JPS56104480A - Manufacture of infrared detector - Google Patents

Manufacture of infrared detector

Info

Publication number
JPS56104480A
JPS56104480A JP720580A JP720580A JPS56104480A JP S56104480 A JPS56104480 A JP S56104480A JP 720580 A JP720580 A JP 720580A JP 720580 A JP720580 A JP 720580A JP S56104480 A JPS56104480 A JP S56104480A
Authority
JP
Japan
Prior art keywords
region
infrared
film
infrared rays
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP720580A
Other languages
Japanese (ja)
Inventor
Takaaki Onoe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP720580A priority Critical patent/JPS56104480A/en
Publication of JPS56104480A publication Critical patent/JPS56104480A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
    • H01L31/1035—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIIBV compounds

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To prevent the reflection of the infrared rays of the infrared detector and to obtain high resolution thereof by forming beforehand an electrode forming region and a ray receiving region, bonding a conductor to the electrode forming region and then forming an insulating film and a film which does not pass the infrared rays. CONSTITUTION:After a P type layer 2 is formed on an InSb substrate, the infrared detecting region formed of an infrared ray receiving region and the electrode forming region 4 is formed thereon. After a gold wire 7 is then bonded to the region 4, a mesa top formed of the infrared receiving region and the region 4 is etched to that the carrier produced due to the infrared rays may readily reach the P-N junction. After the insulating film 8 is evaporated, the film 9 for covering the region 4 and the periphery thereof not to pass the infrared rays is covered thereon. Further, an electrode film 10 is formed to complete the infrared detector.
JP720580A 1980-01-23 1980-01-23 Manufacture of infrared detector Pending JPS56104480A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP720580A JPS56104480A (en) 1980-01-23 1980-01-23 Manufacture of infrared detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP720580A JPS56104480A (en) 1980-01-23 1980-01-23 Manufacture of infrared detector

Publications (1)

Publication Number Publication Date
JPS56104480A true JPS56104480A (en) 1981-08-20

Family

ID=11659512

Family Applications (1)

Application Number Title Priority Date Filing Date
JP720580A Pending JPS56104480A (en) 1980-01-23 1980-01-23 Manufacture of infrared detector

Country Status (1)

Country Link
JP (1) JPS56104480A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0286177A (en) * 1988-09-22 1990-03-27 Fujitsu Ltd Photoelectric converter

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0286177A (en) * 1988-09-22 1990-03-27 Fujitsu Ltd Photoelectric converter

Similar Documents

Publication Publication Date Title
JPH027417B2 (en)
JPS56104480A (en) Manufacture of infrared detector
JPS57162372A (en) Semiconductor radiation detector
JPS57128082A (en) Light-receiving element
JPS5521142A (en) Infrared ray detecting element
JPS57107082A (en) Detector for infrared ray
JPS5732683A (en) Semiconductor device
JPS55130149A (en) Semiconductor device
GB1155375A (en) Improvements in or relating to Devices for Detecting Particles
JPS54117689A (en) Semiconductor device
JPS6489527A (en) Schottky diode
JPS5411690A (en) Semiconductor laser unit
JPS5734347A (en) Manufacture of semiconductor device
JPS5263685A (en) Production of semiconductor device
JPS56105670A (en) Semiconductor device
JPS56112752A (en) Semiconductor device
JPS5937448B2 (en) Room temperature infrared detector
EP0363069A3 (en) Radiation detector
JPS5464484A (en) Infrared ray array element
JPS5798824A (en) Infrared ray detector
JPS5252592A (en) Semiconductor light receiving element
JPS6142974A (en) Photocoupled element
JPS62272564A (en) Infrared ray detector
JPS5397367A (en) Semiconductor device and its manufacture
JPS53147463A (en) Production of semiconductor device