GB2061616A - Pyroelectric detector - Google Patents
Pyroelectric detector Download PDFInfo
- Publication number
- GB2061616A GB2061616A GB8030792A GB8030792A GB2061616A GB 2061616 A GB2061616 A GB 2061616A GB 8030792 A GB8030792 A GB 8030792A GB 8030792 A GB8030792 A GB 8030792A GB 2061616 A GB2061616 A GB 2061616A
- Authority
- GB
- United Kingdom
- Prior art keywords
- pyroelectric
- substrate
- face
- holes
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 239000000463 material Substances 0.000 claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 claims abstract description 23
- 239000004020 conductor Substances 0.000 claims abstract description 6
- 238000000227 grinding Methods 0.000 claims abstract description 5
- 239000004065 semiconductor Substances 0.000 claims abstract 2
- 239000013078 crystal Substances 0.000 claims description 28
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 15
- 239000000853 adhesive Substances 0.000 claims description 6
- 230000001070 adhesive effect Effects 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- 229910005540 GaP Inorganic materials 0.000 claims description 3
- 238000010297 mechanical methods and process Methods 0.000 claims description 3
- 230000005226 mechanical processes and functions Effects 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 239000003292 glue Substances 0.000 description 6
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910001120 nichrome Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- 229910003781 PbTiO3 Inorganic materials 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- WOIHABYNKOEWFG-UHFFFAOYSA-N [Sr].[Ba] Chemical compound [Sr].[Ba] WOIHABYNKOEWFG-UHFFFAOYSA-N 0.000 description 1
- 238000010420 art technique Methods 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- XKUKSGPZAADMRA-UHFFFAOYSA-N glycyl-glycyl-glycine Natural products NCC(=O)NCC(=O)NCC(O)=O XKUKSGPZAADMRA-UHFFFAOYSA-N 0.000 description 1
- 108010067216 glycyl-glycyl-glycine Proteins 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910021653 sulphate ion Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
- H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
Abstract
A pyroelectric detector comprises a body of pyroelectric material (11), an electrode (12) for receiving infrared rays on one face of the pyroelectric material, a shield electrode (13) at the other face of the pyroelectric material, a substrate (15) made of a semiconductor or conductive material which is fastened to the shield electrode (13), the substrate having a hole (16) corresponding in position to the position of the infrared receiving electrode, and a support (18) to which the substrate is fastened. The method of manufacturing the pyroelectric detector comprises the steps of forming a shield electrode (13) at one face of a pyroelectric wafer (31), making holes (16) in a substrate (15), fastening the substrate to the shield electrode, grinding the other face of the wafer, forming electrodes (12) on the other face of the wafer for receiving infrared rays, the position of the electrodes corresponding to the position of the holes, and dicing the pyroelectric material between the holes to form a single pyroelectric detector. <IMAGE>
Description
SPECIFICATION
Pyroelectric detector and method for manufacturing same
This invention relates to a device for detecting infrared rays utilizing the pyroelectric effect and methods for manufacturing the same.
Generally, pyroelectric materials are used in pyroelectric detectors for detecting infrared rays by utilizing the pyroelectric effect. However, if the heat capacity of the pyroelectric material is great, the pyroelectric material cannot respond to a fast change in the energy of infrared rays. Therefore, various techniques are used in the prior art to reduce the heat capacity of pyroelectric materials. For example, by reducing the thickness of the pyroelectric material to about 30-50 lim, heat capacity is reduced.
In the prior art, heat capacity also is reduced by exposing the pyroelectric material to air and mounting the pyroelectric material on a heat insulated substrate. A technique for exposing the pyroelectric material to air is shown in Fig. 1. A piezoelectric crystal 3 is mounted on a stand 5 by the wires 4 and 5.
The electrode 1 for receiving infrared rays and the shield electrode 2 are formed on different sides of the piezoelectric crystal 3. Although heat capacity is reduced, the pyroelectric detector shown in Fig. 1 is not reliable or durable; it also is very difficult to manufacture and treat the pyroelectric detector because the pyroelectric crystal 3 is so thin.
Another prior art technique is shown in Fig.
2. The shield electrode 2, which is formed on one side of piezoelectric crystal 3, is connected to the heat insulated substrate 6 which is in turn mounted on the stand 5. The pyroelectric detector shown in Fig. 2 has the disadvantage that it is difficult to connect wire 4 to the shield electrode 2.
