KR880004612A - 고체 레이저 - Google Patents

고체 레이저 Download PDF

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Publication number
KR880004612A
KR880004612A KR870010519A KR870010519A KR880004612A KR 880004612 A KR880004612 A KR 880004612A KR 870010519 A KR870010519 A KR 870010519A KR 870010519 A KR870010519 A KR 870010519A KR 880004612 A KR880004612 A KR 880004612A
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KR
South Korea
Prior art keywords
solid state
state laser
semiconductor material
group
active layer
Prior art date
Application number
KR870010519A
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English (en)
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KR910009909B1 (ko
Inventor
짱 원-티엔
Original Assignee
엘리 와이스
아메리칸 텔리폰 앤드 텔레그라크 캄파니
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Publication of KR880004612A publication Critical patent/KR880004612A/ko
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Publication of KR910009909B1 publication Critical patent/KR910009909B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1608—Solid materials characterised by an active (lasing) ion rare earth erbium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1628—Solid materials characterised by a semiconducting matrix
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3068—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure deep levels
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S372/00—Coherent light generators
    • Y10S372/704—Summary reference

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

내용 없음

Description

고체 레이저
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따라 구성된 반도체 레이저의도시도.
제4도 내지 5도는 에너지 다이어그램, 광학 이득 도면 및 본 발명의 작동을 설명하는데 유용한 다른 곡선도.

Claims (9)

  1. 파브리-페로트 공동에 배치되었으며, 가전자 대역과 전도 대역 사이의 대역 간격을 갖는 반도체 물질의 활성층을 포함하며, 상기 반도체 활성층을 전기적으로 펌핑하기 위한 레이저 전극을 포함하는 고체 레이저에 있어서, 상기 반도체 활성층(103)은 지배적인 방사 파장을 갖는 회토류 첨가제를 포함하며, 상기 반도체 물질은, 상기 대역간격이 상기 회토류 첨가제의 상기 방사 파장보다 긴 파장에 대응되도록 선택되는 것을 특징으로 하는 고체 레이저
  2. 제1항에 있어서, 상기 반도체 물질은, 그 원소가 원소 주기율표의 Ⅲ 과 Ⅴ 족으로부터 선택되는 합성물인 것을 특징으로 하는 고체 레이저.
  3. 제2항에 있어서, 상기 반도체 물질의 원소는 갈륨, 인듐, 알루미늄, 아세닉, 안티모니 및 인을 구성하는 그룹으로부터의 원소인 것을 특징으로 하는 고체 레이저.
  4. 제3항에 있어서, 상기 회토류 이온이 에르븀인 것을 특징으로 하는 고체 레이저.
  5. 제1항에 있어서, 상기 반도체 물질은, 그 원소가 원소 주기율표의 Ⅱ 및 Ⅵ 족으로부터 선택된 합성물인 것을 특징으로 하는 고체 레이저.
  6. 제5항에 있어서, 상기 반도체 물질의 원소가 아연, 카드뮴, 수은, 설퍼, 셀레늄 및 텔레루륨으로 구성된 그룹의 원소인 것을 특징으로 하는 고체 레이저.
  7. 제1항에 있어서, 상기 반도체 물질이, 그 원소가 원소 주기율표의 Ⅳ 및 Ⅵ 족으로부터의 선택된 합성물인 것을 특징으로 하는 고체 레이저.
  8. 제7항에 있어서, 상기 반도체 물질의 원소가 주석, 납, 셀레늄 및 텔루륨으로 구성된 그룹으로부터의 원소인 것을 특징으로 하는 고체 레이저.
  9. 제1항에 있어서, 상기 반도체 물질이 실리콘 또는 게르마늄인 것을 특징으로 하는 고체 레이저.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870010519A 1986-09-26 1987-09-23 고체 레이저 KR910009909B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/911,976 US4737960A (en) 1986-09-26 1986-09-26 Rare earth doped semiconductor laser
US911976 1986-09-26

Publications (2)

Publication Number Publication Date
KR880004612A true KR880004612A (ko) 1988-06-07
KR910009909B1 KR910009909B1 (ko) 1991-12-03

Family

ID=25431206

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870010519A KR910009909B1 (ko) 1986-09-26 1987-09-23 고체 레이저

Country Status (9)

