JPS5576347A - Photo mask - Google Patents
Photo maskInfo
- Publication number
- JPS5576347A JPS5576347A JP14936178A JP14936178A JPS5576347A JP S5576347 A JPS5576347 A JP S5576347A JP 14936178 A JP14936178 A JP 14936178A JP 14936178 A JP14936178 A JP 14936178A JP S5576347 A JPS5576347 A JP S5576347A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- film
- silicon oxide
- mentioned
- photo
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/48—Protective coatings
Abstract
PURPOSE:To enhance the cleaning effect of the photo mask and achieve the increase in the number of use times by covering the surface for forming photo mask patterns with the coating film of silicon oxide and using the mask. CONSTITUTION:A coating film 3 of silicon oxide is provided over the entire surface of a glass substrate 1 formed with mask patterns 2. The above-mentioned film 3 is formed as a transparent film of thicknesses 0.1-0.2mu by coating the liquid-form one normally called ''silica film'' (e.g., O.C.D. made by Tokyo Oka Kogyo K.K.). When stains have deposited on the mask surface through the use of the above- mentioned mask and repetition of photo resist pattern formation on semiconductor device substrates, the photo mask is cleaned with, e.g., a dilute hydrofluoric acid solution to etch away the above-mentioned silicon oxide film and also strip away the stains, thence the coating film of the silicon oxide is again deposited, thus it is used as the mask of a clean pattern surface.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14936178A JPS5576347A (en) | 1978-12-01 | 1978-12-01 | Photo mask |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14936178A JPS5576347A (en) | 1978-12-01 | 1978-12-01 | Photo mask |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5576347A true JPS5576347A (en) | 1980-06-09 |
Family
ID=15473444
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14936178A Pending JPS5576347A (en) | 1978-12-01 | 1978-12-01 | Photo mask |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5576347A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1677342A1 (en) * | 2004-12-31 | 2006-07-05 | Altis Semiconductor | Process for cleaning a semiconductor wafer |
-
1978
- 1978-12-01 JP JP14936178A patent/JPS5576347A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1677342A1 (en) * | 2004-12-31 | 2006-07-05 | Altis Semiconductor | Process for cleaning a semiconductor wafer |
FR2880471A1 (en) * | 2004-12-31 | 2006-07-07 | Altis Semiconductor Snc | METHOD FOR CLEANING A SEMICONDUCTOR |
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