KR960039193A - Method of manufacturing oxide film of semiconductor device - Google Patents

Method of manufacturing oxide film of semiconductor device Download PDF

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Publication number
KR960039193A
KR960039193A KR1019950008135A KR19950008135A KR960039193A KR 960039193 A KR960039193 A KR 960039193A KR 1019950008135 A KR1019950008135 A KR 1019950008135A KR 19950008135 A KR19950008135 A KR 19950008135A KR 960039193 A KR960039193 A KR 960039193A
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KR
South Korea
Prior art keywords
oxide film
oxidation
semiconductor device
tube
dce
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Application number
KR1019950008135A
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Korean (ko)
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KR0146173B1 (en
Inventor
엄금용
정이선
Original Assignee
김주용
현대전자산업 주식회사
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Priority to KR1019950008135A priority Critical patent/KR0146173B1/en
Publication of KR960039193A publication Critical patent/KR960039193A/en
Application granted granted Critical
Publication of KR0146173B1 publication Critical patent/KR0146173B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

본 발명은 반도체소자의 산화막 제조방법에 관한것으로서, 반도체 웨이퍼를 보트에 탑재하고 보트를 산화 튜브내에 장착하여 예정된 온도에서 열산화를 살시하는 열산화 고정에서 열산화 공정의 전후에 각각 산호/DCE 및 산소/DCE/질소 혼합 가스를 흘려주는 정화 및 표면처리 공정을 진행하여 산화 튜브내의 알카리 이온 및 금속성 불순믈을 제거하고, 산화막의 표면 손상을 보상하였으므로, 산화막의 절연 특성이 향상되고, 트랩사이트가 감소되어 소자동작의 신뢰성 및 공정수율을 향상시킬 수 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for fabricating an oxide film of a semiconductor device, wherein the coral / DCE and before and after the thermal oxidation process in the thermal oxidation fixation where the semiconductor wafer is mounted in a boat and the boat is mounted in an oxidation tube to focus thermal oxidation at a predetermined temperature. Purification and surface treatment process of flowing oxygen / DCE / nitrogen mixed gas were removed to remove alkali ions and metallic impurities in the oxide tube, and surface damage of the oxide film was compensated. It can be reduced to improve the reliability and process yield of device operation.

Description

반도체 소자의 산화막 제조방법Method of manufacturing oxide film of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명에 따른 반도체소자의 산화막 제조방법을 설명하기 위한 공정 흐름도.2 is a process flowchart for explaining an oxide film manufacturing method of a semiconductor device according to the present invention.

Claims (8)

열산화에 의한 반도체소자의 산화막 제조방법에 있어서, 웨이퍼를 탑재한 보트를 산화 튜브에 탑재하고 상기 산화 튜브의 내측에 산소/DCE 혼합 가스를 흘려주어 내부를 정화시키는 공정과, 상기 반도체 웨이퍼 상에 열산화막을 형성하는 공정과, 상기 산화 튜브에 산소/DCE/질소 혼합가스를 흘려주어 열산화막의 손상을 보상하고 튜브 내부의 불순물을 제거하는 표면처리 공정을 구비하는 반도체소자의 산화막 제조방법.A method for producing an oxide film of a semiconductor device by thermal oxidation, comprising the steps of: mounting a boat on which a wafer is mounted on an oxide tube and purging the inside by flowing an oxygen / DCE mixed gas inside the oxide tube; And forming a thermal oxide film and a surface treatment step of flowing an oxygen / DCE / nitrogen mixed gas into the oxide tube to compensate for the damage of the thermal oxide film and to remove impurities in the tube. 제1항에 있어서, 상기 열산화 공정이 튜브의 초기 온도 보다 높은 고온 공정이거나, 낮은 저온 공정인 것을 특징으로 하는 반도체소자의 산화막 제조방법.The method of claim 1, wherein the thermal oxidation process is a high temperature process higher than the initial temperature of the tube or a low temperature process. 제1항에 있어서, 상기 정화 공정시 산소/DCE 혼합가스를 각각 8：0.3 SLPM으로 1∼10분을 흘려주는 것을 특징으로 하는 반도체소자의 산화막 제조방법.The method of manufacturing an oxide film of a semiconductor device according to claim 1, wherein the oxygen / DCE mixed gas is flowed at 8: 0.3 SLPM for 1 to 10 minutes in the purification step. 제1항에 있어서, 상기 열산화를 위한 온도 상승 공정전에 안정 상태를 유지시키는 공정을 추가로 실시하는 것을 특징으로 하는 반도체소자의 산화막 제조방법.The method of manufacturing an oxide film of a semiconductor device according to claim 1, further comprising a step of maintaining a stable state before the temperature raising step for thermal oxidation. 제1항에 있어서, 상기 열산화 공정을 예비산화와, 주산화 및 후산화의 세단계를 연속적으로 실시하는 것을 특징으로 하는 반도체소자의 산화막 제조방법.The method of manufacturing an oxide film of a semiconductor device according to claim 1, wherein the thermal oxidation process is performed in three stages of pre-oxidation, main oxidation and post-oxidation. 제5항에 있어서, 상기 예비산화 및 후산화를 각각 5∼10분씩 실시하는 것을 특징으로 하는 반도체소자의 산화막 제조방법.The method of manufacturing an oxide film of a semiconductor device according to claim 5, wherein the preliminary oxidation and the post-oxidation are performed for 5 to 10 minutes, respectively. 제1항에 있어서, 상기 열처리 온도를 저온 산화시에는 700∼800℃에서 열산화를 실시하고, 고온 산화에서는 900∼1200℃에서 실시하는 것을 특징으로 하는 반도체소자의 산화막 제조방법.The method of manufacturing an oxide film of a semiconductor device according to claim 1, wherein the heat treatment temperature is thermally oxidized at 700 to 800 캜 during low temperature oxidation and 900 to 1200 캜 at high temperature oxidation. 제1항에 있어서, 상기 표면처리 공정시 산소/DCE/질소 혼합가스를 8 : 25 : 0.3∼0.4 SLPM로 흘려주는 것을 특징으로 하는 반도체소자의 산화막 제조방법.2. The method of claim 1, wherein an oxygen / DCE / nitrogen mixed gas is flowed at 8: 25: 0.3 to 0.4 SLPM during the surface treatment process. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950008135A 1995-04-07 1995-04-07 Method for manufacturing oxide film of semiconductor device KR0146173B1 (en)

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KR960039193A true KR960039193A (en) 1996-11-21
KR0146173B1 KR0146173B1 (en) 1998-11-02

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100687410B1 (en) * 2005-12-28 2007-02-26 동부일렉트로닉스 주식회사 Method of forming the gate oxide in semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100399907B1 (en) * 1996-12-28 2003-12-24 주식회사 하이닉스반도체 Method for forming oxide layer of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100687410B1 (en) * 2005-12-28 2007-02-26 동부일렉트로닉스 주식회사 Method of forming the gate oxide in semiconductor device

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