KR960002813A - Semiconductor transistor manufacturing method - Google Patents
Semiconductor transistor manufacturing method Download PDFInfo
- Publication number
- KR960002813A KR960002813A KR1019940014487A KR19940014487A KR960002813A KR 960002813 A KR960002813 A KR 960002813A KR 1019940014487 A KR1019940014487 A KR 1019940014487A KR 19940014487 A KR19940014487 A KR 19940014487A KR 960002813 A KR960002813 A KR 960002813A
- Authority
- KR
- South Korea
- Prior art keywords
- oxide film
- gas
- semiconductor transistor
- forming
- sih
- Prior art date
Links
Abstract
본 발명은 게이트 산화막의 전기적 특성 열화를 가져오는 실리콘기판과 산화막 경계면의 거칠기 증가를 방지하기 위하여 열산화 방식이 아닌 화학기상증착법으로 SiH4가스와 N2O가스를 이용하여 산화막을 형성하는 것과, 외부 환경에 의한 오염을 최소화 하기 위하여 동일한 장치 내에서 연속으로 SiH4가스를 이용하여 게이트 전극용 폴리실리콘막을 증착하는 것을 내용으로 하는 반도체 트랜지스터 제조 방법에 관한 것이다.The present invention relates to forming an oxide film using SiH 4 gas and N 2 O gas by chemical vapor deposition instead of thermal oxidation to prevent an increase in the roughness of the silicon substrate and the oxide interface resulting in deterioration of electrical characteristics of the gate oxide film. The present invention relates to a method of manufacturing a semiconductor transistor comprising depositing a polysilicon film for a gate electrode using SiH 4 gas continuously in the same device in order to minimize contamination by an external environment.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제1A도 내지 제1C도는 본 발명에 따른 게이트 산화막 및 폴리실리콘막 형성 공정도.1A to 1C are process diagrams for forming a gate oxide film and a polysilicon film according to the present invention.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940014487A KR960002813A (en) | 1994-06-23 | 1994-06-23 | Semiconductor transistor manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940014487A KR960002813A (en) | 1994-06-23 | 1994-06-23 | Semiconductor transistor manufacturing method |
Publications (1)
Publication Number | Publication Date |
---|---|
KR960002813A true KR960002813A (en) | 1996-01-26 |
Family
ID=66686013
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940014487A KR960002813A (en) | 1994-06-23 | 1994-06-23 | Semiconductor transistor manufacturing method |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR960002813A (en) |
-
1994
- 1994-06-23 KR KR1019940014487A patent/KR960002813A/en not_active Application Discontinuation
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