JPS56110235A - Plasma etching device - Google Patents
Plasma etching deviceInfo
- Publication number
- JPS56110235A JPS56110235A JP1401280A JP1401280A JPS56110235A JP S56110235 A JPS56110235 A JP S56110235A JP 1401280 A JP1401280 A JP 1401280A JP 1401280 A JP1401280 A JP 1401280A JP S56110235 A JPS56110235 A JP S56110235A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- etching
- semiconductor wafer
- wafers
- plasma etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1401280A JPS56110235A (en) | 1980-02-06 | 1980-02-06 | Plasma etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1401280A JPS56110235A (en) | 1980-02-06 | 1980-02-06 | Plasma etching device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56110235A true JPS56110235A (en) | 1981-09-01 |
| JPS6349373B2 JPS6349373B2 (oth) | 1988-10-04 |
Family
ID=11849277
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1401280A Granted JPS56110235A (en) | 1980-02-06 | 1980-02-06 | Plasma etching device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56110235A (oth) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5842235A (ja) * | 1981-09-08 | 1983-03-11 | Toshiba Corp | 半導体乾式エツチング装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5421175A (en) * | 1977-07-18 | 1979-02-17 | Tokyo Ouka Kougiyou Kk | Improvement of plasma reaction processor |
-
1980
- 1980-02-06 JP JP1401280A patent/JPS56110235A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5421175A (en) * | 1977-07-18 | 1979-02-17 | Tokyo Ouka Kougiyou Kk | Improvement of plasma reaction processor |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5842235A (ja) * | 1981-09-08 | 1983-03-11 | Toshiba Corp | 半導体乾式エツチング装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6349373B2 (oth) | 1988-10-04 |
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