JPS56101777A - Mos type semiconductor device - Google Patents
Mos type semiconductor deviceInfo
- Publication number
- JPS56101777A JPS56101777A JP366780A JP366780A JPS56101777A JP S56101777 A JPS56101777 A JP S56101777A JP 366780 A JP366780 A JP 366780A JP 366780 A JP366780 A JP 366780A JP S56101777 A JPS56101777 A JP S56101777A
- Authority
- JP
- Japan
- Prior art keywords
- ionized
- mos type
- vapor
- film
- beryllium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
Landscapes
- Recrystallisation Techniques (AREA)
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP366780A JPS56101777A (en) | 1980-01-18 | 1980-01-18 | Mos type semiconductor device |
DE3100670A DE3100670C2 (de) | 1980-01-18 | 1981-01-12 | Metall-Oxid-Halbleiter-Vorrichtung |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP366780A JPS56101777A (en) | 1980-01-18 | 1980-01-18 | Mos type semiconductor device |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP31333486A Division JPS62247571A (ja) | 1986-12-29 | 1986-12-29 | Mos形半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56101777A true JPS56101777A (en) | 1981-08-14 |
JPS6226594B2 JPS6226594B2 (enrdf_load_stackoverflow) | 1987-06-09 |
Family
ID=11563780
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP366780A Granted JPS56101777A (en) | 1980-01-18 | 1980-01-18 | Mos type semiconductor device |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS56101777A (enrdf_load_stackoverflow) |
DE (1) | DE3100670C2 (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2222721B (en) * | 1988-08-23 | 1993-07-28 | Nobuo Mikoshiba | Cooling semiconductor devices |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1812455C3 (de) * | 1968-12-03 | 1980-03-13 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen einer aus einem Metalloxyd bestehenden isolierenden Schutzschicht an der Oberfläche eines Halbleiterkristalls |
-
1980
- 1980-01-18 JP JP366780A patent/JPS56101777A/ja active Granted
-
1981
- 1981-01-12 DE DE3100670A patent/DE3100670C2/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS6226594B2 (enrdf_load_stackoverflow) | 1987-06-09 |
DE3100670C2 (de) | 1987-02-26 |
DE3100670A1 (de) | 1981-11-19 |
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