyroelectric material. An object of an aspect of this invention is to provide a method which can be readily used for mass production of pyroelectric detectors.
According to an aspect of this invention, certain of these objects are attained by providing an improved pyroelectric detector. This pyroelectric detector com prises a pyroelectric material, an infrared receiving electrode mounted on one face of the pyroelectric material for receiving infrared rays, a shield electrode mounted on the other face of the pyroelectric material, a ` ' .
-3a-a substrate made of a semiconductive or concluctive ma-terial having a hole hroader than the inErared receiv:ing elec-trode, the substrate being connected to the shield electrode by conductive glue, and a stand to which the substrate is con-nected by conductive glue.
Also, according to an aspect of this invention, certain of these objects are attained by providing various methods of manufacturing pyroelectric detec-toxs. A shield electrode is formed on one face oE a wafer of pyroelectric material and holes are made in a substrate of semiconduc-tive or conductive material which is glued to the shield electrode by conductive glue. The other face of the wafer of pyroelectric material is ground and infrared receiving electrodes are formed thereon for receiving infrared rays Each infrared receiving electxode, which has an area sub-stantially less than the area of each hole in the substrate, is positioned over one of the holes. The wafer of pyro-electric material than is diced at positions between the holes.
Various apsects of the invention are as follows:
A pyroelectric detector comprising:
a pyroelectric materiali an infrared receiving electrode mounted on one face of said pyroelectric material for receiving infrared rays;
a shield electrode placed at the other face of said pyroelectric material;
a substrate made of semiconductive or conductive material fastened to said shield electrode by conductive glue, said substrate having an enclosed aperture substantially broad-er than said infrared receiving electrode; and a stand to which said substrate is fastened by conduc-tive glue.
A method of manufacturing pyroelectric detectors com-prising the steps of:
forming a shield elec-trode on one face of a wafer of pyroelectric mat:erial;
r;,S.r -3b-fastening a substrate made of semiconductive material to said shleld electrode by conductive glue;
grinding the other face of said wafer of pyroelectric material;
makiny enclosed apertures in said substrate;
forming infrared receiving electrodes for receiving infrared rays on the other face of said wafer of pyroelectric material, each of said receiving electrodes having an area substantially less than the area of a corresponding one of said enclosed apertures, each of said infrared receiving elec~rodes being positioned over one of said enclosed aper-tures on said other face of said shield electrode; and dicing said pyroelectric material at positions between said enclosed apertures.
A method of manufacturing pyroelectric detectors comprising the steps of:
forming a shield electrode on one face of a wafer of pyroelectric material;
making enclosed apertures through a substrate made of semiconductor or conductive material;
fastening said substrate to said shield electrode by conductive glue;
grinding the other face of said wafer of pyro-electric material;
forming infrared receiving electrodes for receiving infrared rays on the other face of said wafer of pyroelec-tric material, each of said infrared receiving electrodes having an area substantially less than the area of each of said enclosed apertures, each of said infrarad receiving electrodes being positioned over one of said enclosed apertures on said other face; and dicing said pyroelectric material at positions between said enclosed apertures.
,, .
.
3c-A method of manufacturing pyroelectric detectors comprising the steps of:
forming a shield electrode on one face of a wafer of pyroelectric material;
forming a conductive thick-film paste on said shield electrode, said thick-film paste having enclosed apertures therein;
grinding the other face oi- said wafer of pyroelec-tric material;
forming infrared receiving electrodes for receiving infrared rays on the other face of each pyroelectric material, each of said i.nfrared receiving electrodes having an area substantially less than the area of each said enclosed apertures, each of said infrared receiving electrodes being positioned over one of said enclosed apertures on said other face; and dicing said pyroelectric material at positions between the enclosed apertures.
DESCRIPTION OF THE PREFERRED EMBODIMENT
Figure 4A shows a cross-sectional view of the prefer-red embodiment of the pyroelectric detector of the invention.
The crystal .
: , .
3'~
Il is n waîcr of pyroelectric material, such as a wroelectric crystal lilce LiTaO3. The pyroelectric cryst~l 11 is flpproximately 50 ~Jm thiclc and measures 3.5mm by 3.5mm.
An infrared receiving electrode 12, which receives infrured rays, is mounted on tlle upper face of pyroelectric crys~al 11. The infrared receiving electrode 12 is a ~3isk ~vhic}l measures 2mm in diameter, At the other face o~ wroelectric crystal 11 is a shield electrode 13; shield electrode 13 covers. the whole face of crystal 1]. A substrate 15 ma~le of semiconductive material sucll ns silicon is fastened to the shield ~lectrode 13 by conductive glue 14. The main plane, of silicon substrate 15 has an orientation in the (100) plane; it measures 250 ,um tilick nnd is a square measuring 3.5 mm by 3.5mm. In the center of silicon substrate 15 is a square hole 16 which measures 2.5mm by 2.5mrn. The hole 16 is made by selective etching. The position of the open nrea of hole 16 corresponds to the position of infrared receiving electrode 12 although hole 16 is substantially broader than infrared receiving electrode 12. The legs of silicon substrate 15 nre fastened to stand 18 by conductive glue 17. The stand 18 and the lead terminal 20 are insulated frorn each otller by insulating material 19. A lead wire 21 electrically connec.s lead terminal 20 and the ;nfrared receiving electrode 12. Lead wire 21 -;s made of a material such as gold or aluminum.
