JPS56119994A - Driving method of charge-transfer device - Google Patents
Driving method of charge-transfer deviceInfo
- Publication number
- JPS56119994A JPS56119994A JP2165980A JP2165980A JPS56119994A JP S56119994 A JPS56119994 A JP S56119994A JP 2165980 A JP2165980 A JP 2165980A JP 2165980 A JP2165980 A JP 2165980A JP S56119994 A JPS56119994 A JP S56119994A
- Authority
- JP
- Japan
- Prior art keywords
- transfer
- charge
- driver
- electrode
- period
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
- G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
Landscapes
- Networks Using Active Elements (AREA)
Abstract
PURPOSE:To perform driving of high S/N with simple constitution and low power consumption by connecting the final transfer electrode and a reset gate etc. to the driver independent of the driver for the clock pulses to be applied to the other transfer electrodes. CONSTITUTION:The final transfer electrode 3c and reset gate 5 of a charge-transfer device and connected to a clock pulse driver 22d independent of the drivers 22a- 22c of 3-phase clock pulses for the charge-transfer electrodes of respective stage. The transient period T5 of this case is the time corresponding to the signal charge transfer period determined by electrode constitution, the output impedance of the driver 22d and the product of the load capacities of the gate 5 and electrode 3c. In case the number of transfer stages is large, the load capacity of the final stage is minute as compared to the load capacity of the entire part and therefore the period T5 of the final stage is small and the signal period T6 is large. Hence, the charge-transfer device is driver at low power consumption with high S/N and simple constitution.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2165980A JPS56119994A (en) | 1980-02-25 | 1980-02-25 | Driving method of charge-transfer device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2165980A JPS56119994A (en) | 1980-02-25 | 1980-02-25 | Driving method of charge-transfer device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56119994A true JPS56119994A (en) | 1981-09-19 |
Family
ID=12061163
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2165980A Pending JPS56119994A (en) | 1980-02-25 | 1980-02-25 | Driving method of charge-transfer device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56119994A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4680637A (en) * | 1985-01-14 | 1987-07-14 | Kabushiki Kaisha Toshiba | CCD area sensor with low signal level variation |
US5182623A (en) * | 1989-11-13 | 1993-01-26 | Texas Instruments Incorporated | Charge coupled device/charge super sweep image system and method for making |
US5528643A (en) * | 1989-11-13 | 1996-06-18 | Texas Instruments Incorporated | Charge coupled device/charge super sweep image system and method for making |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS503789A (en) * | 1973-05-15 | 1975-01-16 |
-
1980
- 1980-02-25 JP JP2165980A patent/JPS56119994A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS503789A (en) * | 1973-05-15 | 1975-01-16 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4680637A (en) * | 1985-01-14 | 1987-07-14 | Kabushiki Kaisha Toshiba | CCD area sensor with low signal level variation |
US5182623A (en) * | 1989-11-13 | 1993-01-26 | Texas Instruments Incorporated | Charge coupled device/charge super sweep image system and method for making |
US5369039A (en) * | 1989-11-13 | 1994-11-29 | Texas Instruments Incorporated | Method of making charge coupled device/charge super sweep image system |
US5528643A (en) * | 1989-11-13 | 1996-06-18 | Texas Instruments Incorporated | Charge coupled device/charge super sweep image system and method for making |
US5652622A (en) * | 1989-11-13 | 1997-07-29 | Texas Instruments Inc | Charge coupled device/charge super sweep image system and method for making |
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