JPS56126961A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56126961A
JPS56126961A JP523681A JP523681A JPS56126961A JP S56126961 A JPS56126961 A JP S56126961A JP 523681 A JP523681 A JP 523681A JP 523681 A JP523681 A JP 523681A JP S56126961 A JPS56126961 A JP S56126961A
Authority
JP
Japan
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP523681A
Other languages
English (en)
Other versions
JPH0158668B2 (ja
Inventor
Richiyaado Kabariea Jiyosefu
Robaato Konian Richiyaado
Tsuongu Hoongu Chiengu
Sutefuan Rapurehito Hansu
Otsutoo Shiyuuenkaa Robaato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS56126961A publication Critical patent/JPS56126961A/ja
Publication of JPH0158668B2 publication Critical patent/JPH0158668B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising semiconducting material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7325—Vertical transistors having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/131—Reactive ion etching rie
JP523681A 1980-03-03 1981-01-19 Semiconductor device Granted JPS56126961A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/126,611 US4338138A (en) 1980-03-03 1980-03-03 Process for fabricating a bipolar transistor

Publications (2)

Publication Number Publication Date
JPS56126961A true JPS56126961A (en) 1981-10-05
JPH0158668B2 JPH0158668B2 (ja) 1989-12-13

Family

ID=22425788

Family Applications (1)

Application Number Title Priority Date Filing Date
JP523681A Granted JPS56126961A (en) 1980-03-03 1981-01-19 Semiconductor device

Country Status (4)

Country Link
US (1) US4338138A (ja)
EP (1) EP0035111B1 (ja)
JP (1) JPS56126961A (ja)
DE (1) DE3172466D1 (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57197833A (en) * 1981-05-29 1982-12-04 Nec Corp Semiconductor device
JPS5835970A (ja) * 1981-08-28 1983-03-02 Fujitsu Ltd 半導体装置の製造方法
JPS5873156A (ja) * 1981-10-28 1983-05-02 Hitachi Ltd 半導体装置
JPS5875870A (ja) * 1981-10-30 1983-05-07 Hitachi Ltd 半導体装置
JPS5940571A (ja) * 1982-08-30 1984-03-06 Hitachi Ltd 半導体装置
JPS6224670A (ja) * 1985-01-30 1987-02-02 テキサス　インスツルメンツ　インコ−ポレイテツド バイポ−ラ・トランジスタとその製法
JPS63146466A (ja) * 1986-07-02 1988-06-18 フエアチヤイルド　セミコンダクタ　コ−ポレ−シヨン ベース・エミッタコンタクト構成体及びその製造方法

