JPS56105677A - Complementary type high breakdown voltage semiconductor device and manufacture thereof - Google Patents

Complementary type high breakdown voltage semiconductor device and manufacture thereof

Info

Publication number
JPS56105677A
JPS56105677A JP855180A JP855180A JPS56105677A JP S56105677 A JPS56105677 A JP S56105677A JP 855180 A JP855180 A JP 855180A JP 855180 A JP855180 A JP 855180A JP S56105677 A JPS56105677 A JP S56105677A
Authority
JP
Japan
Prior art keywords
layer
type
region
breakdown voltage
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP855180A
Other languages
English (en)
Inventor
Toshihide Kuriyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP855180A priority Critical patent/JPS56105677A/ja
Publication of JPS56105677A publication Critical patent/JPS56105677A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
JP855180A 1980-01-28 1980-01-28 Complementary type high breakdown voltage semiconductor device and manufacture thereof Pending JPS56105677A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP855180A JPS56105677A (en) 1980-01-28 1980-01-28 Complementary type high breakdown voltage semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP855180A JPS56105677A (en) 1980-01-28 1980-01-28 Complementary type high breakdown voltage semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS56105677A true JPS56105677A (en) 1981-08-22

Family

ID=11696260

Family Applications (1)

Application Number Title Priority Date Filing Date
JP855180A Pending JPS56105677A (en) 1980-01-28 1980-01-28 Complementary type high breakdown voltage semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS56105677A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USH1423H (en) * 1992-12-10 1995-04-04 The United States Of America As Represented By The Secretary Of The Navy Method for fabricating a silicon-on-insulator voltage multiplier

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USH1423H (en) * 1992-12-10 1995-04-04 The United States Of America As Represented By The Secretary Of The Navy Method for fabricating a silicon-on-insulator voltage multiplier

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