DK504987D0 - Faststof-laser med et halvlederlag dopet med ioner af sjaeldne jordarter - Google Patents
Faststof-laser med et halvlederlag dopet med ioner af sjaeldne jordarterInfo
- Publication number
- DK504987D0 DK504987D0 DK504987A DK504987A DK504987D0 DK 504987 D0 DK504987 D0 DK 504987D0 DK 504987 A DK504987 A DK 504987A DK 504987 A DK504987 A DK 504987A DK 504987 D0 DK504987 D0 DK 504987D0
- Authority
- DK
- Denmark
- Prior art keywords
- iones
- drawn
- semiconductor
- rare earth
- solid laser
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1608—Solid materials characterised by an active (lasing) ion rare earth erbium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1628—Solid materials characterised by a semiconducting matrix
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3068—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure deep levels
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S372/00—Coherent light generators
- Y10S372/704—Summary reference
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/911,976 US4737960A (en) | 1986-09-26 | 1986-09-26 | Rare earth doped semiconductor laser |
Publications (2)
Publication Number | Publication Date |
---|---|
DK504987D0 true DK504987D0 (da) | 1987-09-25 |
DK504987A DK504987A (da) | 1988-03-27 |
Family
ID=25431206
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK504987A DK504987A (da) | 1986-09-26 | 1987-09-25 | Faststof-laser med et halvlederlag dopet med ioner af sjaeldne jordarter |
Country Status (9)
Country | Link |
---|---|
US (1) | US4737960A (da) |
EP (1) | EP0261875B1 (da) |
JP (1) | JPS63102292A (da) |
KR (1) | KR910009909B1 (da) |
CA (1) | CA1288157C (da) |
DE (1) | DE3788768T2 (da) |
DK (1) | DK504987A (da) |
ES (1) | ES2047492T3 (da) |
HK (1) | HK104894A (da) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4928285A (en) * | 1988-02-23 | 1990-05-22 | Kabushiki Kaisha Toshiba | Impurity-doped semiconductor laser device for single wavelength oscillation |
US5050179A (en) * | 1989-04-20 | 1991-09-17 | Massachusetts Institute Of Technology | External cavity semiconductor laser |
US5160492A (en) * | 1989-04-24 | 1992-11-03 | Hewlett-Packard Company | Buried isolation using ion implantation and subsequent epitaxial growth |
FR2648281B1 (fr) * | 1989-06-08 | 1993-12-24 | Etat Francais Cnet | Laser a semi-conducteur stabilise en longueur d'onde |
US5048036A (en) * | 1989-09-18 | 1991-09-10 | Spectra Diode Laboratories, Inc. | Heterostructure laser with lattice mismatch |
US4984242A (en) * | 1989-09-18 | 1991-01-08 | Spectra Diode Laboratories, Inc. | GaAs/AlGaAs heterostructure laser containing indium |
US5045498A (en) * | 1990-08-10 | 1991-09-03 | Hewlett-Packard Company | Method of fabricating an atomic element doped semiconductor injection laser using ion implantation and epitaxial growth on the implanted surface |
US5335240A (en) * | 1992-12-22 | 1994-08-02 | Iowa State University Research Foundation, Inc. | Periodic dielectric structure for production of photonic band gap and devices incorporating the same |
US5406573A (en) * | 1992-12-22 | 1995-04-11 | Iowa State University Research Foundation | Periodic dielectric structure for production of photonic band gap and method for fabricating the same |
JPH07197629A (ja) * | 1993-12-29 | 1995-08-01 | Sumitomo Rubber Ind Ltd | 二重床用パネルの支持脚 |