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4378630A (en) * 1980-05-05 1983-04-05 International Business Machines Corporation Process for fabricating a high performance PNP and NPN structure
US4419150A (en) * 1980-12-29 1983-12-06 Rockwell International Corporation Method of forming lateral bipolar transistors
JPS57149770A (en) * 1981-03-11 1982-09-16 Mitsubishi Electric Corp Manufacture of semiconductor device
US4491486A (en) * 1981-09-17 1985-01-01 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing a semiconductor device
US4385975A (en) * 1981-12-30 1983-05-31 International Business Machines Corp. Method of forming wide, deep dielectric filled isolation trenches in the surface of a silicon semiconductor substrate
JPS58201362A (ja) * 1982-05-20 1983-11-24 Toshiba Corp 半導体装置の製造方法
JPS58210634A (ja) * 1982-05-31 1983-12-07 Toshiba Corp 半導体装置の製造方法
FR2529714A1 (fr) * 1982-07-01 1984-01-06 Commissariat Energie Atomique Procede de realisation de l'oxyde de champ d'un circuit integre
US4819054A (en) * 1982-09-29 1989-04-04 Hitachi, Ltd. Semiconductor IC with dual groove isolation
US4521952A (en) * 1982-12-02 1985-06-11 International Business Machines Corporation Method of making integrated circuits using metal silicide contacts
JPS6054450A (ja) * 1983-09-05 1985-03-28 Oki Electric Ind Co Ltd 半導体装置の製造方法
EP0147249B1 (en) * 1983-09-19 1989-01-18 Fairchild Semiconductor Corporation Method of manufacturing transistor structures having junctions bound by insulating layers, and resulting structures
JPH0618198B2 (ja) * 1984-02-15 1994-03-09 株式会社日立製作所 半導体装置
EP0177246B1 (en) * 1984-09-29 1988-08-17 Kabushiki Kaisha Toshiba Heterojunction bipolar transistor and method of manufacturing the same
JPH0638478B2 (ja) * 1984-10-22 1994-05-18 株式会社日立製作所 半導体装置
US4703554A (en) * 1985-04-04 1987-11-03 Texas Instruments Incorporated Technique for fabricating a sidewall base contact with extrinsic base-on-insulator
NL8503408A (nl) * 1985-12-11 1987-07-01 Philips Nv Hoogfrequenttransistor en werkwijze ter vervaardiging daarvan.
US4860085A (en) * 1986-06-06 1989-08-22 American Telephone And Telegraph Company, At&T Bell Laboratories Submicron bipolar transistor with buried silicide region
US4782030A (en) * 1986-07-09 1988-11-01 Kabushiki Kaisha Toshiba Method of manufacturing bipolar semiconductor device
GB8621534D0 (en) * 1986-09-08 1986-10-15 British Telecomm Bipolar fabrication process
JPS6379373A (ja) * 1986-09-24 1988-04-09 Hitachi Ltd 半導体装置およびその製造方法
JPS6381855A (ja) * 1986-09-25 1988-04-12 Mitsubishi Electric Corp ヘテロ接合バイポ−ラトランジスタの製造方法
NL8700640A (nl) * 1987-03-18 1988-10-17 Philips Nv Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan.
US4738624A (en) * 1987-04-13 1988-04-19 International Business Machines Corporation Bipolar transistor structure with self-aligned device and isolation and fabrication process therefor
US4916083A (en) * 1987-05-11 1990-04-10 International Business Machines Corporation High performance sidewall emitter transistor
US4847670A (en) * 1987-05-11 1989-07-11 International Business Machines Corporation High performance sidewall emitter transistor
US4818713A (en) * 1987-10-20 1989-04-04 American Telephone And Telegraph Company, At&T Bell Laboratories Techniques useful in fabricating semiconductor devices having submicron features
NL8800157A (nl) * 1988-01-25 1989-08-16 Philips Nv Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan.
US4946798A (en) * 1988-02-09 1990-08-07 Oki Electric Industry Co., Ltd. Semiconductor integrated circuit fabrication method
US4927774A (en) * 1988-06-10 1990-05-22 British Telecommunications Plc Self aligned bipolar fabrication process
JPH0290617A (ja) * 1988-09-28 1990-03-30 Nec Corp 半導体装置の製造方法
GB2230134A (en) * 1989-04-05 1990-10-10 Philips Nv A method of manufacturing a semiconductor device
EP0418421B1 (de) * 1989-09-22 1998-08-12 Siemens Aktiengesellschaft Verfahren zur Herstellung eines Bipolartransistors mit verminderter Basis/Kollektor-Kapazität
EP0476308B1 (de) * 1990-09-20 1997-03-12 Siemens Aktiengesellschaft Bipolartransistor für hohe Leistung im Mikrowellenlängenbereich
US5631495A (en) * 1994-11-29 1997-05-20 International Business Machines Corporation High performance bipolar devices with plurality of base contact regions formed around the emitter layer
FR2756100B1 (fr) * 1996-11-19 1999-02-12 Sgs Thomson Microelectronics Transistor bipolaire a emetteur inhomogene dans un circuit integre bicmos
FR2756103B1 (fr) * 1996-11-19 1999-05-14 Sgs Thomson Microelectronics Fabrication de circuits integres bipolaires/cmos et d'un condensateur
FR2756974B1 (fr) * 1996-12-10 1999-06-04 Sgs Thomson Microelectronics Transistor bipolaire a isolement par caisson
US5814547A (en) * 1997-10-06 1998-09-29 Industrial Technology Research Institute Forming different depth trenches simultaneously by microloading effect
JP2001308106A (ja) * 2000-04-27 2001-11-02 Mitsubishi Electric Corp 半導体装置およびその製造方法
US6617220B2 (en) 2001-03-16 2003-09-09 International Business Machines Corporation Method for fabricating an epitaxial base bipolar transistor with raised extrinsic base
WO2004095564A1 (en) * 2003-04-24 2004-11-04 Koninklijke Philips Electronics N.V. Method of manufacturing a semiconductor device with a bipolar transistor
GB0507157D0 (en) * 2005-04-08 2005-05-18 Ami Semiconductor Belgium Bvba Double trench for isolation of semiconductor devices
US8932931B2 (en) 2012-02-13 2015-01-13 International Business Machines Corporation Self-aligned emitter-base region
US10593771B2 (en) * 2017-12-11 2020-03-17 International Business Machines Corporation Vertical fin-type bipolar junction transistor with self-aligned base contact

