JPS5574181A - Preparing junction type field effect transistor - Google Patents

Preparing junction type field effect transistor

Info

Publication number
JPS5574181A
JPS5574181A JP14835478A JP14835478A JPS5574181A JP S5574181 A JPS5574181 A JP S5574181A JP 14835478 A JP14835478 A JP 14835478A JP 14835478 A JP14835478 A JP 14835478A JP S5574181 A JPS5574181 A JP S5574181A
Authority
JP
Japan
Prior art keywords
layer
area
type
diffused
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14835478A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6117154B2 (enrdf_load_stackoverflow
Inventor
Kosuke Yasuno
Tatsunori Nakajima
Kazutoshi Nagano
Kosei Kajiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP14835478A priority Critical patent/JPS5574181A/ja
Publication of JPS5574181A publication Critical patent/JPS5574181A/ja
Publication of JPS6117154B2 publication Critical patent/JPS6117154B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP14835478A 1978-11-29 1978-11-29 Preparing junction type field effect transistor Granted JPS5574181A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14835478A JPS5574181A (en) 1978-11-29 1978-11-29 Preparing junction type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14835478A JPS5574181A (en) 1978-11-29 1978-11-29 Preparing junction type field effect transistor

Publications (2)

Publication Number Publication Date
JPS5574181A true JPS5574181A (en) 1980-06-04
JPS6117154B2 JPS6117154B2 (enrdf_load_stackoverflow) 1986-05-06

Family

ID=15450875

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14835478A Granted JPS5574181A (en) 1978-11-29 1978-11-29 Preparing junction type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5574181A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09213712A (ja) * 1996-01-30 1997-08-15 Nec Corp 接合型電界効果トランジスタおよびその製造方法
US6362079B1 (en) * 1997-06-06 2002-03-26 Kabushiki Kaisha Tokai Rika Denki Seisakusho Semiconductor device and method of anodization for the semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63131848A (ja) * 1986-11-20 1988-06-03 Takara Co Ltd 玩具用エンジンシリンダの内面処理方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09213712A (ja) * 1996-01-30 1997-08-15 Nec Corp 接合型電界効果トランジスタおよびその製造方法
US6362079B1 (en) * 1997-06-06 2002-03-26 Kabushiki Kaisha Tokai Rika Denki Seisakusho Semiconductor device and method of anodization for the semiconductor device

Also Published As

Publication number Publication date
JPS6117154B2 (enrdf_load_stackoverflow) 1986-05-06

Similar Documents

Publication Publication Date Title
JPS5766674A (en) Semiconductor device
JPS57196573A (en) Manufacture of mos type semiconductor device
JPS5574181A (en) Preparing junction type field effect transistor
JPS54136275A (en) Field effect transistor of isolation gate
JPS5312289A (en) Production of semiconductor device
JPS5588378A (en) Semiconductor device
JPS5619653A (en) Bipolar cmos semiconductor device and manufacture thereof
JPS5723259A (en) Complementary type mos semiconductor device
JPS5456381A (en) Production of semiconductor device
JPS55107229A (en) Method of manufacturing semiconductor device
JPS54139488A (en) Mos semiconductor element and its manufacture
JPS54149477A (en) Production of junction type field effect semiconductor device
JPS57173965A (en) Semiconductor device
JPS568849A (en) Manufacture of semiconductor integrated circuit
JPS5538082A (en) Formation for buried layer of semiconductor device
JPS53137678A (en) Manufacture for mos type semiconductor device
JPS54102980A (en) Mos-type semiconductor device and its manufacture
JPS6477955A (en) Manufacture of semiconductor device
JPS5586152A (en) Manufacture of semiconductor device
JPS5721855A (en) Manufacture of complementary mos semiconductor device
JPS54149478A (en) Junction type field effect semiconductor device
JPS57201080A (en) Semiconductor device
JPS5518072A (en) Mos semiconductor device
JPS5568650A (en) Manufacturing method of semiconductor device
JPS5753958A (ja) Handotaisochi