Another known structure is shown in Fig. 3.
This structure is described in Japanese patent publication no. 12272/1976 (Tokkosho). The shield electrode 2, which is mounted on one side of piezoelectric crystal 3, is formed around a heat insulated substrate 6 and mounted on stand 5 by conductive glue. The heat insulated substrate 6 is covered by an
SnO2 film 7 so it is unnecessary to connect the shield electrode 2 to stand 5 by wire 4.
However, because the piezoelectric crystal 3 is mounted on the substrate 6, the heat capacity is great which prevents the detector from responding to fast changes in the energy of infrared rays. It also is difficult to manufacture and treat the detector shown in Fig. 3 because it is necessary to mount a very thin pyroelectric crystal.
The present invention seeks to provide a pyroelectric detector which can respond to fast changes in the energy of infrared rays.
The invention also seeks to provide a pyroelectric detector having a strong structure, high durability and high reliability.
The invention further seeks to provide an improved method for manufacturing pyroelectric detectors using thin pyroelectric material, and to provide a method which can be readily used for mass production of pyroelectric detectors.
According to the present invention there is provided a pyroelectric detector comprising: a pyroelectric material; and infrared receiving electrode mounted on one face of said pyroelectric material for receiving infrared rays; and a shield electrode on the other face of said pyroelectric material, the shield electrode being adhesively attached to a substrate made of semiconductive or conductive material which is in turn attached to a support member, the substrate having an aperture beneath the said infrared receiving electrode which aperture is larger in area than the electrode.
The invention also extends to a method of manufacturing pyroelectric detectors, in which a shield electrode is formed on one face of a wafer of pyroelectric material and hoes are made in a substrate of semiconductive or conductive material which is bonded to the shield electrode by conductive adhesive. The other face of the waer of pyroelectric material is ground and infrared receiving electrodes are formed therein for receiving infrared rays.
Each infrared receiving electrode, which has an area substantially less than the area of each hole in the substrate, is positioned over one of the holes. The water of pyroelectric material then is diced at positions between the holes.
Some embodiments of the invention will now be described by way of example with reference to the accompanying drawings, in which:
Figure 1 shows a longitudinal sectional view of one prior art embodiment of a pyroelectric detector,
Figure 2 shows a longitudinal sectional view of another prior art embodiment of a pyroelectric detector,
Figure 3 shows a longitudinal sectional view of a third prior art embodiment of a pyroelectric detector,
Figure 4a shows a longitudinal sectional view of one embodiment of the pyroelectric detector of the present invention;
Figure 5 shows a wiring diagram for the pyroelectric detector;
Figure 6 illustrates a sequence of steps in accordance with one method of making the pyroelectric detector;
Figure 7 illustrates a sequence of steps in accordance with another method of making the invention; and;
Figure 8 illustrates a sequence of steps in accordance with a further embodiment of the method of the invention.
Fig. 4a shows a cross sectional view of the preferred embodiment of th pyroelectric detector of the invention The crystal 11 is a wafer of pyroelectric material, such as a pyroelectric crystal like Lira03. The pyroelectric crystal 11 is approximately 50 lim thick and measures 3.5mm by 3.5mm.
An infrared receiving electrode 12, which receives infrared rays, is mounted on the upper face of pyroelectric crystal 11. The infrared receiving electrode 12 is a disk which measures 2mm in diameter. At the other face of pyroelectric crystal 11 is a shield electrode 13; shield electrode 13 covers the whole face of crystal 11. A substrate 15 made of semiconductive material such as silicon is fastened to the shield electrode 13 by conductive adhesive 14. The main plane of silicon substrate 15 has an orientation in the (100) plane; it measures 250 ym thick and is a square measuring 3.5 mm by 3.5mm. In the center of silicon substrate 15 is a square hole 16 which measures 2.5mm by 2.5mm. The hole 16 is made by selective etching.The position of the open area of hole 16 corresponds to the position of infrared receiving electrode 12 although hole 16 is substantially broader than infrared receiving electrode 12. The legs of silicon substrate 15 are fastened to stand 18 by conductive glue 17. The stand 18 and the lead terminal 20 are insulated from each other by insulating material 19. A lead wire 21 electrically connects lead terminal 20 and the infrared receiving electrode 12. Lead wire 21 is made of a material such as gold or aluminum.
