KR980006521A - Method for manufacturing gate oxide film of semiconductor device - Google Patents

Method for manufacturing gate oxide film of semiconductor device Download PDF

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Publication number
KR980006521A
KR980006521A KR1019960025770A KR19960025770A KR980006521A KR 980006521 A KR980006521 A KR 980006521A KR 1019960025770 A KR1019960025770 A KR 1019960025770A KR 19960025770 A KR19960025770 A KR 19960025770A KR 980006521 A KR980006521 A KR 980006521A
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KR
South Korea
Prior art keywords
oxide film
gate oxide
semiconductor device
manufacturing
thermal oxidation
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KR1019960025770A
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Korean (ko)
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박미라
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김주용
현대전자산업주식회사
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Priority to KR1019960025770A priority Critical patent/KR980006521A/en
Publication of KR980006521A publication Critical patent/KR980006521A/en

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Abstract

본 발명은 반도체소자의 게이트 산화막 제조방법에 관한 것으로서, 소자분리 산화막이 형성된 반도체기판을 열산화 튜브에 탑재하고 주 열산화 공정을 진행하여 열산화막을 형성하는 공정까지 소저의 혼합가스에 DCE가스를 흘려주어 상기의 DCE 가스가 C2H2CI2→2HCI + 2CO2로 분해되며 반도체기판 표면에 형성된 자연산화막의 불순물을 제거하도록 하였으므로, 자연산화막의 절연 특성이 향상되어 상대적으로 자연산화막이 게이트 산화막에서 차지하는 두께 비가 큰 초박형 게이트 산화막의 막직이 우수해지므로 소자의 고집적화에 유리하고, 공정수율 및 소자 동작의 신뢰성을 향상시킬 수 있다.The present invention relates to a method of manufacturing a gate oxide film of a semiconductor device, in which a semiconductor substrate on which a device isolation oxide film is formed is mounted on a thermally oxidized tube, and a DCE gas The DCE gas is decomposed into C 2 H 2 CI 2 ? 2HCl + 2CO 2 and the impurities of the natural oxide film formed on the surface of the semiconductor substrate are removed. Therefore, the isolation characteristic of the natural oxide film is improved, The thickness of the ultra-thin gate oxide film having a large thickness ratio is excellent, which is advantageous for high integration of the device, and the process yield and reliability of the device operation can be improved.

Description

반도체소자의 게이트 산화막 제조방법Method for manufacturing gate oxide film of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제1도는 본 발명에 따른 반도체소자의 게이트 산화막 제조 흐름도.FIG. 1 is a flow chart of a gate oxide film production process of a semiconductor device according to the present invention; FIG.

Claims (10)