The pyroelectric detector shown in Figure 41~ is mounted and ~ssembled in a package as shown in Figure 41B and an electric circuit for the pyroelectric detector of Figure 4B is shown in Pigure 5. Jn this embodiment~ ;nfrared receiving electrode 12 contacts conductive supporting members 22a and 22b. On the stand next to pyroelectric crystal 11, resistors 23 and 24 and field effect transistor FET 25 are mounted, Stand 18 is hermetically sealed witll N2 gas by cap 2G; cap 25 has a silicon window 27 at the center. Three pillS or terminals Tl, T2, and T3 project through stand 18. Tlle pin Tl, wl-ich is grounded, is connected directly to stand 18; the pin T2 is connected to resistor 24 ~d the source of FET 25; and the pin T3 is connected to the drain of FET 25. Conductive supporting member 22b is connccted to t11e gate of FET 25 and conductive supporting member 22n is connected to resistor 23. ~csistors 21 ~nd 24, which also ar~ colmected to S;~
~ ~ 7 ~
18"1~ve resistallce values of 1011 and 10~ ollms, respectivcly. Whcn infrared rays pass through silicon window 27, they strikc infrared recci~ing electrode 12 producing an output voltnge between pin Tl and pin T2.
In the embodiment shown in Figures ~A and 4B, the ~eat capacity is small because of the hole in substrate 15. Also, it is Imnecessary to interconnect shield electrode 13 and stand 18 with wire because substrate 15 is made of conductive or semiconductive material sucll as silicon and the suhstrate is fastened by conductive glue 1~ and 17. l~urthermore, this pyroelectric detector is durable because pyroelectric cr~7stal 11 is supported by substrate 15.
The pyroelectric detector sllown in E~igure 4A is manufactured in accordance with the method shown in Pig. 6. In ~ig. 6(a), a sllield ëlectrode 13 is formed on a pyroelectric crystal wafer 31 which rneEIsures 63mm in diameter and 250 ,um thick and wl~ich is made of a Z suhstrate of LiTaO3. The shield electrode 13, which may be made of nichron e, is formed by vacuum evaporation or sputtering. In Figure G(b), nn oxide film is formed on one face of a silicon substrate 15 wilich measures 63mm in diameter and 2S0 ~um thick. The silicone substrate has an orientation (100). The oxide film 32 has square holes measuring 2.8mm x 2.8mm and it acts as a mask pattern for etcll;ng. P~s shown in ~ re 6(c), the other face of silicon substrate lS is fastened to the shield electrode 13 of the wafer 31 by conductive glue 1~. Then, as shown in Fig. 6(d), the other face of the pyroelectric crystal wafer 31 is ground until the ~vafer achieves a thickness of 5û JUm~
The combined pyroelectric crystal wafer 31 and silicon substrate 15 is dipped into liquid Hydrazine at 100 C. The Hydrazine has a fast etching rate in tlle (100) direction and a slow etching~ rate in the ~111) direction. Therefore, silicon substrate 15 is etclled selectively at a 57 angle against the (100) face of tlle crystal. By selective etchiJlg, square holes 16, which each measure 2.5mm x 2.5mm, are made in silicc)n . substrate 15 as shown in ~ig. 6(e). As shown in ~igO 6(f), the oxide film 32 is removed and infrared receiving electrodes 12 are formed on tlle ground face of wafer 31. Each electrode 12 is a disk measul ing
PYROELECTRIC DETECTOR AN~ METHOD
FOR MANUP'~CTURING T~E SAME
BACKGROUND OF THE INVENTION
This invention relates to a device for detecting infra-red rays utilizing the pyro~lectric effect and methods for manufacturing the same.
Generally, pyroelectric materials are use in pyroelec-tric detectors for detecting infrared rays by utilizing the pyroelectric effect. However, if the heat capacity of the pyroelectric material is great, the pyroelectric material can-not respond to a fast change in the energy of infrared rays.
10 Therefore, various techniques are used in the prior art to reduce the heat capacity of pyroelectric materials. For example, by reducing the thickness of the pyroelectric material to about 30-50 ,um, heat capacity is reduced.
Since it now will be necessary to refer to the drawings 15 appended hereto, they will first be described briefly.
BRIEF DESCRIPTION OF THE DRAWINGS
The exact nature of this invention, as well as other objects and advantages thereof, will be readily apparent from conside-ration of the following specification and drawings.
Figure 1 shows a longitudinal sectional view of one prior art embodiment of a pyroelectric detector.
A~" ~ i7 ~
~2--Figure 2 shows a longitudinal sectional view of another prior art embodimen-t of a pyroelectric detector.
Figure 3 shows a longitudinal sectional view of a third prior art embodiment of a pyroelectric detector.
Figure 4A shows a longitudinal sectional view of one embodiment of the pyroelectric detector of the present invention.
Figure 4B shows a perspective view, partly in section, of the pyroelec-tric detector shown in Fiyure 4~.
Figure 5 shows a wiring diagram Eor the pyroelectric detector.
Figure 6 illustrates a sequence of steps in accor-dance with one method of making the pyroelectric detector.
Figure 7 illustrates a sequence of steps in accor-dance with another method of making the invention.
Figure 8 illustrates a sequence of steps in accor-dance with a further embodiment of the method of the invention.
In the prior art, heat capacity also is reduced by exposing the pyroelectric material to air and mounting the pyroelectric material on a heat insulated substrate. A
technique for exposing the pyroelectri~ material to air is shown in Fig. 1. A piezoelectric crystal 3 is mounted on a stand 5 by the wires 4 and 5. The electrode 1 for receiving infrared rays and the shield electrode 2 are formed on different sides of the piezoelectric crystal 3. Although heat capacity is reduced, the pyroelectric detector shown in Figure 1 is not reliable or durable; it also is very difficult to manufacture and treat the pyroelectric detector because the pyroelectric crystal 3 is so thin.
Another prior art technique is shown in Figure 2.
The shield electrode 2, which is formed on one side of piezoelectric crystal 3, is connected to the heat insula- ~
ted substrate 6 which is in turn mounted on the stand 5.
The pyroelectric detector shown in Fig. 2 has the dis-advatantage that it is difficult to connect wire 4 to the shield electrode 2.
t, ~7~
Another known structure is shown in Fig. 3. This structure is described in Japanese patent publication No.
12272/1976 ~Tokkosho~. The shield electrode 2, which is mounted on one side of piezoelect:ric crystal 3, is formed around a heat insulated substrate 6 and mounted on stand 5 by conductive glue. The heat insulated substrate 6 is covered by an SnO~ film 7 so it is unnecessary to connect the shield electrode 2 to stand 5 by wire 4. However, because the piezoelectric crystal 3 is mounted on the sub-strate 6, the heat capaci-ty is great which prevents the detector from responding to fast changes in the energy of infrared rays. It also is difficult to manufacture and treat the detector shown in Figure 3 because it is neces-sary to mount a very thin pyroelectric crystal.
SUMMARY OF THE INVENTION
.
It is an object of an aspect of this invention to provide a pyroelectric detector which can respond to fast changes in the energy of infrared rays. It is an object of an aspect of this invention to provide a pyroelectric detector:having a strong structure, high durability and high reliability.
It is an ob]ect of an aspect of this invention to provide an improved method for manufacturing pyroelectric detectors using thin pyroelectric material. An object of an aspect of this invention is to provide a method which can be readily used for mass production of pyroelectric detectors.
According to an aspect of this invention, certain of these objects are attained by providing an improved pyroelectric detector. This pyroelectric detector com prises a pyroelectric material, an infrared receiving electrode mounted on one face of the pyroelectric material for receiving infrared rays, a shield electrode mounted on the other face of the pyroelectric material, a ` ' .
-3a-a substrate made of a semiconductive or concluctive ma-terial having a hole hroader than the inErared receiv:ing elec-trode, the substrate being connected to the shield electrode by conductive glue, and a stand to which the substrate is con-nected by conductive glue.
Also, according to an aspect of this invention, certain of these objects are attained by providing various methods of manufacturing pyroelectric detec-toxs. A shield electrode is formed on one face oE a wafer of pyroelectric material and holes are made in a substrate of semiconduc-tive or conductive material which is glued to the shield electrode by conductive glue. The other face of the wafer of pyroelectric material is ground and infrared receiving electrodes are formed thereon for receiving infrared rays Each infrared receiving electxode, which has an area sub-stantially less than the area of each hole in the substrate, is positioned over one of the holes. The wafer of pyro-electric material than is diced at positions between the holes.
Various apsects of the invention are as follows:
A pyroelectric detector comprising:
a pyroelectric materiali an infrared receiving electrode mounted on one face of said pyroelectric material for receiving infrared rays;
a shield electrode placed at the other face of said pyroelectric material;
a substrate made of semiconductive or conductive material fastened to said shield electrode by conductive glue, said substrate having an enclosed aperture substantially broad-er than said infrared receiving electrode; and a stand to which said substrate is fastened by conduc-tive glue.
A method of manufacturing pyroelectric detectors com-prising the steps of:
forming a shield elec-trode on one face of a wafer of pyroelectric mat:erial;
r;,S.r -3b-fastening a substrate made of semiconductive material to said shleld electrode by conductive glue;
grinding the other face of said wafer of pyroelectric material;
makiny enclosed apertures in said substrate;
forming infrared receiving electrodes for receiving infrared rays on the other face of said wafer of pyroelectric material, each of said receiving electrodes having an area substantially less than the area of a corresponding one of said enclosed apertures, each of said infrared receiving elec~rodes being positioned over one of said enclosed aper-tures on said other face of said shield electrode; and dicing said pyroelectric material at positions between said enclosed apertures.
A method of manufacturing pyroelectric detectors comprising the steps of:
forming a shield electrode on one face of a wafer of pyroelectric material;
making enclosed apertures through a substrate made of semiconductor or conductive material;
fastening said substrate to said shield electrode by conductive glue;
grinding the other face of said wafer of pyro-electric material;
forming infrared receiving electrodes for receiving infrared rays on the other face of said wafer of pyroelec-tric material, each of said infrared receiving electrodes having an area substantially less than the area of each of said enclosed apertures, each of said infrarad receiving electrodes being positioned over one of said enclosed apertures on said other face; and dicing said pyroelectric material at positions between said enclosed apertures.
,, .
.
