JPS56112722A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56112722A
JPS56112722A JP1456480A JP1456480A JPS56112722A JP S56112722 A JPS56112722 A JP S56112722A JP 1456480 A JP1456480 A JP 1456480A JP 1456480 A JP1456480 A JP 1456480A JP S56112722 A JPS56112722 A JP S56112722A
Authority
JP
Japan
Prior art keywords
hydrogen
diffusing
layer
heating
nitrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1456480A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6249981B2 (enrdf_load_stackoverflow
Inventor
Tatsumi Takaira
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Kyushu Ltd
Original Assignee
NEC Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Kyushu Ltd filed Critical NEC Kyushu Ltd
Priority to JP1456480A priority Critical patent/JPS56112722A/ja
Publication of JPS56112722A publication Critical patent/JPS56112722A/ja
Publication of JPS6249981B2 publication Critical patent/JPS6249981B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
JP1456480A 1980-02-08 1980-02-08 Manufacture of semiconductor device Granted JPS56112722A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1456480A JPS56112722A (en) 1980-02-08 1980-02-08 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1456480A JPS56112722A (en) 1980-02-08 1980-02-08 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56112722A true JPS56112722A (en) 1981-09-05
JPS6249981B2 JPS6249981B2 (enrdf_load_stackoverflow) 1987-10-22

Family

ID=11864643

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1456480A Granted JPS56112722A (en) 1980-02-08 1980-02-08 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56112722A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6432830B1 (en) * 1998-05-15 2002-08-13 Applied Materials, Inc. Semiconductor fabrication process
US7772097B2 (en) 2007-11-05 2010-08-10 Asm America, Inc. Methods of selectively depositing silicon-containing films
JP2013232529A (ja) * 2012-04-27 2013-11-14 Tokyo Electron Ltd 不純物拡散方法、基板処理装置及び半導体装置の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5016151A (enrdf_load_stackoverflow) * 1973-06-15 1975-02-20

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5016151A (enrdf_load_stackoverflow) * 1973-06-15 1975-02-20

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6432830B1 (en) * 1998-05-15 2002-08-13 Applied Materials, Inc. Semiconductor fabrication process
US7772097B2 (en) 2007-11-05 2010-08-10 Asm America, Inc. Methods of selectively depositing silicon-containing films
JP2013232529A (ja) * 2012-04-27 2013-11-14 Tokyo Electron Ltd 不純物拡散方法、基板処理装置及び半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6249981B2 (enrdf_load_stackoverflow) 1987-10-22

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