ATE29345T1 - Vorrichtung zur erzeugung von kohaerenter strahlung. - Google Patents

Vorrichtung zur erzeugung von kohaerenter strahlung.

Info

Publication number
ATE29345T1
ATE29345T1 AT84200222T AT84200222T ATE29345T1 AT E29345 T1 ATE29345 T1 AT E29345T1 AT 84200222 T AT84200222 T AT 84200222T AT 84200222 T AT84200222 T AT 84200222T AT E29345 T1 ATE29345 T1 AT E29345T1
Authority
AT
Austria
Prior art keywords
materials
laser
iii
radiation
population inversion
Prior art date
Application number
AT84200222T
Other languages
English (en)
Inventor
Joachim Hermann Wolter
Robert Edward Horstman
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of ATE29345T1 publication Critical patent/ATE29345T1/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02Main electrodes
    • H01J1/30Cold cathodes, e.g. field-emissive cathode
    • H01J1/308Semiconductor cathodes, e.g. cathodes with PN junction layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09Processes or apparatus for excitation, e.g. pumping
    • H01S3/0955Processes or apparatus for excitation, e.g. pumping using pumping by high energy particles
    • H01S3/0959Processes or apparatus for excitation, e.g. pumping using pumping by high energy particles by an electron beam

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Glass Compositions (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
AT84200222T 1983-02-21 1984-02-20 Vorrichtung zur erzeugung von kohaerenter strahlung. ATE29345T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8300631A NL8300631A (nl) 1983-02-21 1983-02-21 Inrichting voor het opwekken van coherente straling.
EP84200222A EP0119646B1 (de) 1983-02-21 1984-02-20 Vorrichtung zur Erzeugung von kohärenter Strahlung

Publications (1)

Publication Number Publication Date
ATE29345T1 true ATE29345T1 (de) 1987-09-15

Family

ID=19841445

Family Applications (1)

Application Number Title Priority Date Filing Date
AT84200222T ATE29345T1 (de) 1983-02-21 1984-02-20 Vorrichtung zur erzeugung von kohaerenter strahlung.

Country Status (8)

Country Link
US (1) US4631731A (de)
EP (1) EP0119646B1 (de)
JP (1) JPS59161891A (de)
AT (1) ATE29345T1 (de)
AU (1) AU571488B2 (de)
CA (1) CA1257676A (de)
DE (1) DE3465843D1 (de)
NL (1) NL8300631A (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8400632A (nl) * 1984-02-29 1985-09-16 Philips Nv Inrichting voor het opwekken van elektromagnetische straling.
DE3538175C2 (de) * 1984-11-21 1996-06-05 Philips Electronics Nv Halbleiteranordnung zum Erzeugen eines Elektronenstromes und ihre Verwendung
NL8701497A (nl) * 1987-06-26 1989-01-16 Philips Nv Halfgeleiderinrichting voor het opwekken van electromagnetische straling.
US4894832A (en) * 1988-09-15 1990-01-16 North American Philips Corporation Wide band gap semiconductor light emitting devices
JP2548352B2 (ja) * 1989-01-17 1996-10-30 松下電器産業株式会社 発光素子およびその製造方法
FR2661566B1 (fr) * 1990-04-25 1995-03-31 Commissariat Energie Atomique Laser compact a semi-conducteur du type a pompage electronique.
FR2690005B1 (fr) * 1992-04-10 1994-05-20 Commissariat A Energie Atomique Canon a electrons compact comportant une source d'electrons a micropointes et laser a semi-conducteur utilisant ce canon pour le pompage electronique.
JPH06104533A (ja) * 1992-09-22 1994-04-15 Matsushita Electric Ind Co Ltd 青色発光素子およびその製造方法
US5513198A (en) * 1993-07-14 1996-04-30 Corning Incorporated Packaging of high power semiconductor lasers

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3393373A (en) * 1963-07-11 1968-07-16 Stimler Morton Electron stimulated optical maser
US3655986A (en) * 1964-10-20 1972-04-11 Massachusetts Inst Technology Laser device
US3575627A (en) * 1967-12-29 1971-04-20 Rca Corp Cathode-ray tube with screen comprising laser crystals
US3715162A (en) * 1971-04-19 1973-02-06 Minnesota Mining & Mfg Free exciton indirect transition laser
JPS4862392A (de) * 1971-12-06 1973-08-31
US3821773A (en) * 1972-01-24 1974-06-28 Beta Ind Inc Solid state emitting device and method of producing the same
JPS5110074A (ja) * 1974-07-10 1976-01-27 Iichiro Matsumoto Kokuruiseifunho
US3942132A (en) * 1974-09-06 1976-03-02 The United States Of America As Represented By The Secretary Of The Army Combined electron beam semiconductor modulator and junction laser
NL7901122A (nl) * 1979-02-13 1980-08-15 Philips Nv Halfgeleiderlaser en werkwijze ter vervaardiging daarvan.
NL184589C (nl) * 1979-07-13 1989-09-01 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenbundel en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting.

Also Published As

Publication number Publication date
AU2473884A (en) 1984-08-30
DE3465843D1 (en) 1987-10-08
US4631731A (en) 1986-12-23
JPS59161891A (ja) 1984-09-12
NL8300631A (nl) 1984-09-17
AU571488B2 (en) 1988-04-21
EP0119646B1 (de) 1987-09-02
CA1257676A (en) 1989-07-18
EP0119646A1 (de) 1984-09-26

Similar Documents

Publication Publication Date Title
SE8101263L (sv) Vertikal mosfet-anordning
JPS52109884A (en) Stripe type hetero junction semoonductor laser
ES8106631A1 (es) Un metodo de fabricar un dispositivo semiconductor para ge- nerar un haz de electrones
US2936425A (en) Semiconductor amplifying device
JPS57152178A (en) Semiconductor light emitting device with super lattice structure
ATE29345T1 (de) Vorrichtung zur erzeugung von kohaerenter strahlung.
Maerfeld et al. BLEUSTEIN‐GULYAEV SURFACE WAVE AMPLIFICATION IN CdS
US3248669A (en) Semiconductor laser with optical cavity
US3447044A (en) Scanned line radiation source using a reverse biased p-n junction adjacent a gunn diode
US3281714A (en) Injection laser using minority carrier injection by tunneling
JPS5726464A (en) High frequency and high power bipolar transistor
JPS5412683A (en) Semiconductor device
JPS57167688A (en) Multiwavelength light-emitting and light-receiving element
GB1535061A (en) Gallium arsenide photocathode
JPS5447468A (en) Pulse signal control circuit
JPS5636186A (en) Stripe structure of semiconductor laser element and manufacture of said structure
JPS56100488A (en) Semiconductor laser device
JPS57143871A (en) Semiconductor device for amplifying high frequency
JPS5398790A (en) Semiconductor light emitting element
JPS647583A (en) Light amplifier
JPS54107281A (en) Semiconductor laser device
JPS57139969A (en) Semiconductor device for high frequency amplification
JPS56111279A (en) Luminous semiconductor device
ATE104098T1 (de) Gittergesteuerte roehre mit besserem wirkungsgrad.
JPS54125990A (en) Stripe structure of semiconductor laser element

Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee