JPS56119994A - Driving method of charge-transfer device - Google Patents

Driving method of charge-transfer device

Info

Publication number
JPS56119994A
JPS56119994A JP2165980A JP2165980A JPS56119994A JP S56119994 A JPS56119994 A JP S56119994A JP 2165980 A JP2165980 A JP 2165980A JP 2165980 A JP2165980 A JP 2165980A JP S56119994 A JPS56119994 A JP S56119994A
Authority
JP
Japan
Prior art keywords
transfer
charge
driver
electrode
period
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2165980A
Other languages
Japanese (ja)
Inventor
Nobuo Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP2165980A priority Critical patent/JPS56119994A/en
Publication of JPS56119994A publication Critical patent/JPS56119994A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage

Landscapes

  • Networks Using Active Elements (AREA)

Abstract

PURPOSE:To perform driving of high S/N with simple constitution and low power consumption by connecting the final transfer electrode and a reset gate etc. to the driver independent of the driver for the clock pulses to be applied to the other transfer electrodes. CONSTITUTION:The final transfer electrode 3c and reset gate 5 of a charge-transfer device and connected to a clock pulse driver 22d independent of the drivers 22a- 22c of 3-phase clock pulses for the charge-transfer electrodes of respective stage. The transient period T5 of this case is the time corresponding to the signal charge transfer period determined by electrode constitution, the output impedance of the driver 22d and the product of the load capacities of the gate 5 and electrode 3c. In case the number of transfer stages is large, the load capacity of the final stage is minute as compared to the load capacity of the entire part and therefore the period T5 of the final stage is small and the signal period T6 is large. Hence, the charge-transfer device is driver at low power consumption with high S/N and simple constitution.
JP2165980A 1980-02-25 1980-02-25 Driving method of charge-transfer device Pending JPS56119994A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2165980A JPS56119994A (en) 1980-02-25 1980-02-25 Driving method of charge-transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2165980A JPS56119994A (en) 1980-02-25 1980-02-25 Driving method of charge-transfer device

Publications (1)

Publication Number Publication Date
JPS56119994A true JPS56119994A (en) 1981-09-19

Family

ID=12061163

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2165980A Pending JPS56119994A (en) 1980-02-25 1980-02-25 Driving method of charge-transfer device

Country Status (1)

Country Link
JP (1) JPS56119994A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4680637A (en) * 1985-01-14 1987-07-14 Kabushiki Kaisha Toshiba CCD area sensor with low signal level variation
US5182623A (en) * 1989-11-13 1993-01-26 Texas Instruments Incorporated Charge coupled device/charge super sweep image system and method for making
US5528643A (en) * 1989-11-13 1996-06-18 Texas Instruments Incorporated Charge coupled device/charge super sweep image system and method for making

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS503789A (en) * 1973-05-15 1975-01-16

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS503789A (en) * 1973-05-15 1975-01-16

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4680637A (en) * 1985-01-14 1987-07-14 Kabushiki Kaisha Toshiba CCD area sensor with low signal level variation
US5182623A (en) * 1989-11-13 1993-01-26 Texas Instruments Incorporated Charge coupled device/charge super sweep image system and method for making
US5369039A (en) * 1989-11-13 1994-11-29 Texas Instruments Incorporated Method of making charge coupled device/charge super sweep image system
US5528643A (en) * 1989-11-13 1996-06-18 Texas Instruments Incorporated Charge coupled device/charge super sweep image system and method for making
US5652622A (en) * 1989-11-13 1997-07-29 Texas Instruments Inc Charge coupled device/charge super sweep image system and method for making

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