JPS56101777A - Mos type semiconductor device - Google Patents

Mos type semiconductor device

Info

Publication number
JPS56101777A
JPS56101777A JP366780A JP366780A JPS56101777A JP S56101777 A JPS56101777 A JP S56101777A JP 366780 A JP366780 A JP 366780A JP 366780 A JP366780 A JP 366780A JP S56101777 A JPS56101777 A JP S56101777A
Authority
JP
Japan
Prior art keywords
ionized
mos type
vapor
film
beryllium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP366780A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6226594B2 (US06649357-20031118-C00005.png
Inventor
Kiyoshi Morimoto
Toshinori Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Futaba Corp
Original Assignee
Futaba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Futaba Corp filed Critical Futaba Corp
Priority to JP366780A priority Critical patent/JPS56101777A/ja
Priority to DE19813100670 priority patent/DE3100670A1/de
Publication of JPS56101777A publication Critical patent/JPS56101777A/ja
Publication of JPS6226594B2 publication Critical patent/JPS6226594B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
  • Formation Of Insulating Films (AREA)
JP366780A 1980-01-18 1980-01-18 Mos type semiconductor device Granted JPS56101777A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP366780A JPS56101777A (en) 1980-01-18 1980-01-18 Mos type semiconductor device
DE19813100670 DE3100670A1 (de) 1980-01-18 1981-01-12 "metall-oxid-halbleiter-vorrichtung"

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP366780A JPS56101777A (en) 1980-01-18 1980-01-18 Mos type semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP31333486A Division JPS62247571A (ja) 1986-12-29 1986-12-29 Ｍｏｓ形半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS56101777A true JPS56101777A (en) 1981-08-14
JPS6226594B2 JPS6226594B2 (US06649357-20031118-C00005.png) 1987-06-09

Family

ID=11563780

Family Applications (1)

Application Number Title Priority Date Filing Date
JP366780A Granted JPS56101777A (en) 1980-01-18 1980-01-18 Mos type semiconductor device

Country Status (2)

Country Link
JP (1) JPS56101777A (US06649357-20031118-C00005.png)
DE (1) DE3100670A1 (US06649357-20031118-C00005.png)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2222721B (en) * 1988-08-23 1993-07-28 Nobuo Mikoshiba Cooling semiconductor devices

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1812455C3 (de) * 1968-12-03 1980-03-13 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen einer aus einem Metalloxyd bestehenden isolierenden Schutzschicht an der Oberfläche eines Halbleiterkristalls

Also Published As

Publication number Publication date
DE3100670A1 (de) 1981-11-19
JPS6226594B2 (US06649357-20031118-C00005.png) 1987-06-09
DE3100670C2 (US06649357-20031118-C00005.png) 1987-02-26

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