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52103971A (en) * 1976-02-26 1977-08-31 Nec Corp Semiconductor device
JPS5328384A (en) * 1976-08-27 1978-03-16 Fujitsu Ltd Production method of semiconductor device
JPS5667765U (ja) * 1979-10-29 1981-06-05
JPS625349A (ja) * 1985-07-02 1987-01-12 株式会社新素材総合研究所 液体容器

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US3655457A (en) * 1968-08-06 1972-04-11 Ibm Method of making or modifying a pn-junction by ion implantation
US3574008A (en) * 1968-08-19 1971-04-06 Trw Semiconductors Inc Mushroom epitaxial growth in tier-type shaped holes
US3796613A (en) * 1971-06-18 1974-03-12 Ibm Method of forming dielectric isolation for high density pedestal semiconductor devices
US3975221A (en) * 1973-08-29 1976-08-17 American Micro-Systems, Inc. Low capacitance V groove MOS NOR gate and method of manufacture
JPS51128269A (en) * 1975-04-30 1976-11-09 Sony Corp Semiconductor unit
US4048649A (en) * 1976-02-06 1977-09-13 Transitron Electronic Corporation Superintegrated v-groove isolated bipolar and vmos transistors
US4047217A (en) * 1976-04-12 1977-09-06 Fairchild Camera And Instrument Corporation High-gain, high-voltage transistor for linear integrated circuits
US4115797A (en) * 1976-10-04 1978-09-19 Fairchild Camera And Instrument Corporation Integrated injection logic with heavily doped injector base self-aligned with injector emitter and collector
US4104086A (en) * 1977-08-15 1978-08-01 International Business Machines Corporation Method for forming isolated regions of silicon utilizing reactive ion etching
US4139442A (en) * 1977-09-13 1979-02-13 International Business Machines Corporation Reactive ion etching method for producing deep dielectric isolation in silicon
JPS54128683A (en) * 1978-03-27 1979-10-05 Ibm Method of fabricating emitterrbase matching bipolar transistor
US4157269A (en) * 1978-06-06 1979-06-05 International Business Machines Corporation Utilizing polysilicon diffusion sources and special masking techniques
US4242791A (en) * 1979-09-21 1981-01-06 International Business Machines Corporation High performance bipolar transistors fabricated by post emitter base implantation process
US4252582A (en) * 1980-01-25 1981-02-24 International Business Machines Corporation Self aligned method for making bipolar transistor having minimum base to emitter contact spacing

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52103971A (en) * 1976-02-26 1977-08-31 Nec Corp Semiconductor device
JPS5328384A (en) * 1976-08-27 1978-03-16 Fujitsu Ltd Production method of semiconductor device
JPS5667765U (ja) * 1979-10-29 1981-06-05
JPS625349A (ja) * 1985-07-02 1987-01-12 株式会社新素材総合研究所 液体容器

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57197833A (en) * 1981-05-29 1982-12-04 Nec Corp Semiconductor device
JPS5835970A (ja) * 1981-08-28 1983-03-02 Fujitsu Ltd 半導体装置の製造方法
JPH0126185B2 (ja) * 1981-08-28 1989-05-22 Fujitsu Ltd
JPS5873156A (ja) * 1981-10-28 1983-05-02 Hitachi Ltd 半導体装置
JPS5875870A (ja) * 1981-10-30 1983-05-07 Hitachi Ltd 半導体装置
JPS5940571A (ja) * 1982-08-30 1984-03-06 Hitachi Ltd 半導体装置
JPS6224670A (ja) * 1985-01-30 1987-02-02 テキサス　インスツルメンツ　インコ−ポレイテツド バイポ−ラ・トランジスタとその製法
JPS63146466A (ja) * 1986-07-02 1988-06-18 フエアチヤイルド　セミコンダクタ　コ−ポレ−シヨン ベース・エミッタコンタクト構成体及びその製造方法

Also Published As

Publication number Publication date
JPH0158668B2 (ja) 1989-12-13
EP0035111A2 (en) 1981-09-09
EP0035111B1 (en) 1985-10-02
EP0035111A3 (en) 1982-08-25
US4338138A (en) 1982-07-06
DE3172466D1 (en) 1985-11-07

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