JPS56120182A - Modulation system of light pumping semiconductor laser - Google Patents

Modulation system of light pumping semiconductor laser

Info

Publication number
JPS56120182A
JPS56120182A JP2292280A JP2292280A JPS56120182A JP S56120182 A JPS56120182 A JP S56120182A JP 2292280 A JP2292280 A JP 2292280A JP 2292280 A JP2292280 A JP 2292280A JP S56120182 A JPS56120182 A JP S56120182A
Authority
JP
Japan
Prior art keywords
high speed
pumping
film
laser
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2292280A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6257116B2 (enrdf_load_stackoverflow
Inventor
Takashi Andou
Masashi Yamaguchi
Zeio Kamimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP2292280A priority Critical patent/JPS56120182A/ja
Publication of JPS56120182A publication Critical patent/JPS56120182A/ja
Publication of JPS6257116B2 publication Critical patent/JPS6257116B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0608—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/3004—Structure or shape of the active region; Materials used for the active region employing a field effect structure for inducing charge-carriers, e.g. FET
    • H01S5/3009—MIS or MOS conffigurations

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2292280A 1980-02-26 1980-02-26 Modulation system of light pumping semiconductor laser Granted JPS56120182A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2292280A JPS56120182A (en) 1980-02-26 1980-02-26 Modulation system of light pumping semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2292280A JPS56120182A (en) 1980-02-26 1980-02-26 Modulation system of light pumping semiconductor laser

Publications (2)

Publication Number Publication Date
JPS56120182A true JPS56120182A (en) 1981-09-21
JPS6257116B2 JPS6257116B2 (enrdf_load_stackoverflow) 1987-11-30

Family

ID=12096130

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2292280A Granted JPS56120182A (en) 1980-02-26 1980-02-26 Modulation system of light pumping semiconductor laser

Country Status (1)

Country Link
JP (1) JPS56120182A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996024972A1 (en) * 1995-02-07 1996-08-15 British Technology Group Limited A semiconductor laser
WO1997045903A3 (en) * 1996-05-24 2003-09-04 British Tech Group A semiconductor laser

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62162620U (enrdf_load_stackoverflow) * 1986-04-04 1987-10-16

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4879588A (enrdf_load_stackoverflow) * 1972-01-25 1973-10-25

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4879588A (enrdf_load_stackoverflow) * 1972-01-25 1973-10-25

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996024972A1 (en) * 1995-02-07 1996-08-15 British Technology Group Limited A semiconductor laser
WO1997045903A3 (en) * 1996-05-24 2003-09-04 British Tech Group A semiconductor laser

Also Published As

Publication number Publication date
JPS6257116B2 (enrdf_load_stackoverflow) 1987-11-30

Similar Documents

Publication Publication Date Title
KR880004612A (ko) 고체 레이저
EP0215125A4 (en) LIGHT EMITTING ELEMENT WITH SEMICONDUCTORS.
JPS56120182A (en) Modulation system of light pumping semiconductor laser
JPS553215A (en) Semiconductor switch circuit
ATE29345T1 (de) Vorrichtung zur erzeugung von kohaerenter strahlung.
JPS56147494A (en) Semiconductor laser driving circuit
EP0259878A3 (en) Electron emission element
KR940016606A (ko) 광게이트를 갖는 진공 트랜지스터 및 그 제조방법
JPS56152289A (en) Stripe type semiconductor laser with gate electrode
JPS574180A (en) Light-emitting element in gallium nitride
SE7905052L (sv) Effekttyristor, forfarande for dess framstellning samt anvendning av sadana tyristorer i stromriktarkopplingar
JPS561590A (en) Method of modulating semiconductor laser at high speed
JPS6461084A (en) Semiconductor laser
JPS577984A (en) Semiconductor light emitting device
JPS5373984A (en) Semiconductor laser and its driving method
RU1804667C (ru) Фотонно-инжекционный тиристор
JPS5766685A (en) Rib structure semiconductor laser
JPS57211789A (en) Driving method for diode laser
KR950021733A (ko) 박막형 광게이트를 이용한 트랜지스터 구조
JPS5776884A (en) Driving circuit of semiconductor light emitter
SU1054846A1 (ru) Способ получени автоэлектронной эмиссии
JPS5681992A (en) Laser diode
JPS6414963A (en) Pnpn semiconductor element
JPS55153385A (en) Current squeezing type semiconductor device
JPS6465890A (en) Driving circuit of semiconductor laser