JPS6142974A - Photocoupled element - Google Patents
Photocoupled elementInfo
- Publication number
- JPS6142974A JPS6142974A JP59164681A JP16468184A JPS6142974A JP S6142974 A JPS6142974 A JP S6142974A JP 59164681 A JP59164681 A JP 59164681A JP 16468184 A JP16468184 A JP 16468184A JP S6142974 A JPS6142974 A JP S6142974A
- Authority
- JP
- Japan
- Prior art keywords
- photo
- light
- receiving element
- conductive layer
- permeable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000008878 coupling Effects 0.000 claims abstract description 15
- 238000010168 coupling process Methods 0.000 claims abstract description 15
- 238000005859 coupling reaction Methods 0.000 claims abstract description 15
- 239000002131 composite material Substances 0.000 claims abstract description 7
- 230000003287 optical effect Effects 0.000 claims description 8
- 238000009413 insulation Methods 0.000 abstract description 6
- 229910052782 aluminium Inorganic materials 0.000 abstract description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 5
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 3
- 239000012774 insulation material Substances 0.000 abstract 1
- 230000009545 invasion Effects 0.000 abstract 1
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 239000009719 polyimide resin Substances 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229920001342 Bakelite® Polymers 0.000 description 1
- 241000257465 Echinoidea Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000011417 postcuring Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
【発明の詳細な説明】 く技術分野〉 本発明は光結合素子に関する。[Detailed description of the invention] Technical fields> The present invention relates to an optical coupling device.
〈従来技術〉
従来の光結合素子（以下、ホトカプラという）は、第４
図または第５図に示すように、発光ダイオードである発
光素子１０１とホトトランジスタである受光素子１０２
とが互いに対向するとともに、発光素子１０１と受光素
子１０２との間を透光性樹脂１０３またはガラス１０４
などの透光性材で電気的に絶縁する。しかるに、発光素
子１０１と受光素子１０２とが対向しているため、発光
素子１０１と受光素子１０２との間でコンデンサを形成
する。第６図はホトカプラの等価回路を示しており、発
光ダイオード１０１とホトトランジスタ１０２との間に
結合容量Ｃが形成される。<Prior art> Conventional optical coupling devices (hereinafter referred to as photocouplers)
As shown in the figure or FIG. 5, a light emitting element 101 which is a light emitting diode and a light receiving element 102 which is a phototransistor
are opposed to each other, and a light-transmitting resin 103 or glass 104 is placed between the light-emitting element 101 and the light-receiving element 102.
Electrically insulate with transparent material such as However, since the light emitting element 101 and the light receiving element 102 face each other, a capacitor is formed between the light emitting element 101 and the light receiving element 102. FIG. 6 shows an equivalent circuit of a photocoupler, in which a coupling capacitance C is formed between a light emitting diode 101 and a phototransistor 102.
ホトカプラの感度を向上させるためには、発光素子と受
光素子との間の距離をできるだけ小さくする必要がある
。しかし、この距離を小さくすると、発光素子と受光素
子との間の絶縁破壊電圧が低下するため、発光素子と受
光素子、との間の透光性絶縁層に高絶縁性の材料を用い
なければならない、しかるに、高絶縁性材料は誘電率ε
が大であり、素子間路１ｉ１１ｄが小さくなると、次式
により結合容量Ｃはますます大きくなる。In order to improve the sensitivity of a photocoupler, it is necessary to minimize the distance between the light emitting element and the light receiving element. However, if this distance is made smaller, the dielectric breakdown voltage between the light emitting element and the light receiving element will decrease, so a highly insulating material must be used for the transparent insulating layer between the light emitting element and the light receiving element. However, highly insulating materials have a dielectric constant ε
is large and the inter-element path 1i11d becomes small, the coupling capacitance C becomes larger according to the following equation.
ＣｃＣｇＳ／ｄ なお、Ｓは対向面積である。CcCgS/d Note that S is the opposing area.
