JPS5611682A - Matrix memory circuit using mis field effect transistor - Google Patents

Matrix memory circuit using mis field effect transistor

Info

Publication number
JPS5611682A
JPS5611682A JP8731079A JP8731079A JPS5611682A JP S5611682 A JPS5611682 A JP S5611682A JP 8731079 A JP8731079 A JP 8731079A JP 8731079 A JP8731079 A JP 8731079A JP S5611682 A JPS5611682 A JP S5611682A
Authority
JP
Japan
Prior art keywords
circuit
memory circuit
response
write
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8731079A
Other languages
Japanese (ja)
Other versions
JPS5849956B2 (en
Inventor
Masato Wada
Masabumi Tanimoto
Nobuaki Ieda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP54087310A priority Critical patent/JPS5849956B2/en
Publication of JPS5611682A publication Critical patent/JPS5611682A/en
Publication of JPS5849956B2 publication Critical patent/JPS5849956B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells

Abstract

PURPOSE:To enable small sized circuit integration and to reduce the delay in response at write-in and readout, by constituting the current control circuit of the unit memory circuit forming the matrix memory circuit with two sets of parallel MISFETs. CONSTITUTION:The current control circuit D of the unit memory circuit Mij is formed with MISFETQ1, Q2 in parallel connection, they are conductive with the selection of the common row lines W1j, W2j, the current via FETQ1, Q2 is summed and fed to the current response circuit H and the information by the write-in as ROM is stored. Accordingly, the gate widths T1, T2 by the conductors 22, 23 of the lines W1j, W2j of FETQ1, Q2 are halved in comparison with the use of one FET, the resistance and capacitance is reduced, the time constant is reduced to about 1/4, and the reduction in response at write-in can be prevented. This is the same for the readout by the current application to one line W2j and the reduction in the response speed can be prevented. Further, with the constitution of reduced gate width, the circuit is small in size for circuit integration.
JP54087310A 1979-07-10 1979-07-10 Matrix memory circuit using MIS field effect transistors Expired JPS5849956B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54087310A JPS5849956B2 (en) 1979-07-10 1979-07-10 Matrix memory circuit using MIS field effect transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54087310A JPS5849956B2 (en) 1979-07-10 1979-07-10 Matrix memory circuit using MIS field effect transistors

Publications (2)

Publication Number Publication Date
JPS5611682A true JPS5611682A (en) 1981-02-05
JPS5849956B2 JPS5849956B2 (en) 1983-11-08

Family

ID=13911255

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54087310A Expired JPS5849956B2 (en) 1979-07-10 1979-07-10 Matrix memory circuit using MIS field effect transistors

Country Status (1)

Country Link
JP (1) JPS5849956B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS583975A (en) * 1981-06-29 1983-01-10 Hitachi Ltd Method and device for forming film by sputtering
EP2444972A1 (en) * 2009-06-15 2012-04-25 Sony Corporation Semiconductor device
WO2023207236A1 (en) * 2022-04-29 2023-11-02 华为技术有限公司 Probability bit unit circuit, probability bit circuit system and control method therefor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01177549U (en) * 1988-05-26 1989-12-19

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS583975A (en) * 1981-06-29 1983-01-10 Hitachi Ltd Method and device for forming film by sputtering
JPH034620B2 (en) * 1981-06-29 1991-01-23 Hitachi Ltd
EP2444972A1 (en) * 2009-06-15 2012-04-25 Sony Corporation Semiconductor device
CN102460586A (en) * 2009-06-15 2012-05-16 索尼公司 Semiconductor device
JPWO2010147029A1 (en) * 2009-06-15 2012-12-06 ソニー株式会社 Semiconductor device
EP2444972A4 (en) * 2009-06-15 2014-03-19 Sony Corp Semiconductor device
WO2023207236A1 (en) * 2022-04-29 2023-11-02 华为技术有限公司 Probability bit unit circuit, probability bit circuit system and control method therefor

Also Published As

Publication number Publication date
JPS5849956B2 (en) 1983-11-08

Similar Documents

Publication Publication Date Title
JPS57127989A (en) Mos static type ram
GB2026239B (en) Field effect transistor with an insulated gate electrode
KR880003332A (en) Integrated memory circuit
JPS5661088A (en) Semiconductor memory device
MY102019A (en) A semiconductor memory device.
ES461619A1 (en) Electronically alterable diode logic circuit
GB887652A (en) Superconductor circuitry
JPS5611682A (en) Matrix memory circuit using mis field effect transistor
JPS5611679A (en) Matrix circuit using mis field effect transistor
JPS5651085A (en) Address selection circuit
JPS5634184A (en) Semiconductor memory
JPS53112687A (en) Semiconductor device
JPS53136447A (en) Associative memory
JPS52108743A (en) Dynamic memory device
JPS5292441A (en) Semiconductor memory unit
GB1537114A (en) Memory apparatus
JPS568874A (en) Bipolar transistor device
JPS5593325A (en) Precharge circuit of mos transistor
JPS5615079A (en) Insulated gate field effect transistor couple
JPS57105890A (en) Semiconductor storage device
JPS54122984A (en) Memory unit of integrated circuit
JPS5760585A (en) Memory device
GB1300301A (en) Read-only memories
JPS5677981A (en) Memory access circuit
JPS55118666A (en) Semiconductor device