JPS56124232A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56124232A
JPS56124232A JP2753880A JP2753880A JPS56124232A JP S56124232 A JPS56124232 A JP S56124232A JP 2753880 A JP2753880 A JP 2753880A JP 2753880 A JP2753880 A JP 2753880A JP S56124232 A JPS56124232 A JP S56124232A
Authority
JP
Japan
Prior art keywords
film
si3n4
electrode
substrate
sio2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2753880A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6226574B2 (enExample
Inventor
Yasumi Hamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2753880A priority Critical patent/JPS56124232A/ja
Publication of JPS56124232A publication Critical patent/JPS56124232A/ja
Publication of JPS6226574B2 publication Critical patent/JPS6226574B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W20/069—

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP2753880A 1980-03-05 1980-03-05 Manufacture of semiconductor device Granted JPS56124232A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2753880A JPS56124232A (en) 1980-03-05 1980-03-05 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2753880A JPS56124232A (en) 1980-03-05 1980-03-05 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56124232A true JPS56124232A (en) 1981-09-29
JPS6226574B2 JPS6226574B2 (enExample) 1987-06-09

Family

ID=12223863

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2753880A Granted JPS56124232A (en) 1980-03-05 1980-03-05 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56124232A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2579826A1 (fr) * 1985-03-26 1986-10-03 Radiotechnique Compelec Procede de realisation de contacts metalliques d'un transistor, et transistor ainsi obtenu

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2579826A1 (fr) * 1985-03-26 1986-10-03 Radiotechnique Compelec Procede de realisation de contacts metalliques d'un transistor, et transistor ainsi obtenu

Also Published As

Publication number Publication date
JPS6226574B2 (enExample) 1987-06-09

Similar Documents

Publication Publication Date Title
DE59611419D1 (de) Solarzelle mit back-surface-field und verfahren zur herstellung
JPS56124232A (en) Manufacture of semiconductor device
JPS5583229A (en) Producing semiconductor device
JPS61240638A (ja) 半導体装置の製法
JPS5558526A (en) Manufacture of semiconductor device
JPS52124860A (en) Electrode formation method for semiconductor devices
JPS57138162A (en) Manufacture of semiconductor device
JPS53129981A (en) Production of semiconductor device
JPS56103425A (en) Improving method for semiconductor substrate
JPS52116170A (en) Selective etching method of platinum thin film
JPS5715423A (en) Manufacture of semiconductor device
JPS5776832A (en) Method for forming palladium silicide
JPS5421264A (en) Forming method of semiconductor surface magnetization
JPS538083A (en) Production of semiconductor device
JPS5270752A (en) Manufacture of semiconductor device
JPS51147250A (en) Treatment method of semiconductor substrate
Ugai The chemical etching of some element-containing silicate films on silicon
JPS55115330A (en) Manufacturing method of semiconductor device
JPS55111129A (en) Manufacturing method of semiconductor device
JPS5566113A (en) Manufacture of elastic surface wave device
JPS57114278A (en) Manufacture of semiconductor device
JPS5635435A (en) Manufacturing of semiconductor device
JPS56148825A (en) Manufacture of semiconductor device
JPS56160077A (en) Solar battery
JPS5210673A (en) Manufacturing method of silicon semi-conductor device