3c-A method of manufacturing pyroelectric detectors comprising the steps of:
forming a shield electrode on one face of a wafer of pyroelectric material;
forming a conductive thick-film paste on said shield electrode, said thick-film paste having enclosed apertures therein;
grinding the other face oi- said wafer of pyroelec-tric material;
forming infrared receiving electrodes for receiving infrared rays on the other face of each pyroelectric material, each of said i.nfrared receiving electrodes having an area substantially less than the area of each said enclosed apertures, each of said infrared receiving electrodes being positioned over one of said enclosed apertures on said other face; and dicing said pyroelectric material at positions between the enclosed apertures.
DESCRIPTION OF THE PREFERRED EMBODIMENT
Figure 4A shows a cross-sectional view of the prefer-red embodiment of the pyroelectric detector of the invention.
The crystal .
: , .
3'~
Il is n waîcr of pyroelectric material, such as a wroelectric crystal lilce LiTaO3. The pyroelectric cryst~l 11 is flpproximately 50 ~Jm thiclc and measures 3.5mm by 3.5mm.
An infrared receiving electrode 12, which receives infrured rays, is mounted on tlle upper face of pyroelectric crys~al 11. The infrared receiving electrode 12 is a ~3isk ~vhic}l measures 2mm in diameter, At the other face o~ wroelectric crystal 11 is a shield electrode 13; shield electrode 13 covers. the whole face of crystal 1]. A substrate 15 ma~le of semiconductive material sucll ns silicon is fastened to the shield ~lectrode 13 by conductive glue 14. The main plane, of silicon substrate 15 has an orientation in the (100) plane; it measures 250 ,um tilick nnd is a square measuring 3.5 mm by 3.5mm. In the center of silicon substrate 15 is a square hole 16 which measures 2.5mm by 2.5mrn. The hole 16 is made by selective etching. The position of the open nrea of hole 16 corresponds to the position of infrared receiving electrode 12 although hole 16 is substantially broader than infrared receiving electrode 12. The legs of silicon substrate 15 nre fastened to stand 18 by conductive glue 17. The stand 18 and the lead terminal 20 are insulated frorn each otller by insulating material 19. A lead wire 21 electrically connec.s lead terminal 20 and the ;nfrared receiving electrode 12. Lead wire 21 -;s made of a material such as gold or aluminum.
The pyroelectric detector shown in Figure 41~ is mounted and ~ssembled in a package as shown in Figure 41B and an electric circuit for the pyroelectric detector of Figure 4B is shown in Pigure 5. Jn this embodiment~ ;nfrared receiving electrode 12 contacts conductive supporting members 22a and 22b. On the stand next to pyroelectric crystal 11, resistors 23 and 24 and field effect transistor FET 25 are mounted, Stand 18 is hermetically sealed witll N2 gas by cap 2G; cap 25 has a silicon window 27 at the center. Three pillS or terminals Tl, T2, and T3 project through stand 18. Tlle pin Tl, wl-ich is grounded, is connected directly to stand 18; the pin T2 is connected to resistor 24 ~d the source of FET 25; and the pin T3 is connected to the drain of FET 25. Conductive supporting member 22b is connccted to t11e gate of FET 25 and conductive supporting member 22n is connected to resistor 23. ~csistors 21 ~nd 24, which also ar~ colmected to S;~
~ ~ 7 ~
18"1~ve resistallce values of 1011 and 10~ ollms, respectivcly. Whcn infrared rays pass through silicon window 27, they strikc infrared recci~ing electrode 12 producing an output voltnge between pin Tl and pin T2.
In the embodiment shown in Figures ~A and 4B, the ~eat capacity is small because of the hole in substrate 15. Also, it is Imnecessary to interconnect shield electrode 13 and stand 18 with wire because substrate 15 is made of conductive or semiconductive material sucll as silicon and the suhstrate is fastened by conductive glue 1~ and 17. l~urthermore, this pyroelectric detector is durable because pyroelectric cr~7stal 11 is supported by substrate 15.
The pyroelectric detector sllown in E~igure 4A is manufactured in accordance with the method shown in Pig. 6. In ~ig. 6(a), a sllield ëlectrode 13 is formed on a pyroelectric crystal wafer 31 which rneEIsures 63mm in diameter and 250 ,um thick and wl~ich is made of a Z suhstrate of LiTaO3. The shield electrode 13, which may be made of nichron e, is formed by vacuum evaporation or sputtering. In Figure G(b), nn oxide film is formed on one face of a silicon substrate 15 wilich measures 63mm in diameter and 2S0 ~um thick. The silicone substrate has an orientation (100). The oxide film 32 has square holes measuring 2.8mm x 2.8mm and it acts as a mask pattern for etcll;ng. P~s shown in ~ re 6(c), the other face of silicon substrate lS is fastened to the shield electrode 13 of the wafer 31 by conductive glue 1~. Then, as shown in Fig. 6(d), the other face of the pyroelectric crystal wafer 31 is ground until the ~vafer achieves a thickness of 5û JUm~
The combined pyroelectric crystal wafer 31 and silicon substrate 15 is dipped into liquid Hydrazine at 100 C. The Hydrazine has a fast etching rate in tlle (100) direction and a slow etching~ rate in the ~111) direction. Therefore, silicon substrate 15 is etclled selectively at a 57 angle against the (100) face of tlle crystal. By selective etchiJlg, square holes 16, which each measure 2.5mm x 2.5mm, are made in silicc)n . substrate 15 as shown in ~ig. 6(e). As shown in ~igO 6(f), the oxide film 32 is removed and infrared receiving electrodes 12 are formed on tlle ground face of wafer 31. Each electrode 12 is a disk measul ing
2.0n~n in diameter. The position of each electrode 12 corresponds to tlle position of a hole 16 and eacll electrode 12 ilas an area substnlltially :
~$~3'~
~ 6 --less than the area of the corrcsponding hole 16.
