JPS5611248B2 - - Google Patents

Info

Publication number
JPS5611248B2
JPS5611248B2 JP2017676A JP2017676A JPS5611248B2 JP S5611248 B2 JPS5611248 B2 JP S5611248B2 JP 2017676 A JP2017676 A JP 2017676A JP 2017676 A JP2017676 A JP 2017676A JP S5611248 B2 JPS5611248 B2 JP S5611248B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP2017676A
Other languages
Japanese (ja)
Other versions
JPS51110958A (enExample
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS51110958A publication Critical patent/JPS51110958A/ja
Publication of JPS5611248B2 publication Critical patent/JPS5611248B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65Integrated injection logic
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63Combinations of vertical and lateral BJTs

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Bipolar Transistors (AREA)
JP2017676A 1975-03-05 1976-02-27 Expired JPS5611248B2 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2509530A DE2509530C2 (de) 1975-03-05 1975-03-05 Halbleiteranordnung für die Grundbausteine eines hochintegrierbaren logischen Halbleiterschaltungskonzepts basierend auf Mehrfachkollektor-Umkehrtransistoren

Publications (2)

Publication Number Publication Date
JPS51110958A JPS51110958A (enExample) 1976-09-30
JPS5611248B2 true JPS5611248B2 (enExample) 1981-03-13

Family

ID=5940509

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017676A Expired JPS5611248B2 (enExample) 1975-03-05 1976-02-27

Country Status (14)

Country Link
US (1) US4035664A (enExample)
JP (1) JPS5611248B2 (enExample)
AT (1) AT373105B (enExample)
BE (1) BE838107A (enExample)
CA (1) CA1079819A (enExample)
CH (1) CH596670A5 (enExample)
DE (1) DE2509530C2 (enExample)
ES (1) ES445764A1 (enExample)
FR (1) FR2303381A1 (enExample)
GB (1) GB1497892A (enExample)
IL (1) IL49123A (enExample)
IT (1) IT1054868B (enExample)
NL (1) NL7602226A (enExample)
SE (1) SE407728B (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2308206A2 (fr) * 1975-04-14 1976-11-12 Radiotechnique Compelec Circuit logique integre a injecteurs de courant
US4097888A (en) * 1975-10-15 1978-06-27 Signetics Corporation High density collector-up structure
JPS5276887A (en) * 1975-12-22 1977-06-28 Fujitsu Ltd Semiconductor device
GB1580977A (en) * 1976-05-31 1980-12-10 Siemens Ag Schottkytransisitor-logic arrangements
DE2624547A1 (de) * 1976-06-01 1977-12-15 Siemens Ag Verstaerkerstufe zur stromversorgung von i hoch 2 l-schaltungen
DE2624584A1 (de) * 1976-06-01 1977-12-15 Siemens Ag Anordnung zur versorgung von i hoch 2 l-schaltungen mit verschiedenen stroemen
DE2652103C2 (de) * 1976-11-16 1982-10-28 Ibm Deutschland Gmbh, 7000 Stuttgart Integrierte Halbleiteranordnung für ein logisches Schaltungskonzept und Verfahren zu ihrer Herstellung
FR2375722A1 (fr) * 1976-12-21 1978-07-21 Thomson Csf Element logique a faible consommation
SU619066A1 (ru) * 1977-01-06 1979-03-15 Предприятие П/Я В-2892 Интегральный логический элемент
CH631298A5 (de) * 1977-01-10 1982-07-30 Kremlev V J Integrierte logische schaltung.
JPS5429585A (en) * 1977-08-09 1979-03-05 Oki Electric Ind Co Ltd Semiconductor integrated circuit
US4159915A (en) * 1977-10-25 1979-07-03 International Business Machines Corporation Method for fabrication vertical NPN and PNP structures utilizing ion-implantation
JPS5466784A (en) * 1977-11-08 1979-05-29 Toshiba Corp Semiconductor integrated circuit device
DE2750432C2 (de) * 1977-11-11 1985-05-09 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt I↑2↑L-Logik-Schaltungsanordnung
JPS5499580A (en) * 1977-12-27 1979-08-06 Nec Corp Semiconductor integrated circuit device
US4243895A (en) * 1978-01-04 1981-01-06 Nazarian Artashes R Integrated injection circuit
US4348600A (en) * 1978-02-14 1982-09-07 Motorola, Inc. Controlled current source for I2 L to analog interfaces
US4199776A (en) * 1978-08-24 1980-04-22 Rca Corporation Integrated injection logic with floating reinjectors
JPS56103538A (en) * 1980-01-22 1981-08-18 Yamatake Honeywell Co Ltd Logic circuit
JPS57198653A (en) * 1981-06-01 1982-12-06 Nec Ic Microcomput Syst Ltd Semiconductor integrated circuit
GB2153587A (en) * 1984-01-31 1985-08-21 Plessey Co Plc Improvements relating to semiconductor injection logic devices
US4644381A (en) * 1985-04-08 1987-02-17 Siemens Corporate Research & Support, Inc. I2 L heterostructure bipolar transistors and method of making the same
US4794277A (en) * 1986-01-13 1988-12-27 Unitrode Corporation Integrated circuit under-voltage lockout
US4754172A (en) * 1986-12-16 1988-06-28 Texas Instruments Incorporated STL low impedance buffer/driver

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2021824C3 (de) * 1970-05-05 1980-08-14 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithische Halbleiterschaltung
US3816758A (en) * 1971-04-14 1974-06-11 Ibm Digital logic circuit
NL7107040A (enExample) * 1971-05-22 1972-11-24
NL7200294A (enExample) * 1972-01-08 1973-07-10
DE2212168C2 (de) * 1972-03-14 1982-10-21 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte Halbleiteranordnung
DE2262297C2 (de) * 1972-12-20 1985-11-28 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierbare, logisch verknüpfbare Halbleiterschaltungsanordnung mit I↑2↑L-Aufbau
DE2446649A1 (de) * 1974-09-30 1976-04-15 Siemens Ag Bipolare logikschaltung

Also Published As

Publication number Publication date
IT1054868B (it) 1981-11-30
DE2509530A1 (de) 1976-09-09
FR2303381A1 (fr) 1976-10-01
SE7602480L (sv) 1976-09-06
AT373105B (de) 1983-12-27
SE407728B (sv) 1979-04-09
CH596670A5 (enExample) 1978-03-15
CA1079819A (en) 1980-06-17
IL49123A0 (en) 1976-05-31
ES445764A1 (es) 1977-06-01
BE838107A (fr) 1976-05-14
FR2303381B1 (enExample) 1978-11-10
GB1497892A (en) 1978-01-12
IL49123A (en) 1977-11-30
JPS51110958A (enExample) 1976-09-30
DE2509530C2 (de) 1985-05-23
NL7602226A (nl) 1976-09-07
US4035664A (en) 1977-07-12
ATA101476A (de) 1983-04-15

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