JPS6221000Y2 - - Google Patents
Info
- Publication number
- JPS6221000Y2 JPS6221000Y2 JP3599882U JP3599882U JPS6221000Y2 JP S6221000 Y2 JPS6221000 Y2 JP S6221000Y2 JP 3599882 U JP3599882 U JP 3599882U JP 3599882 U JP3599882 U JP 3599882U JP S6221000 Y2 JPS6221000 Y2 JP S6221000Y2
- Authority
- JP
- Japan
- Prior art keywords
- gallium
- quartz tube
- heating element
- shield plate
- heat shield
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000009792 diffusion process Methods 0.000 claims description 17
- 239000010453 quartz Substances 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 11
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 9
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 9
- 229910052733 gallium Inorganic materials 0.000 claims description 9
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000012159 carrier gas Substances 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910001195 gallium oxide Inorganic materials 0.000 description 2
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Sampling And Sample Adjustment (AREA)
Description
本考案はシリコン半導体装置の製造過程に用い
る開管法によるガリウム拡散装置に関する。
開管法によるガリウム拡散では、拡散源として
三酸化ガリウム（Ga2O3）が使用される。この三
酸化ガリウムは950℃以上の温度で水素（H2）に
より熱分解するため、通常キヤリヤーガスとして
水分を含んだ水素が使用される。
ガリウム拡散装置（以下拡散装置と称す）のプ
ロセスチユーブとしては、拡散雰囲気として水素
が用いられるため、石英管が広く使用されてい
る。開管法によるガリウム拡散を高温度で長時間
にわたつて繰り返すと、熱分解したガリウム酸化
物が石英管の一部を侵触して、石英管の寿命を著
しく短かくするために、この石英管の寿命を長く
する手段としてメンテナンスが必要であつた。
本考案は上述したような欠点を解消するために
なされたもので、拡散装置に使用される石英管の
メンテナンスフリー化を実現することにより、石
英管の寿命を著しく延ばした拡散装置を提供せん
とするものである。
以下、図面に基づいて説明する。第１図は開管
法による従来のガリウム拡散装置の縦断面図であ
る。
１は石英管、２はキヤリヤーガス入口、２′は
キヤリヤーガス出口、３は拡散源である三酸化ガ
リウム、４は縦方向断面がＨ形をした円板状の石
英製熱しやへい板、５は石英管１の出口側内壁に
付着したガリウム酸化物、５′は熱しやへい板４
に付着したガリウム酸化物、６は被拡散物である
シリコン円板、７はシリコン円板を保持するため
の保持具、８は石英管１の入口側に冠着された気
密キヤツプ、８′は石英管１の出口側に冠着され
た気密キヤツプ、９は三酸化ガリウム３を熱分解
するために石英管１を外側より囲繞する円筒状の
発熱体、１０はシリコン円板を加熱するために石
英管１を外側より囲繞する円筒状の発熱体であ
る。なお熱しやへい板４はキヤリヤーガス出口
２′側で発熱体１０の端面に位置するところに配
置されていて、石英管１内の温度分布を均一化さ
せ、かつシリコン円板６の表面濃度を確保してい
る。
このように第１図で示す従来の拡散装置でガリ
ウム拡散を行う場合には、石英管１内の水分を含
んだ水素であるキヤリヤーガスで満され、このキ
ヤリヤーガスはキヤリヤーガス入口２側から矢印
方向のキヤリヤーガス出口２′側に流される。三
酸化ガリウム３を発熱体９で950℃以上に加熱
し、かつ発熱体１０を拡散設定温度、例えば1230
℃に加熱すると、三酸化ガリウム３は(1)式のよう
に熱分解が生じて、一部のガリウム（Ga）がシ
リコン円板６に拡散される。
The present invention relates to a gallium diffusion device using an open tube method used in the manufacturing process of silicon semiconductor devices. In the open tube method of gallium diffusion, gallium trioxide (Ga 2 O 3 ) is used as the diffusion source. Since this gallium trioxide is thermally decomposed by hydrogen (H 2 ) at a temperature of 950° C. or higher, hydrogen containing moisture is usually used as a carrier gas. Quartz tubes are widely used as process tubes for gallium diffusion devices (hereinafter referred to as diffusion devices) because hydrogen is used as a diffusion atmosphere. If gallium diffusion using the open tube method is repeated at high temperatures for a long period of time, thermally decomposed gallium oxide will invade a portion of the quartz tube, significantly shortening the life of the quartz tube. Maintenance was necessary as a means of prolonging the life of the machine. The present invention was made to eliminate the above-mentioned drawbacks, and aims to provide a diffusion device that significantly extends the life of the quartz tube by making the quartz tube used in the diffusion device maintenance-free. It is something to do. The description will be given below based on the drawings. FIG. 1 is a longitudinal sectional view of a conventional gallium diffusion device using the open tube method. 1 is a quartz tube, 2 is a carrier gas inlet, 2' is a carrier gas outlet, 3 is gallium trioxide which is a diffusion source, 4 is a disc-shaped quartz heat-resistant plate with an H-shaped longitudinal section, and 5 is a quartz tube. Gallium oxide attached to the inner wall of the outlet side of the tube 1, 5' is a heat shield plate 4
