JPS56110255A - Pnpn semiconductor switch - Google Patents

Pnpn semiconductor switch

Info

Publication number
JPS56110255A
JPS56110255A JP1147380A JP1147380A JPS56110255A JP S56110255 A JPS56110255 A JP S56110255A JP 1147380 A JP1147380 A JP 1147380A JP 1147380 A JP1147380 A JP 1147380A JP S56110255 A JPS56110255 A JP S56110255A
Authority
JP
Japan
Prior art keywords
type
gate
anode
insulation
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1147380A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0117270B2 (cs
Inventor
Jun Ueda
Haruo Mori
Kazuo Hagimura
Hiroichi Tsukada
Kotaro Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Oki Electric Industry Co Ltd
Original Assignee
Nippon Telegraph and Telephone Corp
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, Oki Electric Industry Co Ltd filed Critical Nippon Telegraph and Telephone Corp
Priority to JP1147380A priority Critical patent/JPS56110255A/ja
Priority to US06/228,935 priority patent/US4489340A/en
Priority to DE3102851A priority patent/DE3102851C2/de
Publication of JPS56110255A publication Critical patent/JPS56110255A/ja
Publication of JPH0117270B2 publication Critical patent/JPH0117270B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/118—Electrodes comprising insulating layers having particular dielectric or electrostatic properties, e.g. having static charges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/251—Lateral thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/133—Thyristors having built-in components the built-in components being capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/138—Thyristors having built-in components the built-in components being FETs

Landscapes

  • Thyristors (AREA)
JP1147380A 1980-02-04 1980-02-04 Pnpn semiconductor switch Granted JPS56110255A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP1147380A JPS56110255A (en) 1980-02-04 1980-02-04 Pnpn semiconductor switch
US06/228,935 US4489340A (en) 1980-02-04 1981-01-28 PNPN Light sensitive semiconductor switch with phototransistor connected across inner base regions
DE3102851A DE3102851C2 (de) 1980-02-04 1981-01-29 PNPN-Halbleiterschalter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1147380A JPS56110255A (en) 1980-02-04 1980-02-04 Pnpn semiconductor switch

Publications (2)

Publication Number Publication Date
JPS56110255A true JPS56110255A (en) 1981-09-01
JPH0117270B2 JPH0117270B2 (cs) 1989-03-29

Family

ID=11779034

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1147380A Granted JPS56110255A (en) 1980-02-04 1980-02-04 Pnpn semiconductor switch

Country Status (1)

Country Link
JP (1) JPS56110255A (cs)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5759673A (en) * 1980-08-11 1982-04-10 Union Carbide Corp Automatic depositing method onto nonmetallic surface

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5759673A (en) * 1980-08-11 1982-04-10 Union Carbide Corp Automatic depositing method onto nonmetallic surface

Also Published As

Publication number Publication date
JPH0117270B2 (cs) 1989-03-29

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