JPS56103419A - Evaluating method for photoresist - Google Patents

Evaluating method for photoresist

Info

Publication number
JPS56103419A
JPS56103419A JP555880A JP555880A JPS56103419A JP S56103419 A JPS56103419 A JP S56103419A JP 555880 A JP555880 A JP 555880A JP 555880 A JP555880 A JP 555880A JP S56103419 A JPS56103419 A JP S56103419A
Authority
JP
Japan
Prior art keywords
resist
film
photoresist
sio2 film
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP555880A
Other languages
Japanese (ja)
Inventor
Atsushi Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP555880A priority Critical patent/JPS56103419A/en
Publication of JPS56103419A publication Critical patent/JPS56103419A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma

Abstract

PURPOSE:To detect the contamination by incinerating a photoresist on an SiO2 film with O2 plasma, depositing movable ions in a resist on the SiO2 film, providing electrodes on the film, and analyzing the characteristics of the disk. CONSTITUTION:The SiO2 film 12 is provided on an Si substrate 11, the resist 13 is uniformly applied on the film, and the post-baking is performed by an ultraviolet ray. Then, incineration and detaching are performed by O2 plasam, and Al electrodes 14 are evaporated. In this process, the parts of the resist which are not detached by the plasma and the movable ions contained in said part in the deposited state are formed. Said product is compared with a reference specimen which is otherwise prepared under the same conditions. In this case, the capacity, voltage characteristics, and the like are compared with each other. In this constitution, the effects of the resist on the diode are directly measured, and the proper evaluation of the photoresist during the manufacture of IC can be conducted.
JP555880A 1980-01-21 1980-01-21 Evaluating method for photoresist Pending JPS56103419A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP555880A JPS56103419A (en) 1980-01-21 1980-01-21 Evaluating method for photoresist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP555880A JPS56103419A (en) 1980-01-21 1980-01-21 Evaluating method for photoresist

Publications (1)

Publication Number Publication Date
JPS56103419A true JPS56103419A (en) 1981-08-18

Family

ID=11614520

Family Applications (1)

Application Number Title Priority Date Filing Date
JP555880A Pending JPS56103419A (en) 1980-01-21 1980-01-21 Evaluating method for photoresist

Country Status (1)

Country Link
JP (1) JPS56103419A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5310703A (en) * 1987-12-01 1994-05-10 U.S. Philips Corporation Method of manufacturing a semiconductor device, in which photoresist on a silicon oxide layer on a semiconductor substrate is stripped using an oxygen plasma afterglow and a biased substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5310703A (en) * 1987-12-01 1994-05-10 U.S. Philips Corporation Method of manufacturing a semiconductor device, in which photoresist on a silicon oxide layer on a semiconductor substrate is stripped using an oxygen plasma afterglow and a biased substrate

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