JPS5591852A - Hybrid semiconductor device containing elastic surface wave element - Google Patents
Hybrid semiconductor device containing elastic surface wave elementInfo
- Publication number
- JPS5591852A JPS5591852A JP16416378A JP16416378A JPS5591852A JP S5591852 A JPS5591852 A JP S5591852A JP 16416378 A JP16416378 A JP 16416378A JP 16416378 A JP16416378 A JP 16416378A JP S5591852 A JPS5591852 A JP S5591852A
- Authority
- JP
- Japan
- Prior art keywords
- surface wave
- elastic surface
- type electrode
- screen type
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 235000014676 Phragmites communis Nutrition 0.000 abstract 4
- 230000005684 electric field Effects 0.000 abstract 2
- 230000000644 propagated effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N39/00—Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To make a whole device more compact by forming an elastic surface wave element on a semiconductor substrate whereon a semiconductor device has been formed. CONSTITUTION:A signal is applied to a reed screen type electrode 5 provided on an insulating layer 4 while operating a semiconductor integrated circuit within the area 2. If the signal voltage is applied to the reed screen type electrode 5, a protruded electric field is generated on the reed screen type electrode 5, and an elastic surface wave is induced on the rear surface of an elastic surface wave propagation board 8. The elastic surface wave is propagated along the rear surface of the elastic surface wave propagation board 8 and received by a reed screen type electrode 6 via the protruded electric field, then sent to the semiconductor integrated circuit formed in an area 3 so that the signal is processed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16416378A JPS5591852A (en) | 1978-12-30 | 1978-12-30 | Hybrid semiconductor device containing elastic surface wave element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16416378A JPS5591852A (en) | 1978-12-30 | 1978-12-30 | Hybrid semiconductor device containing elastic surface wave element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5591852A true JPS5591852A (en) | 1980-07-11 |
JPS6129147B2 JPS6129147B2 (en) | 1986-07-04 |
Family
ID=15787919
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16416378A Granted JPS5591852A (en) | 1978-12-30 | 1978-12-30 | Hybrid semiconductor device containing elastic surface wave element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5591852A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05110375A (en) * | 1991-10-17 | 1993-04-30 | Mitsubishi Electric Corp | Surface acoustic wave circuit device |
-
1978
- 1978-12-30 JP JP16416378A patent/JPS5591852A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05110375A (en) * | 1991-10-17 | 1993-04-30 | Mitsubishi Electric Corp | Surface acoustic wave circuit device |
Also Published As
Publication number | Publication date |
---|---|
JPS6129147B2 (en) | 1986-07-04 |
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