6 is a silicon disk which is a substance to be diffused, 7 is a holder for holding the silicon disk, 8 is an airtight cap attached to the entrance side of the quartz tube 1, and 8' is a An airtight cap is mounted on the outlet side of the quartz tube 1, 9 is a cylindrical heating element surrounding the quartz tube 1 from the outside in order to thermally decompose the gallium trioxide 3, and 10 is a heating element for heating the silicon disk. It is a cylindrical heating element that surrounds the quartz tube 1 from the outside. The heating shield plate 4 is placed at the end face of the heating element 10 on the side of the carrier gas outlet 2' to equalize the temperature distribution within the quartz tube 1 and ensure the surface concentration of the silicon disk 6. are doing. When performing gallium diffusion using the conventional diffusion device shown in FIG. It is flowed to the exit 2' side. The gallium trioxide 3 is heated to 950°C or higher with the heating element 9, and the heating element 10 is heated to a diffusion set temperature, for example, 1230°C.
When heated to a temperature of .degree. C., gallium trioxide 3 undergoes thermal decomposition as shown in equation (1), and a portion of gallium (Ga) is diffused into silicon disk 6.
【表】
←
〓………………………(1)
→[Table] ←
〓……………………(1)
→
Claims (1)
管内部に配置された被拡散物シリコンを加熱する
ために、該石英管の一定部分を外側より囲繞する
円筒状の発熱体の端面よりも内側で、かつ前記石
英管の内部に配置された三酸化ガリウムからなる
拡散源の不純物を運ぶ水分を含んだ水素からなる
キヤリヤーガスの流れ方向からみて、出口側の内
部温度が950℃以上の温度を有する位置に、縦方
向断面がＨ形をした円板状の熱しやへい板を設置
し、更に該熱しやへい板と同形の他の熱しやへい
板を、前記発熱体の端面よりも外側で、かつ前記
キヤリヤーガス出口側の内部温度が500〜650℃の
温度を有する位置に設置したことを特徴とする開
管法によるガリウム拡散装置。 In a gallium diffusion device using the open tube method, in order to heat the silicon to be diffused placed inside the quartz tube, the heating element is placed inside the end surface of a cylindrical heating element that surrounds a certain part of the quartz tube from the outside, and At a position where the internal temperature on the outlet side is 950° C. or higher, as viewed from the flow direction of a carrier gas made of hydrogen containing moisture that carries impurities of the diffusion source made of gallium trioxide disposed inside the quartz tube, A disc-shaped heat shield plate having an H-shaped longitudinal section is installed, and another heat shield plate of the same shape as the heat shield plate is installed outside the end surface of the heating element and connected to the carrier gas. A gallium diffusion device using an open tube method, characterized in that it is installed at a location where the internal temperature on the outlet side is 500 to 650°C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3599882U JPS58138333U (en) | 1982-03-15 | 1982-03-15 | gallium diffuser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3599882U JPS58138333U (en) | 1982-03-15 | 1982-03-15 | gallium diffuser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58138333U JPS58138333U (en) | 1983-09-17 |
| JPS6221000Y2 true JPS6221000Y2 (en) | 1987-05-28 |
Family
ID=30047453
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3599882U Granted JPS58138333U (en) | 1982-03-15 | 1982-03-15 | gallium diffuser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58138333U (en) |
-
1982
- 1982-03-15 JP JP3599882U patent/JPS58138333U/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58138333U (en) | 1983-09-17 |
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