KR960002813A - Semiconductor transistor manufacturing method - Google Patents

Semiconductor transistor manufacturing method Download PDF

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Publication number
KR960002813A
KR960002813A KR1019940014487A KR19940014487A KR960002813A KR 960002813 A KR960002813 A KR 960002813A KR 1019940014487 A KR1019940014487 A KR 1019940014487A KR 19940014487 A KR19940014487 A KR 19940014487A KR 960002813 A KR960002813 A KR 960002813A
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KR
South Korea
Prior art keywords
oxide film
gas
semiconductor transistor
forming
sih
Prior art date
Application number
KR1019940014487A
Other languages
Korean (ko)
Inventor
박인옥
서광주
이성수
정영석
김의식
홍흥기
구영모
김세정
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940014487A priority Critical patent/KR960002813A/en
Publication of KR960002813A publication Critical patent/KR960002813A/en

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Abstract

본 발명은 게이트 산화막의 전기적 특성 열화를 가져오는 실리콘기판과 산화막 경계면의 거칠기 증가를 방지하기 위하여 열산화 방식이 아닌 화학기상증착법으로 SiH4가스와 N2O가스를 이용하여 산화막을 형성하는 것과, 외부 환경에 의한 오염을 최소화 하기 위하여 동일한 장치 내에서 연속으로 SiH4가스를 이용하여 게이트 전극용 폴리실리콘막을 증착하는 것을 내용으로 하는 반도체 트랜지스터 제조 방법에 관한 것이다.The present invention relates to forming an oxide film using SiH 4 gas and N 2 O gas by chemical vapor deposition instead of thermal oxidation to prevent an increase in the roughness of the silicon substrate and the oxide interface resulting in deterioration of electrical characteristics of the gate oxide film. The present invention relates to a method of manufacturing a semiconductor transistor comprising depositing a polysilicon film for a gate electrode using SiH 4 gas continuously in the same device in order to minimize contamination by an external environment.

Description

반도체 트랜지스터 제조 방법Semiconductor transistor manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1A도 내지 제1C도는 본 발명에 따른 게이트 산화막 및 폴리실리콘막 형성 공정도.1A to 1C are process diagrams for forming a gate oxide film and a polysilicon film according to the present invention.

Claims (2)

반도체 트랜지스터 제조 공정중 게이트 산화막 및 게이트 전극용 폴리실리콘막을 형성하는 방법에 있어서, 화학기상증착법으로 반도체 기판(1)상에 산화막(2)을 형성하는 단계; 동일한 장비에서 산화막(2)을 어닐링하는 단계; 동일한 장비에서 폴리실리콘막(3)을 상기 산화막(2)상에 형성하는 단계를 포함하여 이루어지는것을특징으로 하는 반도체 트랜지스터 제조 방법.A method of forming a gate oxide film and a polysilicon film for a gate electrode during a semiconductor transistor manufacturing process, comprising: forming an oxide film (2) on a semiconductor substrate (1) by chemical vapor deposition; Annealing the oxide film 2 in the same equipment; Forming a polysilicon film (3) on the oxide film (2) in the same equipment. 제1항에 있어서, 상기 산화막(2)은 저압화학기상증착 장비에서 SiH4가스와 N2O가스 사용하여 형성하며, N2O가스를 사용하여 어닐링하는 것을 특징으로 하는 반도체 트랜지스터 제조 방법.The method according to claim 1, wherein the oxide film (2) is formed using SiH 4 gas and N 2 O gas in a low pressure chemical vapor deposition apparatus, and annealed using N 2 O gas. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940014487A 1994-06-23 1994-06-23 Semiconductor transistor manufacturing method KR960002813A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940014487A KR960002813A (en) 1994-06-23 1994-06-23 Semiconductor transistor manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940014487A KR960002813A (en) 1994-06-23 1994-06-23 Semiconductor transistor manufacturing method

Publications (1)

Publication Number Publication Date
KR960002813A true KR960002813A (en) 1996-01-26

Family

ID=66686013

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940014487A KR960002813A (en) 1994-06-23 1994-06-23 Semiconductor transistor manufacturing method

Country Status (1)

Country Link
KR (1) KR960002813A (en)

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