JPS56129379A - Solid image-pickup element and manufacture - Google Patents
Solid image-pickup element and manufactureInfo
- Publication number
- JPS56129379A JPS56129379A JP3181280A JP3181280A JPS56129379A JP S56129379 A JPS56129379 A JP S56129379A JP 3181280 A JP3181280 A JP 3181280A JP 3181280 A JP3181280 A JP 3181280A JP S56129379 A JPS56129379 A JP S56129379A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- substrate
- conduit
- oxygen
- solid image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
- H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
- H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3181280A JPS56129379A (en) | 1980-03-12 | 1980-03-12 | Solid image-pickup element and manufacture |
| EP81100992A EP0035146B1 (en) | 1980-02-15 | 1981-02-12 | Semiconductor photoelectric device |
| DE8181100992T DE3176910D1 (en) | 1980-02-15 | 1981-02-12 | Semiconductor photoelectric device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3181280A JPS56129379A (en) | 1980-03-12 | 1980-03-12 | Solid image-pickup element and manufacture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56129379A true JPS56129379A (en) | 1981-10-09 |
| JPS6322075B2 JPS6322075B2 (enExample) | 1988-05-10 |
Family
ID=12341495
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3181280A Granted JPS56129379A (en) | 1980-02-15 | 1980-03-12 | Solid image-pickup element and manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56129379A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58180055A (ja) * | 1981-11-26 | 1983-10-21 | Seiko Epson Corp | イメ−ジセンサ |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5110715A (enExample) * | 1974-07-05 | 1976-01-28 | Hitachi Ltd | |
| JPS51113481A (en) * | 1975-03-28 | 1976-10-06 | Sony Corp | Semiconductor device |
| JPS54103630A (en) * | 1978-02-01 | 1979-08-15 | Matsushita Electric Ind Co Ltd | Solid state pickup device |
| JPS54149489A (en) * | 1978-05-16 | 1979-11-22 | Matsushita Electric Ind Co Ltd | Thin film solar battery |
-
1980
- 1980-03-12 JP JP3181280A patent/JPS56129379A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5110715A (enExample) * | 1974-07-05 | 1976-01-28 | Hitachi Ltd | |
| JPS51113481A (en) * | 1975-03-28 | 1976-10-06 | Sony Corp | Semiconductor device |
| JPS54103630A (en) * | 1978-02-01 | 1979-08-15 | Matsushita Electric Ind Co Ltd | Solid state pickup device |
| JPS54149489A (en) * | 1978-05-16 | 1979-11-22 | Matsushita Electric Ind Co Ltd | Thin film solar battery |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58180055A (ja) * | 1981-11-26 | 1983-10-21 | Seiko Epson Corp | イメ−ジセンサ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6322075B2 (enExample) | 1988-05-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5777021A (en) | Manufacture of amorphous silicon | |
| JPS6417870A (en) | Manufacture of carbon | |
| JPS57167631A (en) | Plasma vapor-phase growing method | |
| JPS56129379A (en) | Solid image-pickup element and manufacture | |
| JPS54104770A (en) | Heat treatment method for 3-5 group compound semiconductor | |
| JPS5756036A (en) | Plasma chemical vapor phase reactor | |
| ES8703534A1 (es) | Perfeccionamientos en un aparato para aplicar un recubrimiento de un primer material sobre un segundo material mediante metalizacion pro bombardeo ionico | |
| JPS56169116A (en) | Manufacture of amorphous silicon film | |
| JPS5681923A (en) | Manufacture of thin film | |
| JPS57202733A (en) | Dry etching device | |
| JPS57192258A (en) | Film forming apparatus using glow discharge | |
| JPS56126982A (en) | Manufacture of photoconductive film | |
| JPS53110378A (en) | Plasma carrying device | |
| JPS577129A (en) | Treating method and device for sputtering | |
| JPS5547381A (en) | Plasma etching method | |
| JPS5742523A (en) | Preparation of amorphous silicon film | |
| JPS5723216A (en) | Manufacture of plasma reactor and semiconductor element | |
| JPS57113214A (en) | Manufacture of amorphous semiconductor film | |
| JPS57153436A (en) | Semiconductor device | |
| JPS5747710A (en) | Formation of amorphous film containing silicon | |
| JPS57187935A (en) | Forming of fine crystalline amorphous silicon film | |
| JPS57198635A (en) | Sputtering method | |
| JPS5772235A (en) | Transparent electrode and production thereof | |
| JPS5766624A (en) | Manufacture of photo conductive amorphous silicon thin film | |
| JPS5574191A (en) | Gas laser tube |