JPS56120127A - Check method for mask pattern defect - Google Patents
Check method for mask pattern defectInfo
- Publication number
- JPS56120127A JPS56120127A JP2433180A JP2433180A JPS56120127A JP S56120127 A JPS56120127 A JP S56120127A JP 2433180 A JP2433180 A JP 2433180A JP 2433180 A JP2433180 A JP 2433180A JP S56120127 A JPS56120127 A JP S56120127A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- image
- pattern
- film
- defect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
Abstract
PURPOSE:To discover a defect visually in a short time without fail by transferring a positive image and a negative image on a transparent substrate and leaving only a defective pattern part transparent the regard to a check on a photomask used for the manufacture of a semiconductor device. CONSTITUTION:A mask to be checked 20 is tightly attached on a positive-type photoregist film 101, and a light is irradiated in ''L'' direction. Then through development process, a positive image 101a corresponding to a pattern 22 on the mask 20 is obtained. Thus the formation of a missing or a defect part is confirmed. Next, a negative-type photoregist film 102 is applied and formed on a positive image 101a, and on the said film, a standard mask 10 is tightly attached. Following this procedure, a light is irrediated in ''L'' direction and through development process, a negative image 102a corresponding to an inverted image of a pattern 12 of the mask 10 is obtained on the positive image 101a. This photoregist film generates a missing or a defective part 103 only on a part corresponding to a defect 23 in a pattern 22 of the mask 20. Only said missing or defective part remains transparent.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2433180A JPS56120127A (en) | 1980-02-27 | 1980-02-27 | Check method for mask pattern defect |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2433180A JPS56120127A (en) | 1980-02-27 | 1980-02-27 | Check method for mask pattern defect |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56120127A true JPS56120127A (en) | 1981-09-21 |
Family
ID=12135189
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2433180A Pending JPS56120127A (en) | 1980-02-27 | 1980-02-27 | Check method for mask pattern defect |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56120127A (en) |
-
1980
- 1980-02-27 JP JP2433180A patent/JPS56120127A/en active Pending
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