WO1997045903A3 - A semiconductor laser - Google Patents

A semiconductor laser Download PDF

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Publication number
WO1997045903A3
WO1997045903A3 PCT/GB1997/001436 GB9701436W WO9745903A3 WO 1997045903 A3 WO1997045903 A3 WO 1997045903A3 GB 9701436 W GB9701436 W GB 9701436W WO 9745903 A3 WO9745903 A3 WO 9745903A3
Authority
WO
WIPO (PCT)
Prior art keywords
nitride
indium gallium
layer
gallium nitride
semiconductor laser
Prior art date
Application number
PCT/GB1997/001436
Other languages
French (fr)
Other versions
WO1997045903A2 (en
Inventor
Gregory Jason Parker
Original Assignee
British Tech Group
Gregory Jason Parker
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by British Tech Group, Gregory Jason Parker filed Critical British Tech Group
Priority to EP97923262A priority Critical patent/EP0901697A3/en
Priority to JP54184997A priority patent/JP2002516029A/en
Publication of WO1997045903A2 publication Critical patent/WO1997045903A2/en
Publication of WO1997045903A3 publication Critical patent/WO1997045903A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18391—Aperiodic structuring to influence the near- or far-field distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/3004—Structure or shape of the active region; Materials used for the active region employing a field effect structure for inducing charge-carriers, e.g. FET
    • H01S5/3009—MIS or MOS conffigurations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

The invention is a semiconductor laser (10) having a 3-5 nitride material as a lasing medium. An example of such a 3-5 nitride material is Indium Gallium Nitride. The invention overcomes problems of existing short lived, broadband lasers in which it was not possible to reliably dope 3-5 nitrides, both p- and n- type and relies upon the phenomenon of a relatively large band gap (6.28 eV) which is present in an Aluminium Nitride buffer layer (18). The atomic lattice structure of Aluminium Nitride layer (18) and Indium Gallium Nitride (16) are such that lasing can be made to occur with an Indium Gallium Nitride layer (16) which is supported on a sapphire substrate (20). Use of Aluminium NItride avoids lattice mismatch. In a preferred embodiment Fresnel reflectors may be incorporated in an additional layer as holes or perforations (30).
PCT/GB1997/001436 1996-05-24 1997-05-27 A semiconductor laser WO1997045903A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP97923262A EP0901697A3 (en) 1996-05-24 1997-05-27 Semiconductor laser
JP54184997A JP2002516029A (en) 1996-05-24 1997-05-27 Semiconductor laser

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9610928.5 1996-05-24
GBGB9610928.5A GB9610928D0 (en) 1996-05-24 1996-05-24 A semiconductor laser

Publications (2)

Publication Number Publication Date
WO1997045903A2 WO1997045903A2 (en) 1997-12-04
WO1997045903A3 true WO1997045903A3 (en) 2003-09-04

Family

ID=10794273

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB1997/001436 WO1997045903A2 (en) 1996-05-24 1997-05-27 A semiconductor laser

Country Status (4)

Country Link
EP (1) EP0901697A3 (en)
JP (1) JP2002516029A (en)
GB (1) GB9610928D0 (en)
WO (1) WO1997045903A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002067334A1 (en) * 2001-02-20 2002-08-29 University Of Maryland, Baltimore County Multiple quantum well broad spectrum gain medium and method for forming same
US6944197B2 (en) 2001-06-26 2005-09-13 University Of Maryland, Baltimore County Low crosstalk optical gain medium and method for forming same
CN109038214B (en) * 2018-07-26 2020-01-03 华中科技大学 Vertical cavity surface emitting laser based on super surface and manufacturing method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56120182A (en) * 1980-02-26 1981-09-21 Nippon Telegr & Teleph Corp <Ntt> Modulation system of light pumping semiconductor laser
JPS6338271A (en) * 1986-08-04 1988-02-18 Sharp Corp Semiconductor surface light emitting element
WO1996024972A1 (en) * 1995-02-07 1996-08-15 British Technology Group Limited A semiconductor laser

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56120182A (en) * 1980-02-26 1981-09-21 Nippon Telegr & Teleph Corp <Ntt> Modulation system of light pumping semiconductor laser
JPS6338271A (en) * 1986-08-04 1988-02-18 Sharp Corp Semiconductor surface light emitting element
WO1996024972A1 (en) * 1995-02-07 1996-08-15 British Technology Group Limited A semiconductor laser

Non-Patent Citations (7)

* Cited by examiner, † Cited by third party
Title
AMANO H ET AL: "ROOM-TEMPERATURE VIOLET STIMULATED EMISSION FROM OPTICALLY PUMPED ALGAN/GAINN DOUBLE HETEROSTRUCTURE", APPLIED PHYSICS LETTERS, vol. 64, no. 11, 14 March 1994 (1994-03-14), pages 1377 - 1379, XP000434301 *
F.C. JAIN ET AL: "ZnSe-ZnSSe and ZnSe-ZnSeZnMnSe metal insulator semiconductor lasers", JOURNAL OF CRYSTAL GROWTH., vol. 86, no. 1-4, January 1988 (1988-01-01), AMSTERDAM NL, pages 929 - 934, XP002039037 *
HIROSHI AMANO ET AL: "STIMULATED EMISSION NEAR ULTRAVIOLET AT ROOM TEMPERATURE FROM A GAN FILM GROWN ON SAPPHIRE BY MOVPE USING AN AIN BUFFER LAYER", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 29, no. 2, PART 02, 1 February 1990 (1990-02-01), pages L205/206, XP000116880 *
KAMEDA S ET AL: "ANALYSIS OF PROPOSED MIS LASER STRUCTURES", IEEE JOURNAL OF QUANTUM ELECTRONICS, vol. 9, no. 2, 1 February 1973 (1973-02-01), pages 374 - 378, XP000565162 *
MATIN M A ET AL: "OPTICALLY TRANSPARENT INDIUM-TIN-OXIDE (ITO) OHMIC CONTACTS IN THE FABRICATION OF VERTICAL-CAVITY SURFACE-EMITTING LASERS", ELECTRONICS LETTERS, vol. 30, no. 4, 17 February 1994 (1994-02-17), pages 318 - 320, XP000439519 *
PATENT ABSTRACTS OF JAPAN vol. 005, no. 198 (E - 087) 16 December 1981 (1981-12-16) *
PATENT ABSTRACTS OF JAPAN vol. 012, no. 250 (E - 633) 14 July 1988 (1988-07-14) *

Also Published As

Publication number Publication date
WO1997045903A2 (en) 1997-12-04
EP0901697A3 (en) 2003-10-22
GB9610928D0 (en) 1996-07-31
EP0901697A2 (en) 1999-03-17
JP2002516029A (en) 2002-05-28

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