JPS56103477A - Photoelectric conversion element - Google Patents
Photoelectric conversion elementInfo
- Publication number
- JPS56103477A JPS56103477A JP462280A JP462280A JPS56103477A JP S56103477 A JPS56103477 A JP S56103477A JP 462280 A JP462280 A JP 462280A JP 462280 A JP462280 A JP 462280A JP S56103477 A JPS56103477 A JP S56103477A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- noncrystalline
- transparent electrode
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- 229910052804 chromium Inorganic materials 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 2
- 229910052715 tantalum Inorganic materials 0.000 abstract 2
- 239000010409 thin film Substances 0.000 abstract 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 2
- 229910052721 tungsten Inorganic materials 0.000 abstract 2
- 229910052779 Neodymium Inorganic materials 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 229910052959 stibnite Inorganic materials 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- 229910052720 vanadium Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
- H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
- H01J29/456—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions exhibiting no discontinuities, e.g. consisting of uniform layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP462280A JPS56103477A (en) | 1980-01-21 | 1980-01-21 | Photoelectric conversion element |
DE8181300269T DE3170357D1 (en) | 1980-01-21 | 1981-01-21 | Photoelectric conversion element and an image pick-up device |
EP81300269A EP0032847B1 (en) | 1980-01-21 | 1981-01-21 | Photoelectric conversion element and an image pick-up device |
CA000368960A CA1154133A (en) | 1980-01-21 | 1981-01-21 | Photoelectric conversion element |
US06/497,841 US4554478A (en) | 1980-01-21 | 1983-05-25 | Photoelectric conversion element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP462280A JPS56103477A (en) | 1980-01-21 | 1980-01-21 | Photoelectric conversion element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56103477A true JPS56103477A (en) | 1981-08-18 |
JPH0159744B2 JPH0159744B2 (ja) | 1989-12-19 |
Family
ID=11589145
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP462280A Granted JPS56103477A (en) | 1980-01-21 | 1980-01-21 | Photoelectric conversion element |
Country Status (5)
Country | Link |
---|---|
US (1) | US4554478A (ja) |
EP (1) | EP0032847B1 (ja) |
JP (1) | JPS56103477A (ja) |
CA (1) | CA1154133A (ja) |
DE (1) | DE3170357D1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5863164A (ja) * | 1981-10-13 | 1983-04-14 | Fuji Xerox Co Ltd | 光読取り素子 |
JPS5882564A (ja) * | 1981-11-12 | 1983-05-18 | Fuji Xerox Co Ltd | 非晶質シリコン受光素子 |
JPS59229860A (ja) * | 1983-05-23 | 1984-12-24 | Fuji Xerox Co Ltd | 光電変換素子およびその製造方法 |
JPS6035550U (ja) * | 1983-08-18 | 1985-03-11 | 東北リコ−株式会社 | アモルフアスシリコンラインセンサ |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5685876A (en) * | 1979-12-14 | 1981-07-13 | Hitachi Ltd | Photoelectric converter |
EP0053946B1 (en) * | 1980-12-10 | 1988-06-01 | Fuji Xerox Co., Ltd. | Elongate thin-film reader |
JPS59110179A (ja) * | 1982-12-16 | 1984-06-26 | Hitachi Ltd | 半導体装置およびその製造法 |
JPS60113587A (ja) * | 1983-11-24 | 1985-06-20 | Sharp Corp | 2次元画像読取装置 |
US4623601A (en) * | 1985-06-04 | 1986-11-18 | Atlantic Richfield Company | Photoconductive device containing zinc oxide transparent conductive layer |
FR2585183B1 (fr) * | 1985-07-19 | 1987-10-09 | Thomson Csf | Procede de fabrication d'un detecteur d'image lumineuse et detecteur matriciel bidimensionnel obtenu par ce procede |