The pyroelectric detector shown in Fig. 4A is mounted and assembled in a package as shown in Fig. 4B and an electric circuit for the pyroelectric detector of Fig. 4B is shown in Fig. 5. In this embodiment, infrared receiving electrode 12 contacts conductive supporting members 22a and 22b. On the stand next to pyroelectric crystal 11, resistors 23 and 24 and field effect transistor FET 25 are mounted. Stand 18 is hermetically sealed with N2 gas by cap 26; cap 26 has a silicon window 27 at the center. Three pins or terminals TI, T2, and T3 project through stand 18. The pin T1, which is grounded, is connected directly to stand 18; the pin T2 is connected to resistor 24 and the source of
FET 25; and the pin T3 is connected to the drain of FET 25.Conductive supporting member 22b is connected to the gate of FET 25 and conductive supporting member 22a is connected to resistor 23. Resistors 23 and 24, which also are connected to stand 18, have resistance values of 10" and 104 ohms, respectively. When infrared rays pass through silicon window 27, they strike infrared receiving electrode 12 producing an output voltage between pin T1 and pin T2.
In the embodiment shown in Figs. 4A and 4B, the heat capacity is small because of the hole in substrate 15. Also, it is unnecessary to interconnect shield electrode 13 and and 18 with wire because substrate 15 is made of conductive or semiconductive material such as silicon and the substrate is fastened by conductive glue 14 and 17. Furthermore, this pyroelectric detector is durable because pyroelectric crystal 11 is supported by substrate 15.
The pyroelectric detector shown in Fig. 4A is manufactured in accordance with the method shown in Fig. 6. In Fig. 6(a), a shield electrode 13 is formed on a pyroelectric crs- tal wafer 31 which measures 63mm in diameter and 250 jim thick and which is made of a
Z substrate of Lira03. The shield electrode 13, which may be made of nichrome, is formed by vacuum evaporation or sputtering.
In Fig. 6(b), an oxide film is formed on one face of a silicon substrate 15 which measures 63 mm in diameter and 250 jim thick The silicon substrate has an orientation (100). The oxide film 32 has square holes measuring 2.8mm X 2.8mm and it acts as a mask pattern for etching. As shown in Fig. 6(c), the other face of silicon substrate 15 is fastened to the shield electrode 13 of the wafer 31 by conductive adhesive 14. Then, as shown in
Fig. 6(d), the other face of the pyroelectric crystal wafer 31 is ground until the wafer achieves a thickness of 50 jim.
The combined pyroelectric crystal wafer 31 and silicon substrate 15 is dipped into liquid
Hydrazine at 100 C. The Hydrazine has a fast etching rate in the < 100 > direction and a a slow etching rate in the < 111 > direction.
Therefore, silicon substrate 15 is etched selec- tively at a 57 angle against the < 100 > face of the crystal. By selective etching, square holes 16, which each measure 2.5mum X 2.5mm, are made in silicon substrate 15 as shown in Fig. 6(e). As shown in
Fig. 6(f), the oxide film 32 is removed and infrared receiving electrodes 12 are formed on the ground face of water 31. Each electrode 12 is a disk measuring 2.0mm in diameter.
The position of each electrode 12 corresponds to the position of a hole 16 and each electrode 12 has an area substantially less than the area of the corresponding hole 16.
Fig. 6(g) is an upper view of the wafer 31 after completion of the steps in Figs. 6(a)-(f).
In Fig. 6(g), the dotted line squares indicate holes 16 although the actual distance between holes 16 is greater than shown in Fig.
6(g). The wafer 32 is diced between holes 16 by a dicing machine to form a plurality of chips as shown in Figs. 6(h) and 6(i). The chip then is mounted on stand 18 and fastened by conductive glue 17 as shown in Fig.
6(j).
The method shown in Fig. 6 makes it easy to manufacture pyroelectric detectors because one large wafer is used. Therefore, it is possible to mass-produce the pyroelectric detectors.
Also, by using a universal dicing machine, cheap pyroelectric detectors can be obtained.