~ igure 6(g) is an upper vie~v of the wafer 31 after completior of the steps in Fi~lres 6(n~(f). In Figure 6(g), the dotted line s~uares indicate holes 16 altl10ugll the nctual distance between holes IG is grcater than shown in Figure 6(g). The wafer 31 is diced between holes lG by a dicing machine to form n plurality of chips as shown in ~igures 6(h) nnd 6(i). The cllip then is mounted on stand lS alld fastened by conductiYe glue 17 as shown in ~igure 6(j).
The method shown in Fig. 6 makes it easy to manufllcture pyroelectric detectors because one large wafer is used. Ther~fore, it is possible to mass-produce the pyroelectric detectors. Also7 by using a universal dicing machine, cheap pyroeleotric detectors can be obtailled.
Yarious modificat;ons can be made in the method sho-Nn in ~igure 6. Instead of the silicon substrate 15g substrates made of Ge, ~aAs, or Gap can be used. Also, the step of making holes may be done before the step of grinding the other fnce of pyroelectric crys.al wafer 31.
~ igure 7 shows another embodiment of the invention for ~nanufacturing pyroelectric detectors. A shield electrode 42 is formcd on one whole side of pyroelectric crystal wafer 41 in ~igure 7(a)~ As shown in lFig. 7(b), circular holes 43 are made through a substrate 44.
The substrate ~4 is made of a semiconductive or conductive material such as Si, Ge, GaAs, GaP, or metal. Circular holes 43 are mnde by a-conventional mechanical process such as an ultrasonic horn method or a sand brass method.
As shown in Pigure 7(c), substrate 44 is fastened to the shield electrode 42 OI the wafer 41 by conductive glue 15. In ~igure 7(d), tlle other face of the pyroelectric crystal wafer 41 is ground until the wafer is ~bou~ 50 ~m thick. In Figure 7(e3, on the groulld face of wafer 41, infrared receiving electrodes ~6 are formed. Each of the infrared receiving electrodes 46 is a disk, and the diameter of each disk is less than the diameter of each circular hole 43. The pOSitiOll of each infrared receiving electrode 46 corresponds to the position a hole ~3. Then, as shown in ~igures 7(f) and ~g~, bonding electrodcs A7 are formed between infrared recciving electrodes 46. ~ re 7(~) sIIolls -- 7 ~
.
~n upper view of the w~ifer ~1 in which IIOIGS ~3 are dcsignated by dotted lines.
The wafer ~1 shown in Figure 7(g) is diced into chips by a ~miversal dicing machine between circular holcs 43. ~igurcs 7(il) and ~(i) show an individual chip. The chip of pyroelectric crystal 48 is mounted on stand ~9 by conductive glue 50 as shown in ~igure 7(j). ~;
lead terminal 51, whicll is supported by insulating malerial 52, is ~leetrically connects~d ~o bonding electrode 47 by lead wire 53. Bonding electrode 47 corresponds to conduc:tive supporting members 22a and 22b in Figure ~B. l'he pyroelectric detector in Figure 7(i) is assembled ns shown in Figure 4B.
In the method shown in ~igure 7, the step of rnnlcin~ holes is done by a meehanical proeess7 and the time to manufactue pyroelectric detectors. is short. The pyroeleetrie detector manufactured aceordirlg to Figure 7 is more durable than the pyroelectri e deteetor of ~igure 6 because the hole 46 OI substrate 44 is cireu'lar and the contact area between substrate 44 and stand 49 is large.
Figure 8 shows yet another embodiment of the invention for nanufacturing pyroelectric deteetors. A shield eleetrode G2 is formed on one whole side of pyroelectric erystal wafer Gl in Figure 8(a). Ne~ct, as shown in Figure 8(b), a substrate 63 made of conduetive thick--film paste and having cireular holes 64 is formed on tlle shield electrode 62. The conduetive thick-film paste is applied to the shield eleetrode 62, except in areas where the holes 64, are made, by' screen printing for one hour. The s~onductive thiclc-film paste then is balced for one hour.
~ s shown in ~igure 8(c), the other face of wroelectrie erystal wafer 61 is ground until the thiclcness is about 50 mm. As sho~vn in Figure 8(d), on the ground faee of wafer 61~ infrared receiving electrocies ¢5 ~re formed. l'he infrared reeeiving eleetrodes 65 nre Iormed by sputtering or vaecum evapor~tion of nichrome. Each of the infrared reeeiving electrodes 65 is a disk whieh measures 2.0 mrn in diameter;
the diameter of eleetrodes G5 is less than the diameter OI each of the eireular holes 64. The position of each electrodc G5 corresponds to tllc position of a hole 64. Bonding electrodes 6û are îormed adjaccnt to r3 .
and in cont~ct with the ~nfr~lred receivillg electrodes G5 ns sl~owl-l in I~igure 8(e~. Bonding electrodes 66, which al e m~de of aluminum ubout l ~um thiclc, are formed by vaccum evaporllt;on.
