JPS5585034A - Fabricating method of semiconductor device - Google Patents

Fabricating method of semiconductor device

Info

Publication number
JPS5585034A
JPS5585034A JP15762178A JP15762178A JPS5585034A JP S5585034 A JPS5585034 A JP S5585034A JP 15762178 A JP15762178 A JP 15762178A JP 15762178 A JP15762178 A JP 15762178A JP S5585034 A JPS5585034 A JP S5585034A
Authority
JP
Japan
Prior art keywords
semiconductor device
tank
fluorine
tin
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15762178A
Other languages
Japanese (ja)
Inventor
Osamu Usuda
Hiroyuki Baba
Tsukasa Hattori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15762178A priority Critical patent/JPS5585034A/en
Publication of JPS5585034A publication Critical patent/JPS5585034A/en
Pending legal-status Critical Current

Links

Landscapes

  • Die Bonding (AREA)

Abstract

PURPOSE: To prevent increase of thermal resistance and quality dispersion of a semiconductor device due to thermal fatigue by treating a brazing filler containing tin as main content for bonding a semiconductor device to a substrate in advance by a tin oxide solution remover containing fluoric acid or fluorine.
CONSTITUTION: A solder ribbon 12 containing tin as main content is sequentially supplied by a supply reel 11 to a tank 14 for filling tin oxide solution remover containing fluoric acid or fluorine such as 25%-HF solution or the like, a medicine cleaning tank 15 at front stage tank, and a drain tank 16 of acetone or the like, dried in a drying machine of infrared ray lamp or the like, and taken up on a takeup reel 18. Thus, the oxide film on the solder ribbon surface is removed. The semiconductor is mounted on a heat dissipated substrate using the ribbon to thereby prevent increase of the thermal resistance and guality dispersion of the semiconductor device due to the thermal fatigue.
COPYRIGHT: (C)1980,JPO&Japio
JP15762178A 1978-12-22 1978-12-22 Fabricating method of semiconductor device Pending JPS5585034A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15762178A JPS5585034A (en) 1978-12-22 1978-12-22 Fabricating method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15762178A JPS5585034A (en) 1978-12-22 1978-12-22 Fabricating method of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5585034A true JPS5585034A (en) 1980-06-26

Family

ID=15653724

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15762178A Pending JPS5585034A (en) 1978-12-22 1978-12-22 Fabricating method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5585034A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012099524A (en) * 2010-10-29 2012-05-24 Hitachi High-Tech Instruments Co Ltd Die bonder device, die bonder method, and die bonder quality evaluation equipment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012099524A (en) * 2010-10-29 2012-05-24 Hitachi High-Tech Instruments Co Ltd Die bonder device, die bonder method, and die bonder quality evaluation equipment

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