JPS5585069A - Insulating gate type electrostatic induction transistor - Google Patents

Insulating gate type electrostatic induction transistor

Info

Publication number
JPS5585069A
JPS5585069A JP15901678A JP15901678A JPS5585069A JP S5585069 A JPS5585069 A JP S5585069A JP 15901678 A JP15901678 A JP 15901678A JP 15901678 A JP15901678 A JP 15901678A JP S5585069 A JPS5585069 A JP S5585069A
Authority
JP
Japan
Prior art keywords
gates
gate type
region
electrostatic induction
type electrostatic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15901678A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6244698B2 (enrdf_load_stackoverflow
Inventor
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP15901678A priority Critical patent/JPS5585069A/ja
Publication of JPS5585069A publication Critical patent/JPS5585069A/ja
Publication of JPS6244698B2 publication Critical patent/JPS6244698B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP15901678A 1978-12-21 1978-12-21 Insulating gate type electrostatic induction transistor Granted JPS5585069A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15901678A JPS5585069A (en) 1978-12-21 1978-12-21 Insulating gate type electrostatic induction transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15901678A JPS5585069A (en) 1978-12-21 1978-12-21 Insulating gate type electrostatic induction transistor

Publications (2)

Publication Number Publication Date
JPS5585069A true JPS5585069A (en) 1980-06-26
JPS6244698B2 JPS6244698B2 (enrdf_load_stackoverflow) 1987-09-22

Family

ID=15684399

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15901678A Granted JPS5585069A (en) 1978-12-21 1978-12-21 Insulating gate type electrostatic induction transistor

Country Status (1)

Country Link
JP (1) JPS5585069A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4755859A (en) * 1985-09-30 1988-07-05 Kabushiki Kaisha Toshiba Thin film static induction transistor and method for manufacturing the same
FR2656737A1 (fr) * 1989-12-28 1991-07-05 Nissan Motor Procede de fabrication d'un dispositif semi-conducteur du type a canal entre deux portes isolees notamment de sit.

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4755859A (en) * 1985-09-30 1988-07-05 Kabushiki Kaisha Toshiba Thin film static induction transistor and method for manufacturing the same
FR2656737A1 (fr) * 1989-12-28 1991-07-05 Nissan Motor Procede de fabrication d'un dispositif semi-conducteur du type a canal entre deux portes isolees notamment de sit.
DE4042163A1 (de) * 1989-12-28 1991-09-12 Nissan Motor Verfahren zur herstellung einer halbleitervorrichtung
US5132238A (en) * 1989-12-28 1992-07-21 Nissan Motor Co., Ltd. Method of manufacturing semiconductor device utilizing an accumulation layer
USRE35405E (en) * 1989-12-28 1996-12-17 Nissan Motor Co., Ltd. Method of manufacturing semiconductor device utilizing an accumulation layer

Also Published As

Publication number Publication date
JPS6244698B2 (enrdf_load_stackoverflow) 1987-09-22

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