KR960002472A - Oxide film formation method by chemical vapor deposition - Google Patents

Oxide film formation method by chemical vapor deposition Download PDF

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Publication number
KR960002472A
KR960002472A KR1019940013722A KR19940013722A KR960002472A KR 960002472 A KR960002472 A KR 960002472A KR 1019940013722 A KR1019940013722 A KR 1019940013722A KR 19940013722 A KR19940013722 A KR 19940013722A KR 960002472 A KR960002472 A KR 960002472A
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KR
South Korea
Prior art keywords
oxide film
gas
chemical vapor
vapor deposition
film formation
Prior art date
Application number
KR1019940013722A
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Korean (ko)
Other versions
KR0132381B1 (en
Inventor
박인옥
서광수
이성수
정영석
김의식
홍흥기
구영모
김세정
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
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Priority to KR1019940013722A priority Critical patent/KR0132381B1/en
Publication of KR960002472A publication Critical patent/KR960002472A/en
Application granted granted Critical
Publication of KR0132381B1 publication Critical patent/KR0132381B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

본 발명은 반도체 제조공정중 실리콘막과 접촉되는 산화막 형성방법에 관한 것으로, 화학기상증착(CVD)법으로 SiH2Cl2가스와 N₂O 가스를 이용하여 실리콘막(1) 상에 산화막(2) 증착한 후 연속적으로 N₂O 가스를 이용하여 어닐링하는 것을 특징으로 함으로써 산화막 증착 후 동일한 장비에서 N₂O 가스를 이용하여 어닐링함으로써 별도의 설비의 추가 없이 양질의 산화막 형성이 가능하다.The present invention is an oxide film on the to, chemical vapor deposition (CVD) method with SiH 2 Cl 2 gas and the N ₂ O gas silicon film (1) using an on oxide film forming method in contact with the silicon film of the semiconductor manufacturing process (2 After the deposition, the annealing is continuously performed using N ₂ O gas. Thus, after an oxide film is deposited, the annealing is performed using N ₂ O gas in the same equipment, thereby forming a high quality oxide film without additional equipment.

Description

화학기상증착법에 의한 산화막 형성방법Oxide film formation method by chemical vapor deposition

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 본 발명의 일실시예에 따른 공정단면도.1 is a cross-sectional view of a process according to an embodiment of the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1 : 실리콘기판 2 : SiO2막1: silicon substrate 2: SiO 2 film

3 : SixOyNZ경계막3: SixOyN Z boundary film

Claims (2)

반도체 제고공정중 실리콘막(1)과 접촉되는 산화막(2) 형성방법에 있어서, 화학기상증착(CVD)법으로 SiH2Cl2가스와 N2O 가스를 이용하여 실리콘막(1) 상에 산화막(2) 증착한 후 연속적으로 N2O 가스를 이용하여 어닐링하는 것을 특징으로 하는 화학기상증착법에 의한 산화막 형성방법.In the method of forming the oxide film 2 in contact with the silicon film 1 during the semiconductor stocking process, the oxide film is formed on the silicon film 1 by using SiH 2 Cl 2 gas and N 2 O gas by chemical vapor deposition (CVD). (2) An oxide film forming method by chemical vapor deposition, characterized by continuously annealing using N 2 O gas after deposition. 제1항에 있어서, 상기 SiH2Cl2가스와 N2O 가스는 lTorr 미만의 저압, 800 내지 900℃ 온도범위 하에서 동시에 주입되는 것을 특징으로 하는 화학기상증착법에 의한 산화막 형성방법.The method of claim 1, wherein the SiH 2 Cl 2 gas and the N 2 O gas are injected at the same time under a low pressure of less than lTorr, and a temperature range of 800 to 900 ° C. 6. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940013722A 1994-06-17 1994-06-17 Formation method of oxide film by chemical vapor deposition KR0132381B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940013722A KR0132381B1 (en) 1994-06-17 1994-06-17 Formation method of oxide film by chemical vapor deposition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940013722A KR0132381B1 (en) 1994-06-17 1994-06-17 Formation method of oxide film by chemical vapor deposition

Publications (2)

Publication Number Publication Date
KR960002472A true KR960002472A (en) 1996-01-26
KR0132381B1 KR0132381B1 (en) 1998-04-11

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ID=19385496

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940013722A KR0132381B1 (en) 1994-06-17 1994-06-17 Formation method of oxide film by chemical vapor deposition

Country Status (1)

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KR (1) KR0132381B1 (en)

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Publication number Publication date
KR0132381B1 (en) 1998-04-11

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