JPS56112735A - Manufacture of compound semiconductor device - Google Patents

Manufacture of compound semiconductor device

Info

Publication number
JPS56112735A
JPS56112735A JP1540580A JP1540580A JPS56112735A JP S56112735 A JPS56112735 A JP S56112735A JP 1540580 A JP1540580 A JP 1540580A JP 1540580 A JP1540580 A JP 1540580A JP S56112735 A JPS56112735 A JP S56112735A
Authority
JP
Japan
Prior art keywords
oxide
as2o3
compound semiconductor
gas
matrix
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1540580A
Other languages
Japanese (ja)
Inventor
Noriyuki Shimano
Yasuhiro Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP1540580A priority Critical patent/JPS56112735A/en
Publication of JPS56112735A publication Critical patent/JPS56112735A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02241—III-V semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To form a preferable matrix oxide film in the compound semiconductor device by transporting an oxygen produced by the thermal decomposition of the oxide of the ingredient element X or Y of compound semiconductor X and Y with hydrogen compound gas of the element having high vapor pressure of the element X and Y as a carrier. CONSTITUTION:AsH3 gas is flowed through a quartz open tube 1. There are arranged GaAs matrix crystal 2 obliquely with respect to the gas flow and an oxide 3 of Ga2O3 or As2O3 at the upstream side of the gas flow. The matrix crystal is heated at 300-700 deg.C and the oxide As2O3 is heated at 400-500 deg.C in electric ovens 4 and 5 respectively. The thermal oxidation of the GaAs is proceeded in the AsH3 containing infinitesimal amount of oxygen thermally decomposed from the As2O3, thereby obtaining preferable base oxide film having no contamination. When InP is used as the matrix crystal, P2O3 may be used as the oxide, and PH3 may be used as the carrier.
JP1540580A 1980-02-13 1980-02-13 Manufacture of compound semiconductor device Pending JPS56112735A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1540580A JPS56112735A (en) 1980-02-13 1980-02-13 Manufacture of compound semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1540580A JPS56112735A (en) 1980-02-13 1980-02-13 Manufacture of compound semiconductor device

Publications (1)

Publication Number Publication Date
JPS56112735A true JPS56112735A (en) 1981-09-05

Family

ID=11887813

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1540580A Pending JPS56112735A (en) 1980-02-13 1980-02-13 Manufacture of compound semiconductor device

Country Status (1)

Country Link
JP (1) JPS56112735A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002334642A (en) * 2001-05-08 2002-11-22 Mitsubishi Electric Corp Direct current vacuum circuit breaker
CN103173715A (en) * 2012-12-19 2013-06-26 常州星海电子有限公司 Preparation method of GaP film material

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002334642A (en) * 2001-05-08 2002-11-22 Mitsubishi Electric Corp Direct current vacuum circuit breaker
CN103173715A (en) * 2012-12-19 2013-06-26 常州星海电子有限公司 Preparation method of GaP film material

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