US5796771A (en) * | 1996-08-19 | 1998-08-18 | The Regents Of The University Of California | Miniature self-pumped monolithically integrated solid state laser |
US7440180B2 (en) * | 2004-02-13 | 2008-10-21 | Tang Yin S | Integration of rare-earth doped amplifiers into semiconductor structures and uses of same |
GB201019725D0 (en) * | 2010-11-22 | 2011-01-05 | Univ Surrey | Optoelectronic devices |
DE102018115222A1 (de) * | 2018-06-25 | 2020-01-02 | Otto-Von-Guericke-Universität Magdeburg | Halbleiterschichtstapel und Verfahren zu dessen Herstellung |
CN109705674B (zh) * | 2019-01-23 | 2020-09-11 | 闽江学院 | 一种聚乙烯醇缩丁醛树脂基激光防护涂层及其制备方法 |
US20240195140A1 (en) * | 2021-04-21 | 2024-06-13 | Massachusetts Institute Of Technology | Methods And Apparatus To Generate Macroscopic Fock And Other Sub-Poissonian States Of Radiation |
CN114300946A (zh) * | 2021-12-30 | 2022-04-08 | 北京工业大学 | 一种稀土掺杂的光子级联边发射半导体激光器及制备方法 |
CN114336285A (zh) * | 2021-12-30 | 2022-04-12 | 北京工业大学 | 稀土掺杂的光子级联vcsel激光器 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1236687B (de) * | 1962-01-10 | 1967-03-16 | Varian Associates | Optischer Sender oder Verstaerker fuer phasenkohaerente Strahlung |
US3748593A (en) * | 1970-11-17 | 1973-07-24 | Method and means of construction of a semiconductor material for use as a laser | |
US4081763A (en) * | 1973-01-04 | 1978-03-28 | Natalya Andreevna Vlasenko | Electroluminescent laser |
US4193044A (en) * | 1978-01-26 | 1980-03-11 | The United States Of America As Represented By The Secretary Of The Army | Rare earth semiconductor laser |
DE3344138A1 (de) * | 1982-12-11 | 1984-06-14 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., 8000 München | Optoelektronisches bauelement, insbesondere eine laserdiode oder eine leuchtdiode |
US4577322A (en) * | 1983-10-19 | 1986-03-18 | General Motors Corporation | Lead-ytterbium-tin telluride heterojunction semiconductor laser |
US4637025A (en) * | 1984-10-22 | 1987-01-13 | Polaroid Corporation | Super radiant light source |
-
1986
- 1986-09-26 US US06/911,976 patent/US4737960A/en not_active Expired - Lifetime
-
1987
- 1987-09-17 DE DE87308235T patent/DE3788768T2/de not_active Expired - Fee Related
- 1987-09-17 EP EP87308235A patent/EP0261875B1/en not_active Expired - Lifetime
- 1987-09-17 ES ES87308235T patent/ES2047492T3/es not_active Expired - Lifetime
- 1987-09-23 KR KR1019870010519A patent/KR910009909B1/ko not_active IP Right Cessation
- 1987-09-25 JP JP62239087A patent/JPS63102292A/ja active Granted
- 1987-09-25 CA CA000547841A patent/CA1288157C/en not_active Expired - Fee Related
- 1987-09-25 DK DK504987A patent/DK504987A/da not_active Application Discontinuation
-
1994
- 1994-09-29 HK HK104894A patent/HK104894A/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE3788768D1 (de) | 1994-02-24 |
ES2047492T3 (es) | 1994-03-01 |
EP0261875A3 (en) | 1989-04-05 |
CA1288157C (en) | 1991-08-27 |
KR880004612A (ko) | 1988-06-07 |
DE3788768T2 (de) | 1994-04-28 |
EP0261875B1 (en) | 1994-01-12 |
HK104894A (en) | 1994-10-07 |
JPS63102292A (ja) | 1988-05-07 |
DK504987A (da) | 1988-03-27 |
EP0261875A2 (en) | 1988-03-30 |
JPH0552073B2 (da) | 1993-08-04 |
KR910009909B1 (ko) | 1991-12-03 |
US4737960A (en) | 1988-04-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
AHB | Application shelved due to non-payment |