JPS56108274A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS56108274A JPS56108274A JP1075680A JP1075680A JPS56108274A JP S56108274 A JPS56108274 A JP S56108274A JP 1075680 A JP1075680 A JP 1075680A JP 1075680 A JP1075680 A JP 1075680A JP S56108274 A JPS56108274 A JP S56108274A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- film
- layers
- electrode metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000010410 layer Substances 0.000 abstract 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000002184 metal Substances 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1066—Gate region of field-effect devices with PN junction gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To obtain a current saturation type SIT or current unsaturation type FET in which the high-speed property and the high-power property are compatible with each other, by employing a notch structure for the gate region of a semiconductor device. CONSTITUTION:On an N<+> type Si substrate 6, an N<-> type drain layer 7, an N type source layer 8 and an N<+> type source ohmic contact layer 9 are epitaxially grown being piled and all coated with an SiO2 film 10, which is formed with bar- or mesh- shaped openings. Then, by using this as a mask, the layers 9 and 8 are removed by etching so that the layer 7 is exposed in the openings, and a P<+> type layer 11 to be a gate is formed by diffusion extending over from the side wall of the layers 9 and 8 remaining under the film 10 to the surface layer portion of the layer 7. Then, the film 10 is replaced with a resist film 13 by which the upper portion of the side surface of the layers 9 and 8 is exposed, and the layer 11 on said portion is removed by etching. Moreover, the film 13 is replaced with an SiO2 film 14, windows are opened and a source electrode metal 15 is attached to the layer 8 and a gate electrode metal 16 to the region 11. Moreover, a drain electrode metal 17 is provided to the lower surface of the substrate 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1075680A JPS56108274A (en) | 1980-01-31 | 1980-01-31 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1075680A JPS56108274A (en) | 1980-01-31 | 1980-01-31 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56108274A true JPS56108274A (en) | 1981-08-27 |
Family
ID=11759159
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1075680A Pending JPS56108274A (en) | 1980-01-31 | 1980-01-31 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56108274A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5219083A (en) * | 1975-08-06 | 1977-01-14 | Nippon Gakki Seizo Kk | Field-effect tansistor |
| JPS5343483A (en) * | 1976-10-01 | 1978-04-19 | Handotai Kenkyu Shinkokai | Semiconductor device |
-
1980
- 1980-01-31 JP JP1075680A patent/JPS56108274A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5219083A (en) * | 1975-08-06 | 1977-01-14 | Nippon Gakki Seizo Kk | Field-effect tansistor |
| JPS5343483A (en) * | 1976-10-01 | 1978-04-19 | Handotai Kenkyu Shinkokai | Semiconductor device |
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