JPS558093A - Insulating gate type electric field-effectuated semiconductor device and its production method - Google Patents

Insulating gate type electric field-effectuated semiconductor device and its production method

Info

Publication number
JPS558093A
JPS558093A JP8172678A JP8172678A JPS558093A JP S558093 A JPS558093 A JP S558093A JP 8172678 A JP8172678 A JP 8172678A JP 8172678 A JP8172678 A JP 8172678A JP S558093 A JPS558093 A JP S558093A
Authority
JP
Japan
Prior art keywords
electrode
source
drain
sphere
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8172678A
Other languages
Japanese (ja)
Inventor
Isao Okura
Masaaki Kimata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8172678A priority Critical patent/JPS558093A/en
Publication of JPS558093A publication Critical patent/JPS558093A/en
Pending legal-status Critical Current

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Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE: To reduce greatly a space of a contact window of a gate electrode, source and drain sphere by conducting a gate electrode production process and the contact window production process of source and drain sphere with a use of a mutual mask.
CONSTITUTION: An oxidation film 3 and a nitrogen film 9 are formed at the main face of a Si base plate 1 on which multi-crystals Si film 4 and oxidation film 6 are established. Then the unnecessary sections are removed to form a gate electrode 4. And a drain sphere 5D and a source sphere 5S are established with the electrode 4 and the oxidation film 6 on it as masks. Then the electrode 4 side is oxidized to form oxidations 10a and 10b. And films 9 and 3 are removed in order with films 6, 10a and 10b as masks to establish contact windows 7a and 7b to which electrode materials are stiched to form drain electrode 8a and source electrode 8b. As a result, source, drain electrode contact windows 7a and 7b and gate electrode 4 can arrange their positions for themselves.
COPYRIGHT: (C)1980,JPO&Japio
JP8172678A 1978-07-04 1978-07-04 Insulating gate type electric field-effectuated semiconductor device and its production method Pending JPS558093A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8172678A JPS558093A (en) 1978-07-04 1978-07-04 Insulating gate type electric field-effectuated semiconductor device and its production method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8172678A JPS558093A (en) 1978-07-04 1978-07-04 Insulating gate type electric field-effectuated semiconductor device and its production method

Publications (1)

Publication Number Publication Date
JPS558093A true JPS558093A (en) 1980-01-21

Family

ID=13754409

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8172678A Pending JPS558093A (en) 1978-07-04 1978-07-04 Insulating gate type electric field-effectuated semiconductor device and its production method

Country Status (1)

Country Link
JP (1) JPS558093A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5821165A (en) * 1995-06-09 1998-10-13 Nippon Steel Semiconductor Corporation Method of fabricating semiconductor devices

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4928278A (en) * 1972-07-08 1974-03-13

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4928278A (en) * 1972-07-08 1974-03-13

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5821165A (en) * 1995-06-09 1998-10-13 Nippon Steel Semiconductor Corporation Method of fabricating semiconductor devices

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