JPS56129339A - Method of manufacturing semiconductor integrated circuit device - Google Patents

Method of manufacturing semiconductor integrated circuit device

Info

Publication number
JPS56129339A
JPS56129339A JP3303580A JP3303580A JPS56129339A JP S56129339 A JPS56129339 A JP S56129339A JP 3303580 A JP3303580 A JP 3303580A JP 3303580 A JP3303580 A JP 3303580A JP S56129339 A JPS56129339 A JP S56129339A
Authority
JP
Japan
Prior art keywords
emitter
integrated circuit
semiconductor integrated
circuit device
manufacturing semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3303580A
Other languages
Japanese (ja)
Inventor
Yusuke Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP3303580A priority Critical patent/JPS56129339A/en
Publication of JPS56129339A publication Critical patent/JPS56129339A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To increase the degree of current amplification by a method wherein an emitter layer of a vertical transistor is formed simultaneously with the diffusion process for one or separation layers at both sides. CONSTITUTION:A p emitter 3a is formed on an n<-> epitaxial layer 2 having been developed on a p<+> type Si substrate 1, simultaneously with p<+> emitters at the upper side. By so doing, the p emitter 3a can be formed to have a sufficient depth and hence to make a base width WB2 smaller, whereby the degree of current amplification for a vertical p-n-p transistor is increased. In addition, the high frequency characteristic is also improved due to the reduced base width.
JP3303580A 1980-03-12 1980-03-12 Method of manufacturing semiconductor integrated circuit device Pending JPS56129339A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3303580A JPS56129339A (en) 1980-03-12 1980-03-12 Method of manufacturing semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3303580A JPS56129339A (en) 1980-03-12 1980-03-12 Method of manufacturing semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS56129339A true JPS56129339A (en) 1981-10-09

Family

ID=12375529

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3303580A Pending JPS56129339A (en) 1980-03-12 1980-03-12 Method of manufacturing semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS56129339A (en)

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