JPS5483777A - Junction type field effect transistor and its manufacture - Google Patents
Junction type field effect transistor and its manufactureInfo
- Publication number
- JPS5483777A JPS5483777A JP15190077A JP15190077A JPS5483777A JP S5483777 A JPS5483777 A JP S5483777A JP 15190077 A JP15190077 A JP 15190077A JP 15190077 A JP15190077 A JP 15190077A JP S5483777 A JPS5483777 A JP S5483777A
- Authority
- JP
- Japan
- Prior art keywords
- sio
- type
- gate
- film
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To improve low-frequency noise characteristics with a current near a Si/SiO2 interface reduced by stacking a Si3N4 film on a SiO2 film at least between gate and source layers.
CONSTITUTION: The n-type layer 23 on p-type si substrate 21 is separated by p- type layer 22, and SiO2 24 and Si3N4 25 are stacked. An opening is made in films 25 and 24 and covered with CVDSiO242. Next, an opening is made selectively, p-type gate layer 28 is formed, and SiO2 29 is applied. Then, an opening is provided selectively to CVD film 42 by a solution mainly composed of HF making use of an etching speed difference, and n-type source and drain 26 and 27 are diffusion- formed. Next, Al electrodes 30 and 31 are fitted. The gate electrode can be obtained from substrate 21 via separate layer 22. In this method, the Si3N4 mask for forming the gate, source and drain by self-matching is formed directly on the SiO2 conductive film, and the electron trap level is formed automatically between Si3 and SiO2, so that a low-noise J-FET can be formed.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15190077A JPS5483777A (en) | 1977-12-16 | 1977-12-16 | Junction type field effect transistor and its manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15190077A JPS5483777A (en) | 1977-12-16 | 1977-12-16 | Junction type field effect transistor and its manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5483777A true JPS5483777A (en) | 1979-07-04 |
Family
ID=15528637
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15190077A Pending JPS5483777A (en) | 1977-12-16 | 1977-12-16 | Junction type field effect transistor and its manufacture |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5483777A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60253278A (en) * | 1984-05-29 | 1985-12-13 | Sony Corp | Manufacture of junction type field-effect type semiconductor device |
-
1977
- 1977-12-16 JP JP15190077A patent/JPS5483777A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60253278A (en) * | 1984-05-29 | 1985-12-13 | Sony Corp | Manufacture of junction type field-effect type semiconductor device |
JPH0713975B2 (en) * | 1984-05-29 | 1995-02-15 | ソニー株式会社 | Manufacturing method of junction type field effect semiconductor device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5529116A (en) | Manufacture of complementary misic | |
JPS56125868A (en) | Thin-film semiconductor device | |
JPS5483777A (en) | Junction type field effect transistor and its manufacture | |
JPS5522879A (en) | Insulation gate type field effect semiconductor device | |
JPS5574174A (en) | Interpolation type insulating gate field effect transistor | |
JPS5556663A (en) | Insulating-gate type field-effect transistor | |
JPS5582469A (en) | Preparation of semiconductor device | |
JPS5583267A (en) | Method of fabricating semiconductor device | |
JPS572519A (en) | Manufacture of semiconductor device | |
JPS5648177A (en) | Junction field effect semiconductor device and its preparation | |
JPS55105332A (en) | Manufacture of semiconductor device | |
JPS55140270A (en) | Insulated gate transistor | |
JPS5492180A (en) | Manufacture of semiconductor device | |
JPS5533051A (en) | Manufacture of semiconductor device | |
JPS56126957A (en) | Manufacture of semiconductor device | |
JPS5715471A (en) | Junction type field effect semiconductor device and manufacture thereof | |
JPS54143076A (en) | Semiconductor device and its manufacture | |
JPS5492070A (en) | Mis field effect transistor and its manufacture | |
JPS5587486A (en) | Mis type semiconductor device | |
JPS5459875A (en) | Semiconductor device | |
JPS54124686A (en) | Mos transistor and its production | |
JPS5642373A (en) | Manufacture of semiconductor device | |
JPS5483776A (en) | Junction type field effect transistor | |
JPS5752169A (en) | Semiconductor device and manufacture thereof | |
JPS5575234A (en) | Semiconductor device |