KR970048923A - Method for manufacturing selective oxide mask of semiconductor device - Google Patents

Method for manufacturing selective oxide mask of semiconductor device Download PDF

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Publication number
KR970048923A
KR970048923A KR1019950054359A KR19950054359A KR970048923A KR 970048923 A KR970048923 A KR 970048923A KR 1019950054359 A KR1019950054359 A KR 1019950054359A KR 19950054359 A KR19950054359 A KR 19950054359A KR 970048923 A KR970048923 A KR 970048923A
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KR
South Korea
Prior art keywords
nitride film
semiconductor device
gas
forming
selective oxide
Prior art date
Application number
KR1019950054359A
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Korean (ko)
Inventor
백정권
Original Assignee
김주용
현대전자산업 주식회사
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950054359A priority Critical patent/KR970048923A/en
Publication of KR970048923A publication Critical patent/KR970048923A/en

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  • Local Oxidation Of Silicon (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

1. 청구 범위에 기재된 발명이 속한 기술분야1. TECHNICAL FIELD OF THE INVENTION

반도체 소자의 제조방법Manufacturing method of semiconductor device

2. 발명이 해결하려고 하는 기술적 과제2. The technical problem to be solved by the invention

산화막 형성 공정과 질화막 형성 공정이 이분화 되어 있을 뿐만 아니라 LPCVD를 이용하면 비용면에서는 경제적이지만, 상기 질화막의 순도를 떨어뜨리는 파티클의 발생이 심각하다는 문제가 발생함.Although the oxide film forming process and the nitride film forming process are not only divided into two parts but also LPCVD is used in terms of cost-effectiveness, there is a problem in that generation of particles that degrade the purity of the nitride film is serious.

3.발명의 해결방법의 요지3. Summary of the solution of the invention

실란 가스와 암모니아 가스 분위기의 PCVD를 이용하여 질화막을 형성하고, 질소 가스와 암모니아 가스를 이용한 퍼지를 실시하여 질화막을 안정화시킴으로써 보다 고순도의 선택적 산화 마스크를 형성할 수 있도록 함.The nitride film is formed using PCVD in a silane gas and ammonia gas atmosphere, and the nitride film is stabilized by purging with nitrogen gas and ammonia gas to form a selective purity mask of higher purity.

4.발명의 중요한 용도4. Important uses of the invention

반도체 소자의 제조, 특히 반도체 소자의 선택적 산화 마스크 제조에 이용됨.Used in the manufacture of semiconductor devices, in particular in the manufacture of selective oxide masks for semiconductor devices.

Description

반도체 소자의 선택적 산화 마스크 제조 방법Method for manufacturing selective oxide mask of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

Claims (3)

소자간 분리막 형성을 위한 반도체 소자의 선택적 산화 마스크 제조 방법에 있어서, 소정의 온도에서 열산화 공정을 진행하여 반도체 기판상에 산화막을 형성하는 단계와; 질소 가스와 암모니아 가스를 이용한 제1퍼지를 실시하는 단계와, 소정의 공정조건 하에서 소정의 가스를 이용하여 질화막을 형성하는 단계 및 질소 가스와 암모니아 가스를 이용한 제2퍼지를 실시하는 단계를 포함해서 이루어진 반도체 소자의 질화막 형성 방법.CLAIMS 1. A method for manufacturing a selective oxide mask of a semiconductor device for forming an isolation film between devices, the method comprising: forming an oxide film on a semiconductor substrate by performing a thermal oxidation process at a predetermined temperature; Performing a first purge using nitrogen gas and ammonia gas, forming a nitride film using a predetermined gas under a predetermined process condition, and performing a second purge using nitrogen gas and ammonia gas. A nitride film forming method of a semiconductor device. 제1항에 있어서, 상기 질화막을 형성하는 단계의 공정 조건은 대기압 상태에서 약 900℃의 온도로 이루어지는 것을 특징으로 하는 반도체 소자의 선택적 산화 마스크 제조 방법.The method of claim 1, wherein the process condition of forming the nitride film is performed at a temperature of about 900 ° C. under atmospheric pressure. 제1항 또는 제2항에 있어서, 상기 질화막은 실란 가스와 암모니아 가수 분위기에서 형성되는 것을 특징으로 하는 반도체 소자의 선택적 산화 마스크 제조 방법.The method of claim 1, wherein the nitride film is formed in a silane gas and an ammonia valence atmosphere. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950054359A 1995-12-22 1995-12-22 Method for manufacturing selective oxide mask of semiconductor device KR970048923A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950054359A KR970048923A (en) 1995-12-22 1995-12-22 Method for manufacturing selective oxide mask of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950054359A KR970048923A (en) 1995-12-22 1995-12-22 Method for manufacturing selective oxide mask of semiconductor device

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KR970048923A true KR970048923A (en) 1997-07-29

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KR1019950054359A KR970048923A (en) 1995-12-22 1995-12-22 Method for manufacturing selective oxide mask of semiconductor device

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100498419B1 (en) * 1997-12-30 2005-09-08 삼성전자주식회사 Method for forming silicon-rich nitride layer in semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4834020A (en) * 1987-12-04 1989-05-30 Watkins-Johnson Company Atmospheric pressure chemical vapor deposition apparatus
US5122391A (en) * 1991-03-13 1992-06-16 Watkins-Johnson Company Method for producing highly conductive and transparent films of tin and fluorine doped indium oxide by APCVD
KR940008014A (en) * 1992-09-30 1994-04-28 김주용 Method of forming interlayer insulating film in semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4834020A (en) * 1987-12-04 1989-05-30 Watkins-Johnson Company Atmospheric pressure chemical vapor deposition apparatus
US5122391A (en) * 1991-03-13 1992-06-16 Watkins-Johnson Company Method for producing highly conductive and transparent films of tin and fluorine doped indium oxide by APCVD
KR940008014A (en) * 1992-09-30 1994-04-28 김주용 Method of forming interlayer insulating film in semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100498419B1 (en) * 1997-12-30 2005-09-08 삼성전자주식회사 Method for forming silicon-rich nitride layer in semiconductor device

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