JPS56115538A - Treating method for semiconductor patterning wafer - Google Patents

Treating method for semiconductor patterning wafer

Info

Publication number
JPS56115538A
JPS56115538A JP1856280A JP1856280A JPS56115538A JP S56115538 A JPS56115538 A JP S56115538A JP 1856280 A JP1856280 A JP 1856280A JP 1856280 A JP1856280 A JP 1856280A JP S56115538 A JPS56115538 A JP S56115538A
Authority
JP
Japan
Prior art keywords
wafer
treating method
semiconductor patterning
semiconductor
diced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1856280A
Other languages
Japanese (ja)
Inventor
Mitsukuni Kai
Toshikimi Jinno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP1856280A priority Critical patent/JPS56115538A/en
Publication of JPS56115538A publication Critical patent/JPS56115538A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To improve the yield of the treatment of the semiconductor patterning wafer by injecting conductive fluid onto the surface of the wafer patterned or diced and thus removing foreign material such as dusts or the like to clean the surface of the wafer without damaging an element in the wafer. CONSTITUTION:The conductive fluid such as, for example, carbonic acid water having 20-40muOMEGA<-1> of conductivity is injected from a nozzle 3 via high pressure air of 4-6kg/cm<2> on the surface of the semiconductor wafer 1 patterned or diced. After the injection and cleaning, it is immediately dried. Thus, the foreign material such as dusts or the like can be removed from the wafer 1 without damaging the element, thereby improving the yield of the treatment.
JP1856280A 1980-02-19 1980-02-19 Treating method for semiconductor patterning wafer Pending JPS56115538A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1856280A JPS56115538A (en) 1980-02-19 1980-02-19 Treating method for semiconductor patterning wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1856280A JPS56115538A (en) 1980-02-19 1980-02-19 Treating method for semiconductor patterning wafer

Publications (1)

Publication Number Publication Date
JPS56115538A true JPS56115538A (en) 1981-09-10

Family

ID=11975054

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1856280A Pending JPS56115538A (en) 1980-02-19 1980-02-19 Treating method for semiconductor patterning wafer

Country Status (1)

Country Link
JP (1) JPS56115538A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56116035A (en) * 1980-02-18 1981-09-11 Chiyou Lsi Gijutsu Kenkyu Kumiai Washing method of photomask
JPS587831A (en) * 1981-07-07 1983-01-17 Sumitomo Shoji Kk Washing method for wafer by high pressured water and device thereof
JPH02164035A (en) * 1988-12-19 1990-06-25 Nec Corp Cleaning of semiconductor substrate
US7600522B2 (en) 2003-05-22 2009-10-13 Dainippon Screen Mfg. Co., Ltd. Substrate treatment method and substrate treatment apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4933575A (en) * 1972-07-26 1974-03-28
JPS4999480A (en) * 1973-01-02 1974-09-19

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4933575A (en) * 1972-07-26 1974-03-28
JPS4999480A (en) * 1973-01-02 1974-09-19

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56116035A (en) * 1980-02-18 1981-09-11 Chiyou Lsi Gijutsu Kenkyu Kumiai Washing method of photomask
JPS587831A (en) * 1981-07-07 1983-01-17 Sumitomo Shoji Kk Washing method for wafer by high pressured water and device thereof
JPH02164035A (en) * 1988-12-19 1990-06-25 Nec Corp Cleaning of semiconductor substrate
US7600522B2 (en) 2003-05-22 2009-10-13 Dainippon Screen Mfg. Co., Ltd. Substrate treatment method and substrate treatment apparatus

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