JPS5610981A - Photodetector - Google Patents
PhotodetectorInfo
- Publication number
- JPS5610981A JPS5610981A JP8505179A JP8505179A JPS5610981A JP S5610981 A JPS5610981 A JP S5610981A JP 8505179 A JP8505179 A JP 8505179A JP 8505179 A JP8505179 A JP 8505179A JP S5610981 A JPS5610981 A JP S5610981A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- substrate
- photodetector
- molecular formula
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 abstract 3
- 238000010521 absorption reaction Methods 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 239000000654 additive Substances 0.000 abstract 1
- 230000000996 additive effect Effects 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 239000012141 concentrate Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 230000005684 electric field Effects 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8505179A JPS5610981A (en) | 1979-07-06 | 1979-07-06 | Photodetector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8505179A JPS5610981A (en) | 1979-07-06 | 1979-07-06 | Photodetector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5610981A true JPS5610981A (en) | 1981-02-03 |
Family
ID=13847858
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8505179A Pending JPS5610981A (en) | 1979-07-06 | 1979-07-06 | Photodetector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5610981A (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59104178A (ja) * | 1982-12-07 | 1984-06-15 | Kokusai Denshin Denwa Co Ltd <Kdd> | 半導体受光素子 |
-
1979
- 1979-07-06 JP JP8505179A patent/JPS5610981A/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59104178A (ja) * | 1982-12-07 | 1984-06-15 | Kokusai Denshin Denwa Co Ltd <Kdd> | 半導体受光素子 |
| JPH0351115B2 (ja) * | 1982-12-07 | 1991-08-05 | Kokusai Denshin Denwa Co Ltd |
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