KR970048923A - Method for manufacturing selective oxide mask of semiconductor device - Google Patents
Method for manufacturing selective oxide mask of semiconductor device Download PDFInfo
- Publication number
- KR970048923A KR970048923A KR1019950054359A KR19950054359A KR970048923A KR 970048923 A KR970048923 A KR 970048923A KR 1019950054359 A KR1019950054359 A KR 1019950054359A KR 19950054359 A KR19950054359 A KR 19950054359A KR 970048923 A KR970048923 A KR 970048923A
- Authority
- KR
- South Korea
- Prior art keywords
- nitride film
- semiconductor device
- gas
- forming
- selective oxide
- Prior art date
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- Local Oxidation Of Silicon (AREA)
- Formation Of Insulating Films (AREA)
Abstract
1. 청구 범위에 기재된 발명이 속한 기술분야1. TECHNICAL FIELD OF THE INVENTION
반도체 소자의 제조방법Manufacturing method of semiconductor device
2. 발명이 해결하려고 하는 기술적 과제2. The technical problem to be solved by the invention
산화막 형성 공정과 질화막 형성 공정이 이분화 되어 있을 뿐만 아니라 LPCVD를 이용하면 비용면에서는 경제적이지만, 상기 질화막의 순도를 떨어뜨리는 파티클의 발생이 심각하다는 문제가 발생함.Although the oxide film forming process and the nitride film forming process are not only divided into two parts but also LPCVD is used in terms of cost-effectiveness, there is a problem in that generation of particles that degrade the purity of the nitride film is serious.
3.발명의 해결방법의 요지3. Summary of the solution of the invention
실란 가스와 암모니아 가스 분위기의 PCVD를 이용하여 질화막을 형성하고, 질소 가스와 암모니아 가스를 이용한 퍼지를 실시하여 질화막을 안정화시킴으로써 보다 고순도의 선택적 산화 마스크를 형성할 수 있도록 함.The nitride film is formed using PCVD in a silane gas and ammonia gas atmosphere, and the nitride film is stabilized by purging with nitrogen gas and ammonia gas to form a selective purity mask of higher purity.
4.발명의 중요한 용도4. Important uses of the invention
반도체 소자의 제조, 특히 반도체 소자의 선택적 산화 마스크 제조에 이용됨.Used in the manufacture of semiconductor devices, in particular in the manufacture of selective oxide masks for semiconductor devices.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1019950054359A KR970048923A (en) | 1995-12-22 | 1995-12-22 | Method for manufacturing selective oxide mask of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950054359A KR970048923A (en) | 1995-12-22 | 1995-12-22 | Method for manufacturing selective oxide mask of semiconductor device |
Publications (1)
Publication Number | Publication Date |
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KR970048923A true KR970048923A (en) | 1997-07-29 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1019950054359A KR970048923A (en) | 1995-12-22 | 1995-12-22 | Method for manufacturing selective oxide mask of semiconductor device |
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KR (1) | KR970048923A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100498419B1 (en) * | 1997-12-30 | 2005-09-08 | 삼성전자주식회사 | Method for forming silicon-rich nitride layer in semiconductor device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4834020A (en) * | 1987-12-04 | 1989-05-30 | Watkins-Johnson Company | Atmospheric pressure chemical vapor deposition apparatus |
US5122391A (en) * | 1991-03-13 | 1992-06-16 | Watkins-Johnson Company | Method for producing highly conductive and transparent films of tin and fluorine doped indium oxide by APCVD |
KR940008014A (en) * | 1992-09-30 | 1994-04-28 | 김주용 | Method of forming interlayer insulating film in semiconductor device |
-
1995
- 1995-12-22 KR KR1019950054359A patent/KR970048923A/en not_active Application Discontinuation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4834020A (en) * | 1987-12-04 | 1989-05-30 | Watkins-Johnson Company | Atmospheric pressure chemical vapor deposition apparatus |
US5122391A (en) * | 1991-03-13 | 1992-06-16 | Watkins-Johnson Company | Method for producing highly conductive and transparent films of tin and fluorine doped indium oxide by APCVD |
KR940008014A (en) * | 1992-09-30 | 1994-04-28 | 김주용 | Method of forming interlayer insulating film in semiconductor device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100498419B1 (en) * | 1997-12-30 | 2005-09-08 | 삼성전자주식회사 | Method for forming silicon-rich nitride layer in semiconductor device |
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