JPS5611248B2 - - Google Patents

Info

Publication number
JPS5611248B2
JPS5611248B2 JP2017676A JP2017676A JPS5611248B2 JP S5611248 B2 JPS5611248 B2 JP S5611248B2 JP 2017676 A JP2017676 A JP 2017676A JP 2017676 A JP2017676 A JP 2017676A JP S5611248 B2 JPS5611248 B2 JP S5611248B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP2017676A
Other versions
JPS51110958A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS51110958A publication Critical patent/JPS51110958A/ja
Publication of JPS5611248B2 publication Critical patent/JPS5611248B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821—Combination of lateral and vertical transistors only
JP2017676A 1975-03-05 1976-02-27 Expired JPS5611248B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2509530A DE2509530C2 (de) 1975-03-05 1975-03-05 Halbleiteranordnung für die Grundbausteine eines hochintegrierbaren logischen Halbleiterschaltungskonzepts basierend auf Mehrfachkollektor-Umkehrtransistoren

Publications (2)

Publication Number Publication Date
JPS51110958A JPS51110958A (ja) 1976-09-30
JPS5611248B2 true JPS5611248B2 (ja) 1981-03-13

Family

ID=5940509

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017676A Expired JPS5611248B2 (ja) 1975-03-05 1976-02-27

Country Status (14)

Country Link
US (1) US4035664A (ja)
JP (1) JPS5611248B2 (ja)
AT (1) AT373105B (ja)
BE (1) BE838107A (ja)
CA (1) CA1079819A (ja)
CH (1) CH596670A5 (ja)
DE (1) DE2509530C2 (ja)
ES (1) ES445764A1 (ja)
FR (1) FR2303381A1 (ja)
GB (1) GB1497892A (ja)
IL (1) IL49123A (ja)
IT (1) IT1054868B (ja)
NL (1) NL7602226A (ja)
SE (1) SE407728B (ja)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2308206A2 (fr) * 1975-04-14 1976-11-12 Radiotechnique Compelec Circuit logique integre a injecteurs de courant
US4097888A (en) * 1975-10-15 1978-06-27 Signetics Corporation High density collector-up structure
JPS5276887A (en) * 1975-12-22 1977-06-28 Fujitsu Ltd Semiconductor device
GB1580977A (en) * 1976-05-31 1980-12-10 Siemens Ag Schottkytransisitor-logic arrangements
DE2624584A1 (de) * 1976-06-01 1977-12-15 Siemens Ag Anordnung zur versorgung von i hoch 2 l-schaltungen mit verschiedenen stroemen
DE2624547A1 (de) * 1976-06-01 1977-12-15 Siemens Ag Verstaerkerstufe zur stromversorgung von i hoch 2 l-schaltungen
DE2652103C2 (de) * 1976-11-16 1982-10-28 Ibm Deutschland Gmbh, 7000 Stuttgart Integrierte Halbleiteranordnung für ein logisches Schaltungskonzept und Verfahren zu ihrer Herstellung
FR2375722A1 (fr) * 1976-12-21 1978-07-21 Thomson Csf Element logique a faible consommation
SU619066A1 (ru) * 1977-01-06 1979-03-15 Предприятие П/Я В-2892 Интегральный логический элемент
CH631298A5 (de) * 1977-01-10 1982-07-30 Kremlev V J Integrierte logische schaltung.
JPS5429585A (en) * 1977-08-09 1979-03-05 Oki Electric Ind Co Ltd Semiconductor integrated circuit
US4159915A (en) * 1977-10-25 1979-07-03 International Business Machines Corporation Method for fabrication vertical NPN and PNP structures utilizing ion-implantation
JPS5466784A (en) * 1977-11-08 1979-05-29 Toshiba Corp Semiconductor integrated circuit device
DE2750432C2 (de) * 1977-11-11 1985-05-09 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt I↑2↑L-Logik-Schaltungsanordnung
JPS5499580A (en) * 1977-12-27 1979-08-06 Nec Corp Semiconductor integrated circuit device
US4243895A (en) * 1978-01-04 1981-01-06 Nazarian Artashes R Integrated injection circuit
US4348600A (en) * 1978-02-14 1982-09-07 Motorola, Inc. Controlled current source for I2 L to analog interfaces
US4199776A (en) * 1978-08-24 1980-04-22 Rca Corporation Integrated injection logic with floating reinjectors
JPS56103538A (en) * 1980-01-22 1981-08-18 Yamatake Honeywell Co Ltd Logic circuit
JPS57198653A (en) * 1981-06-01 1982-12-06 Nec Ic Microcomput Syst Ltd Semiconductor integrated circuit
GB2153587A (en) * 1984-01-31 1985-08-21 Plessey Co Plc Improvements relating to semiconductor injection logic devices
US4644381A (en) * 1985-04-08 1987-02-17 Siemens Corporate Research & Support, Inc. I2 L heterostructure bipolar transistors and method of making the same
US4794277A (en) * 1986-01-13 1988-12-27 Unitrode Corporation Integrated circuit under-voltage lockout
US4754172A (en) * 1986-12-16 1988-06-28 Texas Instruments Incorporated STL low impedance buffer/driver

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5161260A (ja) * 1974-09-30 1976-05-27 Siemens Ag

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2021824C3 (de) * 1970-05-05 1980-08-14 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithische Halbleiterschaltung
US3816758A (en) * 1971-04-14 1974-06-11 Ibm Digital logic circuit
NL7107040A (ja) * 1971-05-22 1972-11-24
NL7200294A (ja) * 1972-01-08 1973-07-10
DE2212168C2 (de) * 1972-03-14 1982-10-21 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte Halbleiteranordnung
DE2262297C2 (de) * 1972-12-20 1985-11-28 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierbare, logisch verknüpfbare Halbleiterschaltungsanordnung mit I↑2↑L-Aufbau

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5161260A (ja) * 1974-09-30 1976-05-27 Siemens Ag

Also Published As

Publication number Publication date
GB1497892A (en) 1978-01-12
DE2509530C2 (de) 1985-05-23
DE2509530A1 (de) 1976-09-09
IL49123A0 (en) 1976-05-31
BE838107A (fr) 1976-05-14
US4035664A (en) 1977-07-12
ES445764A1 (es) 1977-06-01
CH596670A5 (ja) 1978-03-15
CA1079819A (en) 1980-06-17
AT373105B (de) 1983-12-27
FR2303381A1 (fr) 1976-10-01
SE7602480L (sv) 1976-09-06
IT1054868B (it) 1981-11-30
JPS51110958A (ja) 1976-09-30
IL49123A (en) 1977-11-30
SE407728B (sv) 1979-04-09
FR2303381B1 (ja) 1978-11-10
NL7602226A (nl) 1976-09-07
ATA101476A (de) 1983-04-15

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