The wafer 61 is diced between holes 64 at the dotted line positions shown in Figure 8(e) by a universal dicing machine to form individual chips. A ehip then is mounted on stand 68 and f~stened by conductive glue 69. The chip 67 is ~ssembled and pack~ged ~ sJlown in ~igure 4B.
In the method shown in Figure 8, it is e~sy to manui~nc~ure pyroelectric detectors because a substrflte 63 made of conductive thiek-film paste is directly formed on the wroelectrie crystal wafel ~l without ma',~ing holes.
ln all the embodiments OI the method of this invention, pyroeleetri,e crystals such as a crystal of I.iTaO3 are used ~s elements for detecting infrared rays. Other pyroelectric materials can be used such as triglycine sulphate (TGS), stroiltium barium niobate (SBN), PbTjO3 ~nd PZT - type ferroelectrie ceramics.
~ lthough illustrative embodiments of the invention have been deseribed in detail with referenee to the accompanying drawings, it is to be understood that various changes and rmodifications could be effected therein by are slcilled in the art without departing from the scope and spirit of the invention.
~ . .
., .
... . . . . . .. . .. .. . .. .
~$~3'~
~ 6 --less than the area of the corrcsponding hole 16.
~ igure 6(g) is an upper vie~v of the wafer 31 after completior of the steps in Fi~lres 6(n~(f). In Figure 6(g), the dotted line s~uares indicate holes 16 altl10ugll the nctual distance between holes IG is grcater than shown in Figure 6(g). The wafer 31 is diced between holes lG by a dicing machine to form n plurality of chips as shown in ~igures 6(h) nnd 6(i). The cllip then is mounted on stand lS alld fastened by conductiYe glue 17 as shown in ~igure 6(j).
The method shown in Fig. 6 makes it easy to manufllcture pyroelectric detectors because one large wafer is used. Ther~fore, it is possible to mass-produce the pyroelectric detectors. Also7 by using a universal dicing machine, cheap pyroeleotric detectors can be obtailled.
Yarious modificat;ons can be made in the method sho-Nn in ~igure 6. Instead of the silicon substrate 15g substrates made of Ge, ~aAs, or Gap can be used. Also, the step of making holes may be done before the step of grinding the other fnce of pyroelectric crys.al wafer 31.
~ igure 7 shows another embodiment of the invention for ~nanufacturing pyroelectric detectors. A shield electrode 42 is formcd on one whole side of pyroelectric crystal wafer 41 in ~igure 7(a)~ As shown in lFig. 7(b), circular holes 43 are made through a substrate 44.
The substrate ~4 is made of a semiconductive or conductive material such as Si, Ge, GaAs, GaP, or metal. Circular holes 43 are mnde by a-conventional mechanical process such as an ultrasonic horn method or a sand brass method.
As shown in Pigure 7(c), substrate 44 is fastened to the shield electrode 42 OI the wafer 41 by conductive glue 15. In ~igure 7(d), tlle other face of the pyroelectric crystal wafer 41 is ground until the wafer is ~bou~ 50 ~m thick. In Figure 7(e3, on the groulld face of wafer 41, infrared receiving electrodes ~6 are formed. Each of the infrared receiving electrodes 46 is a disk, and the diameter of each disk is less than the diameter of each circular hole 43. The pOSitiOll of each infrared receiving electrode 46 corresponds to the position a hole ~3. Then, as shown in ~igures 7(f) and ~g~, bonding electrodcs A7 are formed between infrared recciving electrodes 46. ~ re 7(~) sIIolls -- 7 ~
.
~n upper view of the w~ifer ~1 in which IIOIGS ~3 are dcsignated by dotted lines.
The wafer ~1 shown in Figure 7(g) is diced into chips by a ~miversal dicing machine between circular holcs 43. ~igurcs 7(il) and ~(i) show an individual chip. The chip of pyroelectric crystal 48 is mounted on stand ~9 by conductive glue 50 as shown in ~igure 7(j). ~;
lead terminal 51, whicll is supported by insulating malerial 52, is ~leetrically connects~d ~o bonding electrode 47 by lead wire 53. Bonding electrode 47 corresponds to conduc:tive supporting members 22a and 22b in Figure ~B. l'he pyroelectric detector in Figure 7(i) is assembled ns shown in Figure 4B.
In the method shown in ~igure 7, the step of rnnlcin~ holes is done by a meehanical proeess7 and the time to manufactue pyroelectric detectors. is short. The pyroeleetrie detector manufactured aceordirlg to Figure 7 is more durable than the pyroelectri e deteetor of ~igure 6 because the hole 46 OI substrate 44 is cireu'lar and the contact area between substrate 44 and stand 49 is large.
Figure 8 shows yet another embodiment of the invention for nanufacturing pyroelectric deteetors. A shield eleetrode G2 is formed on one whole side of pyroelectric erystal wafer Gl in Figure 8(a). Ne~ct, as shown in Figure 8(b), a substrate 63 made of conduetive thick--film paste and having cireular holes 64 is formed on tlle shield electrode 62. The conduetive thick-film paste is applied to the shield eleetrode 62, except in areas where the holes 64, are made, by' screen printing for one hour. The s~onductive thiclc-film paste then is balced for one hour.
