JPS56124232A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS56124232A JPS56124232A JP2753880A JP2753880A JPS56124232A JP S56124232 A JPS56124232 A JP S56124232A JP 2753880 A JP2753880 A JP 2753880A JP 2753880 A JP2753880 A JP 2753880A JP S56124232 A JPS56124232 A JP S56124232A
- Authority
- JP
- Japan
- Prior art keywords
- film
- si3n4
- electrode
- substrate
- sio2
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 4
- 230000015572 biosynthetic process Effects 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 230000001070 adhesive effect Effects 0.000 abstract 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 1
- 229910018885 Pt—Au Inorganic materials 0.000 abstract 1
- XRZCZVQJHOCRCR-UHFFFAOYSA-N [Si].[Pt] Chemical compound [Si].[Pt] XRZCZVQJHOCRCR-UHFFFAOYSA-N 0.000 abstract 1
- 239000000853 adhesive Substances 0.000 abstract 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229960002050 hydrofluoric acid Drugs 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 239000012808 vapor phase Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2753880A JPS56124232A (en) | 1980-03-05 | 1980-03-05 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2753880A JPS56124232A (en) | 1980-03-05 | 1980-03-05 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56124232A true JPS56124232A (en) | 1981-09-29 |
| JPS6226574B2 JPS6226574B2 (enExample) | 1987-06-09 |
Family
ID=12223863
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2753880A Granted JPS56124232A (en) | 1980-03-05 | 1980-03-05 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56124232A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2579826A1 (fr) * | 1985-03-26 | 1986-10-03 | Radiotechnique Compelec | Procede de realisation de contacts metalliques d'un transistor, et transistor ainsi obtenu |
-
1980
- 1980-03-05 JP JP2753880A patent/JPS56124232A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2579826A1 (fr) * | 1985-03-26 | 1986-10-03 | Radiotechnique Compelec | Procede de realisation de contacts metalliques d'un transistor, et transistor ainsi obtenu |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6226574B2 (enExample) | 1987-06-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ATE354867T1 (de) | Solarzelle mit back-surface-field und verfahren zur herstellung | |
| JPS56124232A (en) | Manufacture of semiconductor device | |
| JPS5583229A (en) | Producing semiconductor device | |
| JPS52124860A (en) | Electrode formation method for semiconductor devices | |
| JPS57138162A (en) | Manufacture of semiconductor device | |
| JPS53129981A (en) | Production of semiconductor device | |
| JPS56103425A (en) | Improving method for semiconductor substrate | |
| JPS54159186A (en) | Semiconductor device | |
| JPS5339873A (en) | Etching method of silicon semiconductor substrate containing gold | |
| JPS5715423A (en) | Manufacture of semiconductor device | |
| JPS5735368A (en) | Manufacture of semiconductor device | |
| JPS5776832A (en) | Method for forming palladium silicide | |
| JPS51147250A (en) | Treatment method of semiconductor substrate | |
| Ugai | The Chemical Etching of Some Element-Containing Silicate Films on Silicon | |
| JPS55115330A (en) | Manufacturing method of semiconductor device | |
| JPS5357776A (en) | Formation method of silicon oxide film | |
| JPS55111129A (en) | Manufacturing method of semiconductor device | |
| JPS53132279A (en) | Production of semiconductor device | |
| JPS5566113A (en) | Manufacture of elastic surface wave device | |
| JPS5635435A (en) | Manufacturing of semiconductor device | |
| JPS5526669A (en) | Manufacturing semiconductor device | |
| JPS5210673A (en) | Manufacturing method of silicon semi-conductor device | |
| JPS5325350A (en) | Dicing method of semiconductor substrates | |
| JPS56161640A (en) | Semiconductor diffusion method | |
| JPS5491053A (en) | Manufacture of semiconductor device |