JPS5579447A - Photomask substrate and photomask - Google Patents

Photomask substrate and photomask

Info

Publication number
JPS5579447A
JPS5579447A JP15223178A JP15223178A JPS5579447A JP S5579447 A JPS5579447 A JP S5579447A JP 15223178 A JP15223178 A JP 15223178A JP 15223178 A JP15223178 A JP 15223178A JP S5579447 A JPS5579447 A JP S5579447A
Authority
JP
Japan
Prior art keywords
thin film
thickness
photomask
metal
silicon type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15223178A
Other languages
English (en)
Japanese (ja)
Other versions
JPS649617B2 (en, 2012
Inventor
Akira Kaneki
Tatsuya Ikeuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Original Assignee
Dai Nippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dai Nippon Printing Co Ltd filed Critical Dai Nippon Printing Co Ltd
Priority to JP15223178A priority Critical patent/JPS5579447A/ja
Publication of JPS5579447A publication Critical patent/JPS5579447A/ja
Publication of JPS649617B2 publication Critical patent/JPS649617B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Weting (AREA)
JP15223178A 1978-12-09 1978-12-09 Photomask substrate and photomask Granted JPS5579447A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15223178A JPS5579447A (en) 1978-12-09 1978-12-09 Photomask substrate and photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15223178A JPS5579447A (en) 1978-12-09 1978-12-09 Photomask substrate and photomask

Publications (2)

Publication Number Publication Date
JPS5579447A true JPS5579447A (en) 1980-06-14
JPS649617B2 JPS649617B2 (en, 2012) 1989-02-17

Family

ID=15535948

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15223178A Granted JPS5579447A (en) 1978-12-09 1978-12-09 Photomask substrate and photomask

Country Status (1)

Country Link
JP (1) JPS5579447A (en, 2012)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5764739A (en) * 1980-10-09 1982-04-20 Dainippon Printing Co Ltd Photomask substrate and photomask
JPS58138028A (ja) * 1982-02-12 1983-08-16 Hitachi Ltd フオトマスクの欠陥修正方法
US4440841A (en) * 1981-02-28 1984-04-03 Dai Nippon Insatsu Kabushiki Kaisha Photomask and photomask blank
US4634643A (en) * 1984-04-18 1987-01-06 Nec X-ray mask and method of manufacturing the same
JPH0194347A (ja) * 1987-09-03 1989-04-13 Philips Gloeilampenfab:Nv 放射リソグラフィ用マスクの製造方法
JPH0278216A (ja) * 1988-09-14 1990-03-19 Hitachi Ltd 半導体装置の製造方法
JP2010079110A (ja) * 2008-09-27 2010-04-08 Hoya Corp マスクブランク及び転写用マスクの製造方法
JP2011048353A (ja) * 2009-07-30 2011-03-10 Hoya Corp 多階調フォトマスク、フォトマスクブランク、多階調フォトマスクの製造方法、及びパターン転写方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4853380A (en, 2012) * 1971-11-06 1973-07-26
JPS492626A (en, 2012) * 1972-04-24 1974-01-10
JPS5052073A (en, 2012) * 1973-02-01 1975-05-09
JPS5113577A (en, 2012) * 1974-06-19 1976-02-03 Western Electric Co
JPS53129637A (en) * 1977-04-19 1978-11-11 Nippon Telegr & Teleph Corp <Ntt> Mask for photoetching

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4853380A (en, 2012) * 1971-11-06 1973-07-26
JPS492626A (en, 2012) * 1972-04-24 1974-01-10
JPS5052073A (en, 2012) * 1973-02-01 1975-05-09
JPS5113577A (en, 2012) * 1974-06-19 1976-02-03 Western Electric Co
JPS53129637A (en) * 1977-04-19 1978-11-11 Nippon Telegr & Teleph Corp <Ntt> Mask for photoetching

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5764739A (en) * 1980-10-09 1982-04-20 Dainippon Printing Co Ltd Photomask substrate and photomask
US4556608A (en) * 1980-10-09 1985-12-03 Dai Nippon Insatsu Kabushiki Kaisha Photomask blank and photomask
US4440841A (en) * 1981-02-28 1984-04-03 Dai Nippon Insatsu Kabushiki Kaisha Photomask and photomask blank
JPS58138028A (ja) * 1982-02-12 1983-08-16 Hitachi Ltd フオトマスクの欠陥修正方法
US4634643A (en) * 1984-04-18 1987-01-06 Nec X-ray mask and method of manufacturing the same
JPH0194347A (ja) * 1987-09-03 1989-04-13 Philips Gloeilampenfab:Nv 放射リソグラフィ用マスクの製造方法
JPH0278216A (ja) * 1988-09-14 1990-03-19 Hitachi Ltd 半導体装置の製造方法
JP2010079110A (ja) * 2008-09-27 2010-04-08 Hoya Corp マスクブランク及び転写用マスクの製造方法
JP2011048353A (ja) * 2009-07-30 2011-03-10 Hoya Corp 多階調フォトマスク、フォトマスクブランク、多階調フォトマスクの製造方法、及びパターン転写方法

Also Published As

Publication number Publication date
JPS649617B2 (en, 2012) 1989-02-17

Similar Documents

Publication Publication Date Title
JPS5340281A (en) Photo mask material and manufacturtof it
JPS5579447A (en) Photomask substrate and photomask
JPS5764739A (en) Photomask substrate and photomask
JPS5562771A (en) Integrated circuit device
JPS57157249A (en) Preparation of optical exposure mask
JPS5451832A (en) Photomask material
JPS6437535A (en) Thin film semiconductor element
JPS55138229A (en) Manufacture of dielectric material for insulation- separation substrate
JPS5331983A (en) Production of semiconductor substrates
JPS57207256A (en) Photomask
JPS5331964A (en) Production of semiconductor substrates
JPS54137994A (en) Elastic surface wave element
JPS5669875A (en) Amorphous semiconductor solar cell
JPS54127598A (en) Process for fabricating transparent conductive film
JPS57115554A (en) Photoconductive material
JPS644083A (en) Photovoltaic device
JPS5647001A (en) Optical system
JPS5532276A (en) Semiconductor non-volatile memory unit of 3 layer isolation gate type
JPS5671969A (en) Semiconductor element
JPS57116346A (en) Photoconductive material
JPS5670448A (en) Oxygen sensor
JPS5662382A (en) Hall element
JPS5613733A (en) Forming method for electrode
Golovashkin et al. Investigation of a New Superconducting Element with'Weak' Connection
JPS56138848A (en) Photoelectric surface mask