JPS5793571A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5793571A
JPS5793571A JP55170068A JP17006880A JPS5793571A JP S5793571 A JPS5793571 A JP S5793571A JP 55170068 A JP55170068 A JP 55170068A JP 17006880 A JP17006880 A JP 17006880A JP S5793571 A JPS5793571 A JP S5793571A
Authority
JP
Japan
Prior art keywords
electrode
type gate
pellet
lead
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55170068A
Other languages
Japanese (ja)
Inventor
Katsuyuki Nakayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55170068A priority Critical patent/JPS5793571A/en
Publication of JPS5793571A publication Critical patent/JPS5793571A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor
    • H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor the device being a photothyristor

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To form an AC semiconductor switch simplified with a lead frame by electrically connecting a P type gate electrode to an N type gate electrode to pick it up as an auxiliary electrode, thereby reducing the number of steps of connection between the internal electrodes. CONSTITUTION:The cathode of a planar type photosensitive N type gate SCR pellet 33 and the anode electrode of a gate photoSCR pellet are commonly bonded to a common lead 34 to be picked up as a main electrode T2. The cathode electrode of a P type gate SCR pellet 32 and the anode electrode of an N type gate SCR pellet 33 are connected via conductors 20 to lead 36 and are produced as a main electrode T1. The gate electrodes of the pellets 32, 33 are connected via conductors 18 to a lead 35, and are produced as a sole auxiliary electrode G.
JP55170068A 1980-12-02 1980-12-02 Semiconductor device Pending JPS5793571A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55170068A JPS5793571A (en) 1980-12-02 1980-12-02 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55170068A JPS5793571A (en) 1980-12-02 1980-12-02 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5793571A true JPS5793571A (en) 1982-06-10

Family

ID=15898032

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55170068A Pending JPS5793571A (en) 1980-12-02 1980-12-02 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5793571A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5155575A (en) * 1990-01-31 1992-10-13 Siemens Aktiengesellschaft Chip carrier for a microwave semiconductor component

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5155575A (en) * 1990-01-31 1992-10-13 Siemens Aktiengesellschaft Chip carrier for a microwave semiconductor component

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