DE3681862D1 (de) * | 1985-08-23 | 1991-11-14 | Siemens Ag | Verfahren zur herstellung einer hochsperrenden diodenanordnung auf der basis von a-si:h fuer bildsensorzeilen. |
JPH07101598B2 (ja) * | 1986-06-27 | 1995-11-01 | 株式会社日立製作所 | 撮像管 |
US5078803A (en) * | 1989-09-22 | 1992-01-07 | Siemens Solar Industries L.P. | Solar cells incorporating transparent electrodes comprising hazy zinc oxide |
US5973259A (en) * | 1997-05-12 | 1999-10-26 | Borealis Tech Ltd | Method and apparatus for photoelectric generation of electricity |
ITMI20111559A1 (it) * | 2011-08-30 | 2013-03-01 | St Microelectronics Srl | Strato tco di contatto frontale di un pannello solare a film sottile con strato barriera di metallo refrattario e processo di fabbricazione |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5110715A (ja) * | 1974-07-05 | 1976-01-28 | Hitachi Ltd | |
JPS54139342A (en) * | 1978-04-20 | 1979-10-29 | Canon Inc | Information processing unit |
JPS561318A (en) * | 1979-06-18 | 1981-01-09 | Canon Inc | Photoelectric conversion device |
JPS5630373A (en) * | 1979-08-20 | 1981-03-26 | Matsushita Electric Ind Co Ltd | Solid image pickup unit |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3350595A (en) * | 1965-11-15 | 1967-10-31 | Rca Corp | Low dark current photoconductive device |
JPS5240809B2 (ja) * | 1972-04-07 | 1977-10-14 | ||
JPS5757905B2 (ja) * | 1975-02-19 | 1982-12-07 | Matsushita Electric Ind Co Ltd | |
US4167015A (en) * | 1978-04-24 | 1979-09-04 | Rca Corporation | Cermet layer for amorphous silicon solar cells |
JPS54150995A (en) * | 1978-05-19 | 1979-11-27 | Hitachi Ltd | Photo detector |
DE2938260A1 (de) * | 1979-09-21 | 1981-03-26 | Messerschmitt-Bölkow-Blohm GmbH, 8000 München | Halbleiterbauelement fuer die umsetzung von licht in elektrische energie |
JPS5685876A (en) * | 1979-12-14 | 1981-07-13 | Hitachi Ltd | Photoelectric converter |
-
1980
- 1980-01-21 JP JP462280A patent/JPS56103477A/ja active Granted
-
1981
- 1981-01-21 CA CA000368960A patent/CA1154133A/en not_active Expired
- 1981-01-21 EP EP81300269A patent/EP0032847B1/en not_active Expired
- 1981-01-21 DE DE8181300269T patent/DE3170357D1/de not_active Expired
-
1983
- 1983-05-25 US US06/497,841 patent/US4554478A/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5110715A (ja) * | 1974-07-05 | 1976-01-28 | Hitachi Ltd | |
JPS54139342A (en) * | 1978-04-20 | 1979-10-29 | Canon Inc | Information processing unit |
JPS561318A (en) * | 1979-06-18 | 1981-01-09 | Canon Inc | Photoelectric conversion device |
JPS5630373A (en) * | 1979-08-20 | 1981-03-26 | Matsushita Electric Ind Co Ltd | Solid image pickup unit |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5863164A (ja) * | 1981-10-13 | 1983-04-14 | Fuji Xerox Co Ltd | 光読取り素子 |
JPS5882564A (ja) * | 1981-11-12 | 1983-05-18 | Fuji Xerox Co Ltd | 非晶質シリコン受光素子 |
JPS59229860A (ja) * | 1983-05-23 | 1984-12-24 | Fuji Xerox Co Ltd | 光電変換素子およびその製造方法 |
JPS6035550U (ja) * | 1983-08-18 | 1985-03-11 | 東北リコ−株式会社 | アモルフアスシリコンラインセンサ |
JPH021865Y2 (ja) * | 1983-08-18 | 1990-01-17 |
Also Published As
Publication number | Publication date |
---|---|
CA1154133A (en) | 1983-09-20 |
JPH0159744B2 (ja) | 1989-12-19 |
EP0032847A3 (en) | 1982-04-28 |
EP0032847B1 (en) | 1985-05-08 |
DE3170357D1 (en) | 1985-06-13 |
US4554478A (en) | 1985-11-19 |
EP0032847A2 (en) | 1981-07-29 |
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