Various modifications can be made in the method shown in Fig. 6. Instead of the silicon substrate 15, substrates made of Ge, GaAS, or Gap can be used. Also, the step of making holes may be done before the step of grinding the other face of pyroelectric crystal wafer 31.
Fig. 7 shows another embodiment of the invention for manufacturing pyroelectric detectors. A shield electrode 42 is formed on one whole side of pyroelectric crystal wafer 41 in
Fig. 7(a). As shown in Fig. 7(b), circular holes 43 are made through a substrate 44. The substrate 44 is made of a semiconductive or conductive material such as Si, Ge, GaAs,
GaP, or metal. Circular holes 43 are made by a conventional mechanical process such as an ultrasonic horn method or a sand brass method.
As shown in Fig. 7(c), substrate 44 is fastened to the shield electrode 42 of the wafer 41 by conductive adhesive 45. In Fig.
7(d), the other face of the pyroelectric crystal wafer 41 is ground until the wafer is about 50 jim thick. In Fig. 7(e), on the ground face of wafer 41, infrared receiving electrodes 46 are formed. Each of the infrared receiving electrodes 46 is a disk, and the diameter of each disk is less than the diameter of each circular hole 43. The position of each infrared receiving electrode 46 corresponds to the position a hole 43. Then, as shown in Figs. 7(f) and (g), bonding electrodes 47 are formed between infrared receiving electrodes 46. Fig.
7(g) shows an upper view of the wafer 41 in which holes 43 are designated by dotted lines.
The wafer 41 shown in Fig. 7(9) is diced into chips by a universal dicing machine between circular holes 43. Figs. 7(h) and 7(i) show an individual chip. The chip of pyroelectric crystal 48 is mounted on stand 49 by conductive glue 50 as shown in Fig. 7(j). A lead terminal 51, which is supported by insulating material 52, is electrically connected to bonding electrode 47 by lead wire 53. Bonding electrode 47 corresponds to conductive supporting members 22a and 22b in Fig. 4B.
The pyroelectric detector in Fig. 7(i) is assembled as shown in Fig. 4B.
In the method shown in Fig. 7, the step of making holes is done by a mechanical process, and the time to manufacture pyroelectric detectors is short. The pyroelectric detector manufactured according to Fig. 7 is more durable than the pyroelectric detector of Fig.
6 because the hole 46 of substrate 44 is circular and the contact area between substrate 44 and stand 49 is large.
Fig. 8 shows yet another embodiment of the invention for manufacturing pyroelectric detectors. A shield electrode 62 is formed on one whole side of pyroelectric crystal wafer 61 in Fig. 8(a). Next, as shown in Fig. 8(b), a substrate 63 made of conductive thick-film paste and having circular holes 64 is formed on the shield electrode 62. The conductive thick-film paste is applied to the shield electrode 62, except in areas where the holes 64 are made, by screen printing for one hour.
The conductive thick-film paste then is baked for one hour.
As shown in Fig. 8(c), the other face of pyroelectric crystal wafer 61 is ground until the thickness is about 50 jim. As shown in
Fig. 8(d), on the ground face of wafer 61, infrared receiving electrodes 65 are formed.
The infrared receiving electrodes 65 are formed by sputtering or vacuum evaporation of nichrome. Each of the infrared receiving electrodes 65 is a disk which measures 2.0 mm in diameter; the diameter of electrodes 65 is less than the diameter of each of the circular holes 64. The position of each electrode 65 corresponds to the position of a hole 64. Bonding electrodes 66 are formed adjacent to and in contact with the infrared receiving electrodes 65 as shown in Fig. 8(e).
Bonding electrodes 66, which are made of aluminum about 1 jim thick, are formed by vaccum evaporation.
The wafer 61 is diced between holes 64 at the dotted line positions shown in Fig. 8(e) by a universal dicing machine to form individual chips. A chip then is mounted on stand 68 and fastened by conductive glue 69. The chip 67 is assembled and packaged as shown in
Fig. 4B.
In the method shown in Fig. 8, it is easy to manufacture pyroelectric detectors because a substrate 63 made of conductive thick-film paste is directly formed on the pyroelectric crystal wafer 61 without making holes.
In all the embodiments of the method of this invention, pyroelectric crystals such as a crystal of Lira03, are used as elements for detecting infrared rays. Other pyroelectric materials can be used such as triglycine sulphate (TGS), strontium barium niobate (SBN), PbTiO3 and PZT-type ferroelectric ceramics.