~ s shown in ~igure 8(c), the other face of wroelectrie erystal wafer 61 is ground until the thiclcness is about 50 mm. As sho~vn in Figure 8(d), on the ground faee of wafer 61~ infrared receiving electrocies ¢5 ~re formed. l'he infrared reeeiving eleetrodes 65 nre Iormed by sputtering or vaecum evapor~tion of nichrome. Each of the infrared reeeiving electrodes 65 is a disk whieh measures 2.0 mrn in diameter;
the diameter of eleetrodes G5 is less than the diameter OI each of the eireular holes 64. The position of each electrodc G5 corresponds to tllc position of a hole 64. Bonding electrodes 6û are îormed adjaccnt to r3 .
and in cont~ct with the ~nfr~lred receivillg electrodes G5 ns sl~owl-l in I~igure 8(e~. Bonding electrodes 66, which al e m~de of aluminum ubout l ~um thiclc, are formed by vaccum evaporllt;on.
The wafer 61 is diced between holes 64 at the dotted line positions shown in Figure 8(e) by a universal dicing machine to form individual chips. A ehip then is mounted on stand 68 and f~stened by conductive glue 69. The chip 67 is ~ssembled and pack~ged ~ sJlown in ~igure 4B.
In the method shown in Figure 8, it is e~sy to manui~nc~ure pyroelectric detectors because a substrflte 63 made of conductive thiek-film paste is directly formed on the wroelectrie crystal wafel ~l without ma',~ing holes.
ln all the embodiments OI the method of this invention, pyroeleetri,e crystals such as a crystal of I.iTaO3 are used ~s elements for detecting infrared rays. Other pyroelectric materials can be used such as triglycine sulphate (TGS), stroiltium barium niobate (SBN), PbTjO3 ~nd PZT - type ferroelectrie ceramics.
~ lthough illustrative embodiments of the invention have been deseribed in detail with referenee to the accompanying drawings, it is to be understood that various changes and rmodifications could be effected therein by are slcilled in the art without departing from the scope and spirit of the invention.
~ . .
., .
... . . . . . .. . .. .. . .. .
Claims (15)
1. A pyroelectric detector comprising:
a pyroelectric material;
an infrared receiving electrode mounted on one face of said pyroelectric material for receiving infrared rays;
a shield electrode placed at the other face of said pyroelectric material;
a substrate made of semiconductive or conductive material fastened to said shield electrode by conductive glue, said substrate having an enclosed aperture substantially broad-er than said infrared receiving electrode; and a stand to which said substrate is fastened by conduc-tive glue.
a pyroelectric material;
an infrared receiving electrode mounted on one face of said pyroelectric material for receiving infrared rays;
a shield electrode placed at the other face of said pyroelectric material;
a substrate made of semiconductive or conductive material fastened to said shield electrode by conductive glue, said substrate having an enclosed aperture substantially broad-er than said infrared receiving electrode; and a stand to which said substrate is fastened by conduc-tive glue.
2. A pyroelectric detector as set forth in claim 1 where-in said substrate is made of silicon.
3. A pyroelectric detector as set forth in claim 1 where-in said substrate is made of germanium.
4. A pyroelectric detector as set forth in claim 1 where-in said substrate is made of GaAS.
5. A pyroelectric detector as set forth in claim 1 where-in said substrate is made of GaP.
6. A pyroelectric detector as set forth in claim 1 where-in said substrate is made of a metal.
7. A pyroelectric detector as set forth in claim 1 where-in said substrate is made of conductive thick-film paste.
8. A pyroelectric detector as set forth in claim 1 where-in said pyroelectric material is LiTaO3 crystal.
9. A method of manufacturing pyroelectric detectors com-prising the steps of:
forming a shield electrode on one face of a wafer of pyroelectric material;
fastening a substrate made of semiconductive material to said shield electrode by conductive glue;
grinding the other face of said wafer of pyroelectric material;
making enclosed apertures in said substrate;
forming infrared receiving electrodes for receiving infrared rays on the other face of said wafer of pyroelectric material, each of said receiving electrodes having an area substantially Less than the area of a corresponding one of said enclosed apertures, each of said infrared receiving electrodes being positioned over one of said enclosed aper-tures on said other face of said shield electrode; and dicing said pyroelectric material at positions between said enclosed apertures.
forming a shield electrode on one face of a wafer of pyroelectric material;
fastening a substrate made of semiconductive material to said shield electrode by conductive glue;
grinding the other face of said wafer of pyroelectric material;
making enclosed apertures in said substrate;
forming infrared receiving electrodes for receiving infrared rays on the other face of said wafer of pyroelectric material, each of said receiving electrodes having an area substantially Less than the area of a corresponding one of said enclosed apertures, each of said infrared receiving electrodes being positioned over one of said enclosed aper-tures on said other face of said shield electrode; and dicing said pyroelectric material at positions between said enclosed apertures.
10. A method of manufacturing pyroelectric detectors as set forth in claim 9 wherein one of Si,Ge, GaAs, or GaP is used as said substrate.
11. A method of manufacturing pyroelectric detectors as set forth in claim 10 wherein the step of making enclosed apertures in the substrate is done by selective etching.
