JPS558093A - Insulating gate type electric field-effectuated semiconductor device and its production method - Google Patents
Insulating gate type electric field-effectuated semiconductor device and its production methodInfo
- Publication number
- JPS558093A JPS558093A JP8172678A JP8172678A JPS558093A JP S558093 A JPS558093 A JP S558093A JP 8172678 A JP8172678 A JP 8172678A JP 8172678 A JP8172678 A JP 8172678A JP S558093 A JPS558093 A JP S558093A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- source
- drain
- sphere
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Non-Volatile Memory (AREA)
Abstract
PURPOSE: To reduce greatly a space of a contact window of a gate electrode, source and drain sphere by conducting a gate electrode production process and the contact window production process of source and drain sphere with a use of a mutual mask.
CONSTITUTION: An oxidation film 3 and a nitrogen film 9 are formed at the main face of a Si base plate 1 on which multi-crystals Si film 4 and oxidation film 6 are established. Then the unnecessary sections are removed to form a gate electrode 4. And a drain sphere 5D and a source sphere 5S are established with the electrode 4 and the oxidation film 6 on it as masks. Then the electrode 4 side is oxidized to form oxidations 10a and 10b. And films 9 and 3 are removed in order with films 6, 10a and 10b as masks to establish contact windows 7a and 7b to which electrode materials are stiched to form drain electrode 8a and source electrode 8b. As a result, source, drain electrode contact windows 7a and 7b and gate electrode 4 can arrange their positions for themselves.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8172678A JPS558093A (en) | 1978-07-04 | 1978-07-04 | Insulating gate type electric field-effectuated semiconductor device and its production method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8172678A JPS558093A (en) | 1978-07-04 | 1978-07-04 | Insulating gate type electric field-effectuated semiconductor device and its production method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS558093A true JPS558093A (en) | 1980-01-21 |
Family
ID=13754409
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8172678A Pending JPS558093A (en) | 1978-07-04 | 1978-07-04 | Insulating gate type electric field-effectuated semiconductor device and its production method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS558093A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5821165A (en) * | 1995-06-09 | 1998-10-13 | Nippon Steel Semiconductor Corporation | Method of fabricating semiconductor devices |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4928278A (en) * | 1972-07-08 | 1974-03-13 |
-
1978
- 1978-07-04 JP JP8172678A patent/JPS558093A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4928278A (en) * | 1972-07-08 | 1974-03-13 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5821165A (en) * | 1995-06-09 | 1998-10-13 | Nippon Steel Semiconductor Corporation | Method of fabricating semiconductor devices |
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