Country Link
US (1) US4737960A (ko)
EP (1) EP0261875B1 (ko)
JP (1) JPS63102292A (ko)
KR (1) KR910009909B1 (ko)
CA (1) CA1288157C (ko)
DE (1) DE3788768T2 (ko)
DK (1) DK504987A (ko)
ES (1) ES2047492T3 (ko)
HK (1) HK104894A (ko)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4928285A (en) * 1988-02-23 1990-05-22 Kabushiki Kaisha Toshiba Impurity-doped semiconductor laser device for single wavelength oscillation
US5050179A (en) * 1989-04-20 1991-09-17 Massachusetts Institute Of Technology External cavity semiconductor laser
US5160492A (en) * 1989-04-24 1992-11-03 Hewlett-Packard Company Buried isolation using ion implantation and subsequent epitaxial growth
FR2648281B1 (fr) * 1989-06-08 1993-12-24 Etat Francais Cnet Laser a semi-conducteur stabilise en longueur d'onde
US5048036A (en) * 1989-09-18 1991-09-10 Spectra Diode Laboratories, Inc. Heterostructure laser with lattice mismatch
US4984242A (en) * 1989-09-18 1991-01-08 Spectra Diode Laboratories, Inc. GaAs/AlGaAs heterostructure laser containing indium
US5045498A (en) * 1990-08-10 1991-09-03 Hewlett-Packard Company Method of fabricating an atomic element doped semiconductor injection laser using ion implantation and epitaxial growth on the implanted surface
US5335240A (en) * 1992-12-22 1994-08-02 Iowa State University Research Foundation, Inc. Periodic dielectric structure for production of photonic band gap and devices incorporating the same
US5406573A (en) * 1992-12-22 1995-04-11 Iowa State University Research Foundation Periodic dielectric structure for production of photonic band gap and method for fabricating the same
JPH07197629A (ja) * 1993-12-29 1995-08-01 Sumitomo Rubber Ind Ltd 二重床用パネルの支持脚
US5796771A (en) * 1996-08-19 1998-08-18 The Regents Of The University Of California Miniature self-pumped monolithically integrated solid state laser
US7440180B2 (en) * 2004-02-13 2008-10-21 Tang Yin S Integration of rare-earth doped amplifiers into semiconductor structures and uses of same
GB201019725D0 (en) * 2010-11-22 2011-01-05 Univ Surrey Optoelectronic devices
DE102018115222A1 (de) * 2018-06-25 2020-01-02 Otto-Von-Guericke-Universität Magdeburg Halbleiterschichtstapel und Verfahren zu dessen Herstellung
CN109705674B (zh) * 2019-01-23 2020-09-11 闽江学院 一种聚乙烯醇缩丁醛树脂基激光防护涂层及其制备方法
US20240195140A1 (en) * 2021-04-21 2024-06-13 Massachusetts Institute Of Technology Methods And Apparatus To Generate Macroscopic Fock And Other Sub-Poissonian States Of Radiation
CN114300946A (zh) * 2021-12-30 2022-04-08 北京工业大学 一种稀土掺杂的光子级联边发射半导体激光器及制备方法
CN114336285A (zh) * 2021-12-30 2022-04-12 北京工业大学 稀土掺杂的光子级联vcsel激光器

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DE1236687B (de) * 1962-01-10 1967-03-16 Varian Associates Optischer Sender oder Verstaerker fuer phasenkohaerente Strahlung
US3748593A (en) * 1970-11-17 1973-07-24 Method and means of construction of a semiconductor material for use as a laser
US4081763A (en) * 1973-01-04 1978-03-28 Natalya Andreevna Vlasenko Electroluminescent laser
US4193044A (en) * 1978-01-26 1980-03-11 The United States Of America As Represented By The Secretary Of The Army Rare earth semiconductor laser
DE3344138A1 (de) * 1982-12-11 1984-06-14 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., 8000 München Optoelektronisches bauelement, insbesondere eine laserdiode oder eine leuchtdiode
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US4637025A (en) * 1984-10-22 1987-01-13 Polaroid Corporation Super radiant light source

Also Published As

Publication number Publication date
DK504987D0 (da) 1987-09-25
DK504987A (da) 1988-03-27
EP0261875A2 (en) 1988-03-30
KR910009909B1 (ko) 1991-12-03
US4737960A (en) 1988-04-12
JPS63102292A (ja) 1988-05-07
DE3788768D1 (de) 1994-02-24
ES2047492T3 (es) 1994-03-01
EP0261875A3 (en) 1989-04-05
EP0261875B1 (en) 1994-01-12
HK104894A (en) 1994-10-07
JPH0552073B2 (ko) 1993-08-04
DE3788768T2 (de) 1994-04-28
CA1288157C (en) 1991-08-27

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