JPS56124263A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56124263A
JPS56124263A JP2663880A JP2663880A JPS56124263A JP S56124263 A JPS56124263 A JP S56124263A JP 2663880 A JP2663880 A JP 2663880A JP 2663880 A JP2663880 A JP 2663880A JP S56124263 A JPS56124263 A JP S56124263A
Authority
JP
Japan
Prior art keywords
type
layer
electrodes
cathode
exposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2663880A
Other languages
English (en)
Japanese (ja)
Other versions
JPS639670B2 (enrdf_load_stackoverflow
Inventor
Tokuo Watanabe
Masami Naito
Tsutomu Yao
Masahiro Okamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2663880A priority Critical patent/JPS56124263A/ja
Priority to US06/164,946 priority patent/US4388635A/en
Priority to DE3024939A priority patent/DE3024939C3/de
Publication of JPS56124263A publication Critical patent/JPS56124263A/ja
Publication of JPS639670B2 publication Critical patent/JPS639670B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/118—Electrodes comprising insulating layers having particular dielectric or electrostatic properties, e.g. having static charges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers

Landscapes

  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
JP2663880A 1979-07-02 1980-03-05 Semiconductor device Granted JPS56124263A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2663880A JPS56124263A (en) 1980-03-05 1980-03-05 Semiconductor device
US06/164,946 US4388635A (en) 1979-07-02 1980-07-01 High breakdown voltage semiconductor device
DE3024939A DE3024939C3 (de) 1979-07-02 1980-07-01 Halbleiteranordnung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2663880A JPS56124263A (en) 1980-03-05 1980-03-05 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS56124263A true JPS56124263A (en) 1981-09-29
JPS639670B2 JPS639670B2 (enrdf_load_stackoverflow) 1988-03-01

Family

ID=12198982

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2663880A Granted JPS56124263A (en) 1979-07-02 1980-03-05 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56124263A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4561977A (en) * 1983-03-08 1985-12-31 Nissan Motor Company, Limited Contractible fuel filter device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH076841U (ja) * 1993-06-23 1995-01-31 株式会社三協精機製作所 磁気・ｉｃ兼用カ−ドリ−ダ
US8872751B2 (en) 2009-03-26 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device having interconnected transistors and electronic device including the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4561977A (en) * 1983-03-08 1985-12-31 Nissan Motor Company, Limited Contractible fuel filter device

Also Published As

Publication number Publication date
JPS639670B2 (enrdf_load_stackoverflow) 1988-03-01

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