Claims (16)
1. A pyroelectric detector comprising: a pyroelectric material; an infrared receiving electrode mounted on one face of said pyroelectric material for receiving infrared rays; and a shield electrode on the other face of said pyroelectric material, the shield electrode being adhesively attached to a substrate made of semiconductive or conductive material which is in turn attached to a support member, the substrate having an aperture beneath the said infrared receiving electrode, which apertures is larger in area than the electrode.
2. A pyroelectric detector as claimed in claim 1 wherein said substrate is made of silicon.
3. A pyroelectric detector as claimed in claim 1, wherein said substrate is made of germanium.
4. A pyroelectric detector as claimed in claim 1 wherein said substrate is made of
GaAs.
5. A pyroelectric detector as claimed in claim 1 wherein said substrate is made of
GaP.
6. A pyroelectric detector as claimed in claim 1 wherein said substrate is made of a metal.
7. A pyroelectric detector as claimed in claim 1 wherein said substrate is made of conductive thick-film paste.
8. A pyroelectric detector as claimed in claim 1 wherein said pyroelectric material is Lira03 crystal.
9. A method of manufacturing pyroelectric detectors comprising the step of:
forming a shield electrode on one face of a wafer of pyroelectric material;
fastening a substrate made of semiconductive material to said one face of the wafer of pyroelectric material by means of conductive adhesive;
grinding the other face of said shield electrode;
making holes in said substrate;
forming infrared receiving electrode for receiving infrared rays on the other face of said wafer of pyroelectric material, each of said infrared receiving electrodes being positioned over one of said holes on said other face of shield electrode; and
dicing said pyroelectric material at positions between said holes.
10. A method of manufacturing pyroelectric detectors as set forther in claim 9 wherein one of Si, Ge, GaAs, or GaP is used as said substrate.
11. A method of manufacturing pyroelectric detectors as set forth in claim 10, wherein holes are made in the substrate by selective etching.
12. A method of manufacturing pyroelectric detectors comprising the steps of:
forming a shield electrode on one face of a wafer of pyroelectric material;
making holes through a substrate made of semiconductor or conductive material;
fastening said substrate to said one face of said wafer of pyroelectric material by conductive adhesive;
grinding the other face of said wafer of pyroelectric material;
forming infrared receiving electrodes for receiving infrared rays on the other face of said wafer of pyroelectric material, each of said infrared receiving electrodes having an area substantially less than the area of each of said holes, each of said infrared receiving electrodes being positioned over one of said holes on said other face; and
dicing said pyroelectric material at positions between said holes.
13. A method of manufacturing pyroelectric detectors set forth in claim 12 wherein one of Si, Ge, GaAs, GaP, or a metal is used as said substrate.
14. A method of manufacturing pyroelectric detectors set forth in claim 13 wherein the step of making holes in the substrate is done by a mechanical process.
15. A method of manufacturing pyroelectric detectors comprising the steps of:
forming a shield electrode on one face of a wafer of pyroelectric material;
forming a conductive thick-film paste on said shield electrode, said thick-film paste having holes therein;
grinding the other face of said wafer of pyroelectric material;
forming infrared receiving electrodes for receiving infrared rays on the other face of each pyroelectric material, each of said infrared receiving electrodes having an area substantially less than the area of each said holes, each of said infrared electrodes being positioned over one of said holes on said other face; and
dicing said pyroelectric material at positions between the holes.
16. A pyroelectric detector substantially as herein described with reference to Fig. 4a or
Fig. 4b, or Fig. 5f or Fig. 6f or Fig. 7 or Fig.
8f of the accompanying drawings.
