JPS5483777A - Junction type field effect transistor and its manufacture - Google Patents

Junction type field effect transistor and its manufacture

Info

Publication number
JPS5483777A
JPS5483777A JP15190077A JP15190077A JPS5483777A JP S5483777 A JPS5483777 A JP S5483777A JP 15190077 A JP15190077 A JP 15190077A JP 15190077 A JP15190077 A JP 15190077A JP S5483777 A JPS5483777 A JP S5483777A
Authority
JP
Japan
Prior art keywords
sio
type
gate
film
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15190077A
Other languages
Japanese (ja)
Inventor
Kuni Ogawa
Takeshi Ishihara
Kosei Kajiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP15190077A priority Critical patent/JPS5483777A/en
Publication of JPS5483777A publication Critical patent/JPS5483777A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To improve low-frequency noise characteristics with a current near a Si/SiO2 interface reduced by stacking a Si3N4 film on a SiO2 film at least between gate and source layers.
CONSTITUTION: The n-type layer 23 on p-type si substrate 21 is separated by p- type layer 22, and SiO2 24 and Si3N4 25 are stacked. An opening is made in films 25 and 24 and covered with CVDSiO242. Next, an opening is made selectively, p-type gate layer 28 is formed, and SiO2 29 is applied. Then, an opening is provided selectively to CVD film 42 by a solution mainly composed of HF making use of an etching speed difference, and n-type source and drain 26 and 27 are diffusion- formed. Next, Al electrodes 30 and 31 are fitted. The gate electrode can be obtained from substrate 21 via separate layer 22. In this method, the Si3N4 mask for forming the gate, source and drain by self-matching is formed directly on the SiO2 conductive film, and the electron trap level is formed automatically between Si3 and SiO2, so that a low-noise J-FET can be formed.
COPYRIGHT: (C)1979,JPO&Japio
JP15190077A 1977-12-16 1977-12-16 Junction type field effect transistor and its manufacture Pending JPS5483777A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15190077A JPS5483777A (en) 1977-12-16 1977-12-16 Junction type field effect transistor and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15190077A JPS5483777A (en) 1977-12-16 1977-12-16 Junction type field effect transistor and its manufacture

Publications (1)

Publication Number Publication Date
JPS5483777A true JPS5483777A (en) 1979-07-04

Family

ID=15528637

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15190077A Pending JPS5483777A (en) 1977-12-16 1977-12-16 Junction type field effect transistor and its manufacture

Country Status (1)

Country Link
JP (1) JPS5483777A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60253278A (en) * 1984-05-29 1985-12-13 Sony Corp Manufacture of junction type field-effect type semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60253278A (en) * 1984-05-29 1985-12-13 Sony Corp Manufacture of junction type field-effect type semiconductor device
JPH0713975B2 (en) * 1984-05-29 1995-02-15 ソニー株式会社 Manufacturing method of junction type field effect semiconductor device

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