12. A method of manufacturing pyroelectric detectors comprising the steps of:
forming a shield electrode on one face of a wafer of pyroelectric material;
making enclosed apertures through a substrate made of semiconductor or conductive material;
fastening said substrate to said shield electrode by conductive glue;
grinding the other face of said wafer of pyroelectric material;
forming infrared receiving electrodes for receiving infrared rays on the other face of said wafer of pyroelectric material, each of said infrared receiving electrodes having an area substantially less than the area of each of said enclosed apertures, each of said infrared receiving electrodes being positioned over one of said enclosed apertures on said other face; and dicing said pyroelectric material at positions between said enclosed apertures.
forming a shield electrode on one face of a wafer of pyroelectric material;
making enclosed apertures through a substrate made of semiconductor or conductive material;
fastening said substrate to said shield electrode by conductive glue;
grinding the other face of said wafer of pyroelectric material;
forming infrared receiving electrodes for receiving infrared rays on the other face of said wafer of pyroelectric material, each of said infrared receiving electrodes having an area substantially less than the area of each of said enclosed apertures, each of said infrared receiving electrodes being positioned over one of said enclosed apertures on said other face; and dicing said pyroelectric material at positions between said enclosed apertures.
13. A method of manufacturing pyroelectric detectors set forth in claim 12 wherein one of Si,Ge GaAs, GaP, or a metal is used as said substrate.
14. A method of manufacturing pyroelectric detectors set forth in claim 13 wherein the step of making enclosed apertures in the substrate is done by a mechanical process.
15. A method of manufacturing pyroelectric detectors comprising the steps of:
forming a shield electrode on one face of a wafer of pyroelectric material;
forming a conductive thick-film paste on said shield electrode, said thick-film paste having enclosed apertures therein;
grinding the other face of said wafer of pyroelec-tric material;
forming infrared receiving electrodes for receiving infrared rays on the other face of each pyroelectric material, each of said infrared receiving electrodes having an area substantially less than the area of each said enclosed apertures, each of said infrared receiving electrodes being positioned over one of said enclosed apertures on said other face; and dicing said pyroelectric material at positions between the enclosed apertures.
forming a shield electrode on one face of a wafer of pyroelectric material;
forming a conductive thick-film paste on said shield electrode, said thick-film paste having enclosed apertures therein;
grinding the other face of said wafer of pyroelec-tric material;
forming infrared receiving electrodes for receiving infrared rays on the other face of each pyroelectric material, each of said infrared receiving electrodes having an area substantially less than the area of each said enclosed apertures, each of said infrared receiving electrodes being positioned over one of said enclosed apertures on said other face; and dicing said pyroelectric material at positions between the enclosed apertures.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54122947A JPS6037413B2 (en) | 1979-09-25 | 1979-09-25 | infrared detection device |
| JP122947/54 | 1979-09-25 | ||
| JP38035/55 | 1980-03-03 | ||
| JP38043/55 | 1980-03-03 | ||
| JP3804380A JPS56133632A (en) | 1980-03-25 | 1980-03-25 | Manufacture of infrared-ray detector |
| JP3803580A JPS56133631A (en) | 1980-03-25 | 1980-03-25 | Infrared-ray detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1175130A true CA1175130A (en) | 1984-09-25 |
Family
ID=27289676
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000360797A Expired CA1175130A (en) | 1979-09-25 | 1980-09-23 | Pyroelectric detector and method for manufacturing same |
Country Status (3)
| Country | Link |
|---|---|
| CA (1) | CA1175130A (en) |
| DE (1) | DE3035933C2 (en) |
| GB (1) | GB2061616B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2125214B (en) * | 1982-07-23 | 1985-10-02 | Philips Electronic Associated | Pyroelectric infra-red radiation detector |
| GB2145875B (en) * | 1983-08-12 | 1986-11-26 | Standard Telephones Cables Ltd | Infra-red-detector |
| DE3478496D1 (en) * | 1983-12-09 | 1989-07-06 | Kureha Chemical Ind Co Ltd | An infrared sensor |
| DE3413921A1 (en) * | 1984-04-13 | 1985-10-24 | Preh, Elektrofeinmechanische Werke Jakob Preh Nachf. Gmbh & Co, 8740 Bad Neustadt | METHOD FOR PRODUCING AN INFRARED DETECTOR |
| EP0558766B1 (en) * | 1991-09-24 | 1997-05-02 | Nohmi Bosai Ltd. | Pyroelectric element |
| JP3289677B2 (en) | 1998-05-25 | 2002-06-10 | 株式会社村田製作所 | Infrared sensor |
| CN112768598B (en) * | 2021-01-27 | 2022-11-15 | 山东大学 | Infrared pyroelectric detector and preparation method thereof |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE376798B (en) * | 1970-05-07 | 1975-06-09 | Western Electric Co | |
| CA938018A (en) * | 1970-10-20 | 1973-12-04 | Yamaka Eiso | Infrared intensity detector using a pyroelectric polymer |
| US3801949A (en) * | 1973-03-08 | 1974-04-02 | Rca Corp | Thermal detector and method of making the same |
| US4009516A (en) * | 1976-03-29 | 1977-03-01 | Honeywell Inc. | Pyroelectric detector fabrication |
-
1980
- 1980-09-23 CA CA000360797A patent/CA1175130A/en not_active Expired
- 1980-09-24 GB GB8030792A patent/GB2061616B/en not_active Expired
- 1980-09-24 DE DE3035933A patent/DE3035933C2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE3035933A1 (en) | 1981-04-09 |
| DE3035933C2 (en) | 1986-04-03 |
| GB2061616B (en) | 1983-09-14 |
| GB2061616A (en) | 1981-05-13 |
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