1 7. A method of manufacturing pyroelectric detectors substantially as herein de scribe.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54122947A JPS6037413B2 (en) | 1979-09-25 | 1979-09-25 | infrared detection device |
| JP3804380A JPS56133632A (en) | 1980-03-25 | 1980-03-25 | Manufacture of infrared-ray detector |
| JP3803580A JPS56133631A (en) | 1980-03-25 | 1980-03-25 | Infrared-ray detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB2061616A true GB2061616A (en) | 1981-05-13 |
| GB2061616B GB2061616B (en) | 1983-09-14 |
Family
ID=27289676
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB8030792A Expired GB2061616B (en) | 1979-09-25 | 1980-09-24 | Pyroelectric detector |
Country Status (3)
| Country | Link |
|---|---|
| CA (1) | CA1175130A (en) |
| DE (1) | DE3035933C2 (en) |
| GB (1) | GB2061616B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0102101A1 (en) * | 1982-07-23 | 1984-03-07 | Philips Electronics Uk Limited | Pyroelectric infra-red radiation detector |
| EP0145457A2 (en) * | 1983-12-09 | 1985-06-19 | Kureha Kagaku Kogyo Kabushiki Kaisha (also called: Kureha Chemical Industry Co. Ltd.) | An infrared sensor |
| GB2152750A (en) * | 1983-08-12 | 1985-08-07 | Standard Telephones Cables Ltd | Infra-red sensor array |
| EP0558766A1 (en) * | 1991-09-24 | 1993-09-08 | Nohmi Bosai Kogyo Kabushiki Kaisha | Pyroelectric element |
| CN112768598A (en) * | 2021-01-27 | 2021-05-07 | 山东大学 | Infrared pyroelectric detector and preparation method thereof |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3413921A1 (en) * | 1984-04-13 | 1985-10-24 | Preh, Elektrofeinmechanische Werke Jakob Preh Nachf. Gmbh & Co, 8740 Bad Neustadt | METHOD FOR PRODUCING AN INFRARED DETECTOR |
| JP3289677B2 (en) * | 1998-05-25 | 2002-06-10 | 株式会社村田製作所 | Infrared sensor |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE376798B (en) * | 1970-05-07 | 1975-06-09 | Western Electric Co | |
| US3707695A (en) * | 1970-10-20 | 1972-12-26 | Matsushita Electric Ind Co Ltd | Infrared intensity detector using a pyroelectric polymer |
| US3801949A (en) * | 1973-03-08 | 1974-04-02 | Rca Corp | Thermal detector and method of making the same |
| US4009516A (en) * | 1976-03-29 | 1977-03-01 | Honeywell Inc. | Pyroelectric detector fabrication |
-
1980
- 1980-09-23 CA CA000360797A patent/CA1175130A/en not_active Expired
- 1980-09-24 GB GB8030792A patent/GB2061616B/en not_active Expired
- 1980-09-24 DE DE3035933A patent/DE3035933C2/en not_active Expired
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0102101A1 (en) * | 1982-07-23 | 1984-03-07 | Philips Electronics Uk Limited | Pyroelectric infra-red radiation detector |
| GB2152750A (en) * | 1983-08-12 | 1985-08-07 | Standard Telephones Cables Ltd | Infra-red sensor array |
| EP0145457A2 (en) * | 1983-12-09 | 1985-06-19 | Kureha Kagaku Kogyo Kabushiki Kaisha (also called: Kureha Chemical Industry Co. Ltd.) | An infrared sensor |
| EP0145457A3 (en) * | 1983-12-09 | 1986-03-12 | Kureha Kagaku Kogyo Kabushiki Kaisha (Also Called: Kureha Chemical Industry Co. Ltd.) | An infrared sensor |
| EP0558766A1 (en) * | 1991-09-24 | 1993-09-08 | Nohmi Bosai Kogyo Kabushiki Kaisha | Pyroelectric element |
| EP0558766A4 (en) * | 1991-09-24 | 1993-11-18 | Nohmi Bosai Kogyo Kabushiki Kaisha | Pyroelectric element |
| US5420426A (en) * | 1991-09-24 | 1995-05-30 | Nohmi Boasai Ltd. | Pyroelectric device |
| CN112768598A (en) * | 2021-01-27 | 2021-05-07 | 山东大学 | Infrared pyroelectric detector and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CA1175130A (en) | 1984-09-25 |
| DE3035933C2 (en) | 1986-04-03 |
| DE3035933A1 (en) | 1981-04-09 |
| GB2061616B (en) | 1983-09-14 |
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| Date | Code | Title | Description |
|---|---|---|---|
| 746 | Register noted 'licences of right' (sect. 46/1977) |
Effective date: 19980915 |
|
| PE20 | Patent expired after termination of 20 years |
Effective date: 20000923 |