반도체기판을 열산화 튜브에 탑재하고 열처리하여 게이트 산화막을 형성하는 공정을 구비하는 반도체소자의 게이트 산화막 제조방법에 있어서, 상기 열처리 튜브에 웨이퍼를 탑재하고 열산화시키는 공정 동안에 상기 열처리 튜브에 DCE를 흘려주어 상기 반도체기판 표면에 형성된 자연산화막의 불순물을 제거하여 주는 것을 특징으로하는 반도체소자의 게이트 산화막 제조방법.A method for manufacturing a gate oxide film of a semiconductor device, the method comprising: a step of mounting a semiconductor substrate on a thermal oxidation tube and forming a gate oxide film by heat treatment; wherein DCE is flowed into the heat treatment tube during a step of mounting a wafer on the heat treatment tube and performing thermal oxidation Wherein the impurity of the native oxide film formed on the surface of the semiconductor substrate is removed. 제1항에 있어서, 상기 열산화 튜브에 반도체기판을 탑재할 때 상기 튜브의 온도가 600~800℃인 것을 특징으로하는 반도체소자의 게이트 산화막 제조방법.The method for manufacturing a gate oxide film of a semiconductor device according to claim 1, wherein a temperature of the tube is 600 to 800 ° C when the semiconductor substrate is mounted on the thermal oxidation tube. 제1항에 있어서, 상기 열산화 튜브에 반도체기판을 탑재할 때 상기 튜브가 N2/O2의 혼합 가스 분위기인 것을 특징으로하는 반도체소자의 게이트 산화막 제조방법.The method for manufacturing a gate oxide film of a semiconductor device according to claim 1, wherein when the semiconductor substrate is mounted on the thermal oxidation tube, the tube is a mixed gas atmosphere of N 2 / O 2 . 제1항에 있어서, 상기 열산화 공정을 진행하는 주산화 공정까지 상기 열산화 튜브 N2/O2/DCE 혼합 가스를 흘려주며 온도가 상승시키는 것을 특징으로하는 반도체소자의 게이트 산화막 제조방법.The method according to claim 1, wherein the temperature of the N 2 / O 2 / DCE mixed gas is increased by increasing the temperature of the N 2 / O 2 / DCE mixed gas until the main oxidation process. 제4항에 있어서, 상기 웨이퍼 탑재에서 주산화 온도까지의 온도 상승을 2~3℃/sec의 비율로 하는 것을 특징으로하는 반도체소자의 게이트 산화막 제조방법.5. The method for manufacturing a gate oxide film of a semiconductor device according to claim 4, wherein the temperature rise from the wafer mounting to the main oxidation temperature is made at a rate of 2 to 3 占 폚 / sec. 제1항에 있어서, 상기 열산화 온도를 700~900℃에서 실시하는 것을 특징으로하는 반도체소자의 게이트 산화막 제조방법.The method for manufacturing a gate oxide film of a semiconductor device according to claim 1, wherein the thermal oxidation is performed at 700 to 900 占 폚. 제1항에 있어서, 상기 열산화 공정을 N2/O2/N2/DCE 혼합 가스 분위기에서 실시하는 것을 특징으로하는 반도체소자의 게이트 산화막 제조방법.The method for manufacturing a gate oxide film of a semiconductor device according to claim 1, wherein the thermal oxidation process is performed in an N 2 / O 2 / N 2 / DCE mixed gas atmosphere. 제7항에 있어서, 상기 N2/O2/N2혼합 가스는 3~5/6~10/8~12SLPM이 되도록 하는 것을 특징으로하는 반도체소자의 게이트 산화막 제조방법.The method of claim 7, wherein the N 2 / O 2 / N 2 mixed gas is 3 to 5/6 to 10/8 to 12 SLPM. 제1항에 있어서, 상기 열산화 공정 후에 O2가스 분위기에서 열처리하는 것을 특징으로하는 반도체소자의 게이트 산화막 제조방법.The method for manufacturing a gate oxide film of a semiconductor device according to claim 1, wherein the thermal oxidation process is followed by heat treatment in an O 2 gas atmosphere. 제1항에 있어서, 상기 열산화 공정후 N2열처리를 800~1000℃온도에서 20분간 실리하는 것을 특징으로하는 반도체소자의 게이트 산화막 제조방법.The method according to claim 1, wherein the N 2 heat treatment is performed at a temperature of 800 to 1000 ° C for 20 minutes after the thermal oxidation process.
KR1019960025770A 1996-06-29 1996-06-29 Method for manufacturing gate oxide film of semiconductor device KR980006521A (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06163534A (en) * 1992-11-18 1994-06-10 Matsushita Electron Corp Fabrication of semiconductor device
KR950015363A (en) * 1993-11-02 1995-06-16 오오가 노리오 Disc cartridge case
KR950021253A (en) * 1993-12-07 1995-07-26 김주용 Gate oxide film formation method of a semiconductor device
KR950027998A (en) * 1994-03-11 1995-10-18 김주용 Field oxide film formation method of a semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06163534A (en) * 1992-11-18 1994-06-10 Matsushita Electron Corp Fabrication of semiconductor device
KR950015363A (en) * 1993-11-02 1995-06-16 오오가 노리오 Disc cartridge case
KR950021253A (en) * 1993-12-07 1995-07-26 김주용 Gate oxide film formation method of a semiconductor device
KR950027998A (en) * 1994-03-11 1995-10-18 김주용 Field oxide film formation method of a semiconductor device

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