一般に、ホトカプラは、異なる電位をもつ２つの回路の
間を電気的に絶縁しつつ信号を光によって伝達する用途
に使われる。しかるに、結合容量が大きい場合には、第
７図に示すように、入力回路１０５に進入したノイズは
、ホトカプラの発光ダイオード１０１から結合容量Ｃを
通してホｌ−）ランジスタ１０２に伝達し、ホトトラン
ジスタ１０２のベースに電流Ｉｂが流れ、この電流Ｉｂ
を電流増幅率ｈｆｅ倍した電流Ｉｃ＝ＩｂＸｈｆｅがホ
トトランジスタ１０２のコレクタに流れる。そして、ホ
トトランジスタ１０２のコレクタが接続された出力回路
１０６は、ノイズによる誤動作を起こす。In general, photocouplers are used to electrically insulate two circuits with different potentials while transmitting signals using light. However, when the coupling capacitance is large, as shown in FIG. A current Ib flows through the base of the current Ib
A current Ic=IbXhfe, which is obtained by multiplying the current amplification factor hfe by the current amplification factor hfe, flows to the collector of the phototransistor 102. The output circuit 106 to which the collector of the phototransistor 102 is connected malfunctions due to noise.
この結合容量によるノイズの伝達を防止するためには、
第８図に示すように、ホトカプラの発光ダイオード１０
１とホトトランジスタ１０２との間の結合容ｆＣに静電
遮蔽（シールド）Ｓを施す必要がある。In order to prevent noise transmission due to this coupling capacitance,
As shown in FIG. 8, a photocoupler light emitting diode 10
It is necessary to provide an electrostatic shield S to the coupling capacitance fC between the phototransistor 1 and the phototransistor 102.
〈発明の目的〉
本発明は上記事情に鑑みてなされたものであり、その目
的は、静電遮蔽を行なった高耐ノイズ及び高感度なホト
カプラを提供することである。<Objective of the Invention> The present invention has been made in view of the above circumstances, and its object is to provide a highly noise-resistant and highly sensitive photocoupler that is electrostatically shielded.
〈発明の構成〉
本発明においては、回路間を電気的に絶縁して発光素子
と受光素子とにより信号を光によって伝達するようにし
た光結合素子において、上記受光素子が透光性絶縁層と
透光性導電層とからなる複合層を備えたことを特徴とす
る。<Structure of the Invention> In the present invention, in an optical coupling device in which circuits are electrically insulated and signals are transmitted by light using a light emitting element and a light receiving element, the light receiving element is formed with a light-transmitting insulating layer. It is characterized by comprising a composite layer consisting of a light-transmitting conductive layer.
〈実施例〉 以下本発明の一実施例を説明する。<Example> An embodiment of the present invention will be described below.
第１図はホトカプラの受光素子の構造を示す。FIG. 1 shows the structure of a photocoupler light receiving element.
ホトトランジスタ１はエミッタ領域２．ベース領域３及
びコレクタ領域４からなる。このホトトランジスタ１の
エミッタ領域２の表面にアルミ電極５が形成されるとと
もに、ホトトランジスタ１のベース領域３を覆うように
且つアルミ電極５の一部分を除いて、透光性絶縁層６．
透光性導電層７及び透光性絶縁層８からなる３層の複合
層が形成される。この透光性導電層７により、ベース領
域３の上に静電遮蔽膜が形成される。The phototransistor 1 has an emitter region 2. It consists of a base region 3 and a collector region 4. An aluminum electrode 5 is formed on the surface of the emitter region 2 of the phototransistor 1, and a transparent insulating layer 6.
A three-layer composite layer consisting of a transparent conductive layer 7 and a transparent insulating layer 8 is formed. This transparent conductive layer 7 forms an electrostatic shielding film on the base region 3 .
以下、上述の受光素子の製造方法を説明する。Hereinafter, a method for manufacturing the above-mentioned light receiving element will be explained.
