JPS56116669A - Field effect transistor - Google Patents
Field effect transistorInfo
- Publication number
- JPS56116669A JPS56116669A JP2017680A JP2017680A JPS56116669A JP S56116669 A JPS56116669 A JP S56116669A JP 2017680 A JP2017680 A JP 2017680A JP 2017680 A JP2017680 A JP 2017680A JP S56116669 A JPS56116669 A JP S56116669A
- Authority
- JP
- Japan
- Prior art keywords
- region
- gate electrode
- type
- substrate
- decreasing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- 230000003247 decreasing effect Effects 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017680A JPS56116669A (en) | 1980-02-19 | 1980-02-19 | Field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017680A JPS56116669A (en) | 1980-02-19 | 1980-02-19 | Field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56116669A true JPS56116669A (en) | 1981-09-12 |
Family
ID=12019863
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017680A Pending JPS56116669A (en) | 1980-02-19 | 1980-02-19 | Field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56116669A (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0282580A (ja) * | 1988-09-19 | 1990-03-23 | Sanyo Electric Co Ltd | 縦型mosfet |
JPH07263681A (ja) * | 1994-03-24 | 1995-10-13 | Nec Yamagata Ltd | 電界効果トランジスタ |
JP2005347549A (ja) * | 2004-06-03 | 2005-12-15 | Oki Electric Ind Co Ltd | 半導体素子及びその製造方法 |
US9842912B2 (en) | 2015-08-19 | 2017-12-12 | Fuji Electric Co., Ltd. | Semiconductor device and method of manufacturing semiconductor device |
-
1980
- 1980-02-19 JP JP2017680A patent/JPS56116669A/ja active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0282580A (ja) * | 1988-09-19 | 1990-03-23 | Sanyo Electric Co Ltd | 縦型mosfet |
JPH07263681A (ja) * | 1994-03-24 | 1995-10-13 | Nec Yamagata Ltd | 電界効果トランジスタ |
JP2005347549A (ja) * | 2004-06-03 | 2005-12-15 | Oki Electric Ind Co Ltd | 半導体素子及びその製造方法 |
US9842912B2 (en) | 2015-08-19 | 2017-12-12 | Fuji Electric Co., Ltd. | Semiconductor device and method of manufacturing semiconductor device |
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