JPS56120168A - Extrahigh frequency high output field-effect transistor - Google Patents

Extrahigh frequency high output field-effect transistor

Info

Publication number
JPS56120168A
JPS56120168A JP854480A JP854480A JPS56120168A JP S56120168 A JPS56120168 A JP S56120168A JP 854480 A JP854480 A JP 854480A JP 854480 A JP854480 A JP 854480A JP S56120168 A JPS56120168 A JP S56120168A
Authority
JP
Japan
Prior art keywords
electrodes
taking
source
active layer
source electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP854480A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0116026B2 (enExample
Inventor
Junichi Sone
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP854480A priority Critical patent/JPS56120168A/ja
Publication of JPS56120168A publication Critical patent/JPS56120168A/ja
Publication of JPH0116026B2 publication Critical patent/JPH0116026B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Wire Bonding (AREA)
  • Junction Field-Effect Transistors (AREA)
JP854480A 1980-01-28 1980-01-28 Extrahigh frequency high output field-effect transistor Granted JPS56120168A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP854480A JPS56120168A (en) 1980-01-28 1980-01-28 Extrahigh frequency high output field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP854480A JPS56120168A (en) 1980-01-28 1980-01-28 Extrahigh frequency high output field-effect transistor

Publications (2)

Publication Number Publication Date
JPS56120168A true JPS56120168A (en) 1981-09-21
JPH0116026B2 JPH0116026B2 (enExample) 1989-03-22

Family

ID=11696077

Family Applications (1)

Application Number Title Priority Date Filing Date
JP854480A Granted JPS56120168A (en) 1980-01-28 1980-01-28 Extrahigh frequency high output field-effect transistor

Country Status (1)

Country Link
JP (1) JPS56120168A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01225176A (ja) * 1988-03-03 1989-09-08 Nec Corp 電界効果トランジスタ

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5393788A (en) * 1977-01-26 1978-08-17 Mitsubishi Electric Corp Production of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5393788A (en) * 1977-01-26 1978-08-17 Mitsubishi Electric Corp Production of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01225176A (ja) * 1988-03-03 1989-09-08 Nec Corp 電界効果トランジスタ

Also Published As

Publication number Publication date
JPH0116026B2 (enExample) 1989-03-22

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