先ず、ホトトランジスタウェハ１に、アルミ電極５を蒸
着及びホトエツチングにより形成する。次に、透光性絶
縁層６を、例えばポリイミド樹脂（住友ベークライト社
ＣＲＣ−６０５０）を厚さ１０μ程度にコーティングし
前硬化を経てホトエツチングにより形成する。さらに、
この透光性絶縁層６を後硬化させた後、透光性導電層７
を、例えば酸化第２錫（米国ピッツバーグガラス社ＮＥ
ＳＡ膜）を透光性絶縁層６の上に蒸着及びホトエツチン
グにより所定のパターン形状に形成する。その後、透光
性絶縁Ｎ８を、透光性絶縁層６と同様の方法で透光性導
電層７の上に厚さ２０μ程度に形成する。First, an aluminum electrode 5 is formed on a phototransistor wafer 1 by vapor deposition and photoetching. Next, the transparent insulating layer 6 is formed by coating, for example, polyimide resin (CRC-6050, Sumitomo Bakelite Co., Ltd.) to a thickness of about 10 μm, pre-curing, and photoetching. moreover,
After post-curing this translucent insulating layer 6, a translucent conductive layer 7
For example, tin oxide (N.E., Pittsburgh Glass Co., USA)
SA film) is formed in a predetermined pattern shape on the transparent insulating layer 6 by vapor deposition and photoetching. Thereafter, a transparent insulating layer N8 is formed to a thickness of about 20 μm on the transparent conductive layer 7 in the same manner as the transparent insulating layer 6.
なお、本実施例では透光性絶縁層６．８にポリイミド樹
脂を用いたが、これ以外の樹脂または無機物例えば酸化
シリコンや窒化シリコンなどを用いてもよい。また、透
光性導電Ｎ７についても、酸化第２錫の他に酸化インジ
ウムなどが利用できる。In this embodiment, polyimide resin is used for the light-transmitting insulating layer 6.8, but other resins or inorganic materials such as silicon oxide and silicon nitride may also be used. Furthermore, for the light-transmitting conductive N7, indium oxide or the like can be used in addition to stannic oxide.
次に、上述の受光素子を備えたホトカプラについて説明
する。Next, a photocoupler including the above-mentioned light receiving element will be explained.
第２図はホトカプラの構造を示す。上述のように構成さ
れた受光素子１０は、リードフレーム（図示せず）など
に接着される。この受光素子１０の透光性絶縁層８の上
に、発光ダイオード１１のＮ領域１２が透明接着剤１３
により接着される。Figure 2 shows the structure of a photocoupler. The light receiving element 10 configured as described above is bonded to a lead frame (not shown) or the like. The N region 12 of the light emitting diode 11 is bonded with a transparent adhesive 13 on the light-transmitting insulating layer 8 of the light-receiving element 10.
It is glued by.
したがって、ホトトランジスタ１と発光ダイオード１１
との間に透光性絶縁層６と透光性絶縁層８を介して透光
性導電層７で構成された静電遮蔽膜が形成される。その
後、受光素子１０のアルミ電極５１発光ダイオード１１
のＰ領域１４及びＮ領域１２に金線１５がそれぞれ接着
される。Therefore, the phototransistor 1 and the light emitting diode 11
An electrostatic shielding film composed of a light-transmitting conductive layer 7 is formed between the light-transmitting insulating layer 6 and the light-transmitting insulating layer 8. After that, the aluminum electrode 51 of the light receiving element 10 and the light emitting diode 11
Gold wires 15 are bonded to the P region 14 and N region 12, respectively.
上述のように、ホトカプラの発光ダイオード１１とホト
トランジスタ１との間に設けられる透光性導電層７をは
さん“だ透光性絶縁Ｎ６，８にポリイミド樹脂を用いる
と、このポリイミド樹脂の絶縁破壊強度が１００Ｖ／μ
以上であるので、光結合素子として充分な絶縁性を備え
る。As mentioned above, when polyimide resin is used for the light-transmitting insulation N6, 8 that sandwiches the light-transmitting conductive layer 7 provided between the light-emitting diode 11 of the photocoupler and the phototransistor 1, the insulation of this polyimide resin Breaking strength is 100V/μ
As described above, it has sufficient insulation properties as an optical coupling element.
第３図はホトカプラの他の例を示す。この場合、受光素
子１０の透光性絶縁層８の上に銀などの蒸着及びホトエ
ツチングにより電極１６を形成し、発光ダイオード１１
のＮ領域１２を導電性接着剤１７によりこの電極１６の
上に接着する。その後、電極１６に金線１５を接着する
。FIG. 3 shows another example of a photocoupler. In this case, an electrode 16 is formed on the light-transmitting insulating layer 8 of the light-receiving element 10 by vapor deposition of silver or the like and photoetching, and the electrode 16 is
The N region 12 of is bonded onto this electrode 16 with a conductive adhesive 17. Thereafter, the gold wire 15 is bonded to the electrode 16.
〈発明の効果〉
以上説明したように、本発明においては、受光素子が透
光性絶縁層と静電遮蔽膜となる透光性導電層からなる複
合層を備えるようにしたから、発光素子と受光素子との
間の結合容量を通してレイズが進入することを防止でき
、素子間の距離を短くするとともに、高絶縁性材料で素
子間の絶縁を行なうことができ、光結合素子の耐ノイズ
性と感度の向上を達成することができる。また、絶縁層
及び静電遮蔽膜がウニハエ程にて形成されるため、量産
性に優れるとともに、特性のバラツキも少ない。<Effects of the Invention> As explained above, in the present invention, since the light-receiving element is provided with a composite layer consisting of a light-transmitting insulating layer and a light-transmitting conductive layer serving as an electrostatic shielding film, it can be combined with a light-emitting element. It is possible to prevent radiation from entering through the coupling capacitance between the photo-receiving element, shorten the distance between the elements, and insulate the elements with a highly insulating material, improving the noise resistance of the optical coupling element. An improvement in sensitivity can be achieved. Furthermore, since the insulating layer and the electrostatic shielding film are formed in a process similar to that of a sea urchin fly, mass productivity is excellent and variations in characteristics are small.
第１図は本発明実施例の受光素子の断面図、第２図は本
発明実施例のホトカブラの断面図、第３図は本発明の他
の実施例のホトカブラの断面図、第４図と第５図はホト
カブラの従来例の断面図、第６図と第７図はホトカブラ
の等価回路の回路図、第゛８図は静電遮蔽を施したホト
カブラの等価回路の回路図である。
１−ホトトランジスタ ６．８−透光性絶縁層７・−・
・・透光性導電層 １０・−・−・受光素子１１−
・発光ダイオードFIG. 1 is a cross-sectional view of a photodetector according to an embodiment of the present invention, FIG. 2 is a cross-sectional view of a photocoupler according to an embodiment of the present invention, FIG. 3 is a cross-sectional view of a photocoupler according to another embodiment of the present invention, and FIG. FIG. 5 is a sectional view of a conventional photocoupler, FIGS. 6 and 7 are circuit diagrams of an equivalent circuit of the photocoupler, and FIG. 8 is a circuit diagram of an equivalent circuit of a photocoupler provided with electrostatic shielding. 1-Phototransistor 6.8-Transparent insulating layer 7...
・・Transparent conductive layer 10・−・−・Light receiving element 11−
・Light-emitting diode
Claims (2)
により信号を光によって伝達するようにした光結合素子
において、上記受光素子が透光性絶縁層と透光性導電層
とからなる複合層を備えたことを特徴とする光結合素子
。(1) In an optical coupling device in which circuits are electrically insulated and signals are transmitted by light using a light emitting element and a light receiving element, the light receiving element is made of a light transmitting insulating layer and a light transmitting conductive layer. An optical coupling device characterized by comprising a composite layer.
特許請求の範囲第１項記載の光結合素子。(2) The optical coupling device according to claim 1, wherein a light emitting device is provided on the composite layer of the light receiving device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59164681A JPS6142974A (en) | 1984-08-06 | 1984-08-06 | Photocoupled element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59164681A JPS6142974A (en) | 1984-08-06 | 1984-08-06 | Photocoupled element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6142974A true JPS6142974A (en) | 1986-03-01 |
Family
ID=15797825
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59164681A Pending JPS6142974A (en) | 1984-08-06 | 1984-08-06 | Photocoupled element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6142974A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0513070U (en) * | 1991-07-29 | 1993-02-19 | シヤープ株式会社 | Optically coupled semiconductor device |
-
1984
- 1984-08-06 JP JP59164681A patent/JPS6142974A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0513070U (en) * | 1991-07-29 | 1993-02-19 | シヤープ株式会社 | Optically coupled semiconductor device |
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